2SJ365 datasheet, PDF - EEWORLD Datasheet

2SJ365: Description60V SERIES POWER MOSFET; CategoryDiscrete semiconductor The transistor; File Size645KB，1 Pages; ManufacturerSHINDENGEN; Websitehttps://www.shindengen.com

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2SJ365 Overview

60V SERIES POWER MOSFET

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
package instruction	IN-LINE, R-PSIP-T3
Contacts	3
Reach Compliance Code	unknow
ECCN code	EAR99
Configuration	SINGLE
Minimum drain-source breakdown voltage	60 V
Maximum drain current (Abs) (ID)	2 A
Maximum drain current (ID)	2 A
Maximum drain-source on-resistance	0.45 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSIP-T3
JESD-609 code	e0
Humidity sensitivity level	2
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Polarity/channel type	P-CHANNEL
Maximum power consumption environment	20 W
Maximum power dissipation(Abs)	20 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON
Maximum off time (toff)	170 ns
Maximum opening time (tons)	40 ns
Base Number Matches	1

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