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2SK579S

Description
HIGH SPEED POWER SWITCHING
CategoryDiscrete semiconductor    The transistor   
File Size50KB,1 Pages
ManufacturerHitachi (Renesas )
Websitehttp://www.renesas.com/eng/
Download Datasheet Parametric Compare View All

2SK579S Overview

HIGH SPEED POWER SWITCHING

2SK579S Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codeunknow
ConfigurationSingle
Maximum drain current (Abs) (ID)1.5 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)20 W
surface mountYES
Base Number Matches1

2SK579S Related Products

2SK579S 2SK579L 2SK579 2SK580L 2SK580S 2SK580
Description HIGH SPEED POWER SWITCHING HIGH SPEED POWER SWITCHING HIGH SPEED POWER SWITCHING HIGH SPEED POWER SWITCHING HIGH SPEED POWER SWITCHING HIGH SPEED POWER SWITCHING
Reach Compliance Code unknow unknow - unknow unknow -
Configuration Single Single - Single Single -
Maximum drain current (Abs) (ID) 1.5 A 1.5 A - 1.5 A 1.5 A -
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR - METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR -
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE - ENHANCEMENT MODE ENHANCEMENT MODE -
Maximum operating temperature 150 °C 150 °C - 150 °C 150 °C -
Polarity/channel type N-CHANNEL N-CHANNEL - N-CHANNEL N-CHANNEL -
Maximum power dissipation(Abs) 20 W 20 W - 20 W 20 W -
surface mount YES YES - YES YES -
Base Number Matches 1 1 - 1 1 -
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