APT50M75LLL datasheet, PDF - EEWORLD Datasheet

APT50M75LLL: DescriptionPower Field-Effect Transistor, 57A I(D), 500V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size162KB，5 Pages; ManufacturerMicrosemi; Websitehttps://www.microsemi.com

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APT50M75LLL Overview

Power Field-Effect Transistor, 57A I(D), 500V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Microsemi
Parts packaging code	TO-264AA
package instruction	TO-264, 3 PIN
Contacts	3
Reach Compliance Code	unknown
Avalanche Energy Efficiency Rating (Eas)	2500 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	500 V
Maximum drain current (ID)	57 A
Maximum drain-source on-resistance	0.075 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-264AA
JESD-30 code	R-PSFM-T3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	228 A
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

	APT50M75LLL	APT50M75B2LL
Description	Power Field-Effect Transistor, 57A I(D), 500V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN	Power Field-Effect Transistor, 57A I(D), 500V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TMAX-3
Is it Rohs certified?	incompatible	incompatible
Maker	Microsemi	Microsemi
package instruction	TO-264, 3 PIN	TMAX-3
Contacts	3	3
Reach Compliance Code	unknown	unknown
Avalanche Energy Efficiency Rating (Eas)	2500 mJ	2500 mJ
Shell connection	DRAIN	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	500 V	500 V
Maximum drain current (ID)	57 A	57 A
Maximum drain-source on-resistance	0.075 Ω	0.075 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSFM-T3	R-PSIP-T3
Number of components	1	1
Number of terminals	3	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	IN-LINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	N-CHANNEL	N-CHANNEL
Maximum pulsed drain current (IDM)	228 A	228 A
Certification status	Not Qualified	Not Qualified
surface mount	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON

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