IRFR9N20D datasheet, PDF - EEWORLD Datasheet

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IRFR9N20D: DescriptionPower MOSFET(Vdss=200V, Rds(on)max=0.38ohm, Id=9.4A); CategoryDiscrete semiconductor The transistor; File Size131KB，10 Pages; ManufacturerInternational Rectifier （ Infineon ）; Websitehttp://www.irf.com/

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IRFR9N20D Overview

Power MOSFET(Vdss=200V, Rds(on)max=0.38ohm, Id=9.4A)

IRFR9N20D Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	International Rectifier （ Infineon ）
Parts packaging code	TO-252AA
package instruction	SMALL OUTLINE, R-PSSO-G2
Contacts	3
Reach Compliance Code	compli
ECCN code	EAR99
Avalanche Energy Efficiency Rating (Eas)	100 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	200 V
Maximum drain current (Abs) (ID)	9.4 A
Maximum drain current (ID)	9.4 A
Maximum drain-source on-resistance	0.38 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-252AA
JESD-30 code	R-PSSO-G2
JESD-609 code	e0
Humidity sensitivity level	1
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	175 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	245
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	86 W
Maximum pulsed drain current (IDM)	38 A
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal location	SINGLE
Maximum time at peak reflow temperature	30
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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PD - 93919A

SMPS MOSFET

Applications

High frequency DC-DC converters

Benefits

Low Gate-to-Drain Charge to Reduce

Switching Losses

Fully Characterized Capacitance Including

Effective C

OSS

to Simplify Design, (See

App. Note AN1001)

Fully Characterized Avalanche Voltage

and Current

IRFR9N20D

IRFU9N20D

HEXFET

Power MOSFET

DSS

200V

DS(on)

max

0.38Ω

9.4A

D-Pak

IRFR9N20D

I-Pak

IRFU9N20D

Absolute Maximum Ratings

Parameter

@ T

= 25°C

@ T

= 100°C

= 25°C

dv/dt

STG

Continuous Drain Current, V

@ 10V

Continuous Drain Current, V

@ 10V

Pulsed Drain Current

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Peak Diode Recovery dv/dt

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

Max.

9.4

6.7

0.57

± 30

5.0

-55 to + 175

300 (1.6mm from case )

Units

W/°C

V/ns

°C

Typical SMPS Topologies

Telecom 48V input Forward Converter

Notes

through

are on page 10

www.irf.com

6/29/00

IRFR9N20D Related Products

	IRFR9N20D	IRFU9N20D
Description	Power MOSFET(Vdss=200V, Rds(on)max=0.38ohm, Id=9.4A)	Power MOSFET(Vdss=200V, Rds(on)max=0.38ohm, Id=9.4A)
Is it Rohs certified?	incompatible	incompatible
Parts packaging code	TO-252AA	TO-251AA
package instruction	SMALL OUTLINE, R-PSSO-G2	IN-LINE, R-PSIP-T3
Contacts	3	3
Reach Compliance Code	compli	compli
ECCN code	EAR99	EAR99
Avalanche Energy Efficiency Rating (Eas)	100 mJ	100 mJ
Shell connection	DRAIN	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	200 V	200 V
Maximum drain current (Abs) (ID)	9.4 A	9.4 A
Maximum drain current (ID)	9.4 A	9.4 A
Maximum drain-source on-resistance	0.38 Ω	0.38 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-252AA	TO-251AA
JESD-30 code	R-PSSO-G2	R-PSIP-T3
JESD-609 code	e0	e0
Humidity sensitivity level	1	1
Number of components	1	1
Number of terminals	2	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	175 °C	175 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	IN-LINE
Peak Reflow Temperature (Celsius)	245	NOT SPECIFIED
Polarity/channel type	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	86 W	86 W
Maximum pulsed drain current (IDM)	38 A	38 A
Certification status	Not Qualified	Not Qualified
surface mount	YES	NO
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	GULL WING	THROUGH-HOLE
Terminal location	SINGLE	SINGLE
Maximum time at peak reflow temperature	30	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON
Base Number Matches	1	1

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