IRGBC20M-S datasheet, PDF - EEWORLD Datasheet

IRGBC20M-S: DescriptionINSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=8.0A); CategoryDiscrete semiconductor The transistor; File Size88KB，6 Pages; ManufacturerInternational Rectifier （ Infineon ）; Websitehttp://www.irf.com/

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IRGBC20M-S Overview

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=8.0A)

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	International Rectifier （ Infineon ）
Parts packaging code	D2PAK
package instruction	SMALL OUTLINE, R-PSSO-G2
Contacts	4
Reach Compliance Code	unknown
Other features	FAST
Maximum collector current (IC)	13 A
Collector-emitter maximum voltage	600 V
Configuration	SINGLE
Maximum landing time (tf)	510 ns
Gate emitter threshold voltage maximum	5.5 V
Gate-emitter maximum voltage	20 V
JEDEC-95 code	TO-263AB
JESD-30 code	R-PSSO-G2
JESD-609 code	e0
Humidity sensitivity level	1
Number of components	1
Number of terminals	2
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	240
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	60 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	MOTOR CONTROL
Transistor component materials	SILICON
Nominal off time (toff)	370 ns
Nominal on time (ton)	27 ns
Base Number Matches	1

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