2SK579L datasheet, PDF - EEWORLD Datasheet

2SK579L: DescriptionHIGH SPEED POWER SWITCHING; CategoryDiscrete semiconductor The transistor; File Size50KB，1 Pages; ManufacturerHitachi （Renesas ）; Websitehttp://www.renesas.com/eng/

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2SK579L Overview

HIGH SPEED POWER SWITCHING

Parameter Name	Attribute value
package instruction	,
Reach Compliance Code	unknow
Configuration	Single
Maximum drain current (Abs) (ID)	1.5 A
FET technology	METAL-OXIDE SEMICONDUCTOR
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	20 W
surface mount	YES
Base Number Matches	1

	2SK579L	2SK579	2SK579S	2SK580L	2SK580S	2SK580
Description	HIGH SPEED POWER SWITCHING	HIGH SPEED POWER SWITCHING	HIGH SPEED POWER SWITCHING	HIGH SPEED POWER SWITCHING	HIGH SPEED POWER SWITCHING	HIGH SPEED POWER SWITCHING
Reach Compliance Code	unknow	-	unknow	unknow	unknow	-
Configuration	Single	-	Single	Single	Single	-
Maximum drain current (Abs) (ID)	1.5 A	-	1.5 A	1.5 A	1.5 A	-
FET technology	METAL-OXIDE SEMICONDUCTOR	-	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	-
Operating mode	ENHANCEMENT MODE	-	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	-
Maximum operating temperature	150 °C	-	150 °C	150 °C	150 °C	-
Polarity/channel type	N-CHANNEL	-	N-CHANNEL	N-CHANNEL	N-CHANNEL	-
Maximum power dissipation(Abs)	20 W	-	20 W	20 W	20 W	-
surface mount	YES	-	YES	YES	YES	-
Base Number Matches	1	-	1	1	1	-

Shortcut: A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 AA AB AC AD AE AF AG AH AI AJ AK AL AM AN AO AP AQ AR AS AT AU AV AW AX AY AZ B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV BW BX BY BZ C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 CA CB CC CD CE CF CG CH CI CJ CK CL CM CN CO CP CQ CR CS CT CU CV CW CX CY CZ D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 DA DB DC DD DE DF DG DH DI DJ DK DL DM DN DO DP DQ DR DS DT DU DV DW DX DZ

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