BAT62...
Silicon Schottky Diode
•
Low barrier diode for detectors up to GHz
frequencies
•
Pb-free (RoHS compliant) package
BAT62
"
,
BAT62-02W
BAT62-03W
!
BAT62-07W
BAT62-02L
BAT62-02LS
BAT62-07L4
4
3
"
,
!
D1
,
,
1
2
D2
1
2
BAT62-09s
$
#
"
,
,
!
ESD
(
E
lectro
s
tatic
d
ischarge) sensitive device, observe handling precaution!
Type
BAT62
BAT62-02L
BAT62-02LS*
BAT62-02W
BAT62-03W
BAT62-07L4
BAT62-07W
BAT62-09s
Package
SOT143
TSLP-2-1
TSSLP-2-1
SCD80
SOD323
TSLP-4-4
SOT343
SOT363
Configuration
anti-parallel pair
single, leadless
single, leadless
single
single
parallel pair, leadless
parallel pair
parallel high, high isolation
L
S
(nH)
2
0.4
0.2
0.6
1.8
0.4
1.8
1.6
Marking
62s
L
U
62
white L
62
62s
69s
* Preliminary Data
1
2011-06-15
BAT62...
Maximum Ratings
at
T
A
= 25°C, unless otherwise specified
Parameter
Diode reverse voltage
Forward current
Total power dissipation
BAT62,
T
S
≤
85 °C
BAT62-02L, -07L4, -03W,
T
S
≤
108 °C
BAT62-02W,
T
S
≤
109 °C
BAT62-07W,
T
S
≤
103 °C
BAT62-09S,
T
S
≤
105 °C
Junction temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point
1)
BAT62
BAT62-02L, -07L4, -03W
BAT62-02W
BAT62-07W
BAT62-09S
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Parameter
DC Characteristics
Reverse current
V
R
= 40 V
I
R
V
F
∆
V
F
Symbol
V
R
I
F
P
tot
Value
40
20
100
100
100
100
100
Unit
V
mA
mW
T
j
T
stg
Symbol
R
thJS
150
-55 ... 150
°C
Value
≤
650
≤
420
≤
410
≤
470
≤
tbd
Unit
K/W
Symbol
min.
-
-
-
Values
typ.
-
0.58
-
max.
10
1
20
Unit
µA
V
mV
Forward voltage
I
F
= 2 mA
Forward voltage matching
2)
I
F
= 2 mA
1
For
2
∆V
calculation of
R
thJA
please refer to Application Note Thermal Resistance
F is the difference between lowest and highest
V
F
in a multiple diode component.
2
2011-06-15
BAT62...
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Parameter
AC Characteristics
Diode capacitance
V
R
= 0 V,
f
= 1 MHz
Differential resistance
V
R
= 0 V,
f
= 10 kHz
R
0
-
225
-
kΩ
C
T
-
0.35
0.6
pF
Symbol
min.
Values
typ.
max.
Unit
3
2011-06-15