2N1043 datasheet, PDF - EEWORLD Datasheet

2N1043: DescriptionPower Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 1-Element, PNP, Germanium, Metal, 3 Pin; CategoryDiscrete semiconductor The transistor; File Size391KB，4 Pages; ManufacturerGPD Optoelectronics Corp

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2N1043 Overview

Power Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 1-Element, PNP, Germanium, Metal, 3 Pin

Parameter Name	Attribute value
package instruction	POST/STUD MOUNT, O-MBPM-W3
Reach Compliance Code	unknown
ECCN code	EAR99
Shell connection	COLLECTOR
Maximum collector current (IC)	3 A
Collector-emitter maximum voltage	40 V
Configuration	SINGLE
Minimum DC current gain (hFE)	20
JESD-30 code	O-MBPM-W3
Number of components	1
Number of terminals	3
Maximum operating temperature	100 °C
Package body material	METAL
Package shape	ROUND
Package form	POST/STUD MOUNT
Polarity/channel type	PNP
Maximum power dissipation(Abs)	20 W
Certification status	Not Qualified
Guideline	MIL-19500/137C
surface mount	NO
Terminal form	WIRE
Terminal location	BOTTOM
Transistor component materials	GERMANIUM
Nominal transition frequency (fT)	0.25 MHz
Base Number Matches	1

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