IRFS350A datasheet, PDF - EEWORLD Datasheet

IRFS350A: DescriptionPower Field-Effect Transistor, 11.5A I(D), 400V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size209KB，6 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/

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Power Field-Effect Transistor, 11.5A I(D), 400V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN

Parameter Name	Attribute value
Maker	SAMSUNG
Parts packaging code	TO-3PF
package instruction	FLANGE MOUNT, R-PSFM-T3
Contacts	3
Reach Compliance Code	unknown
Avalanche Energy Efficiency Rating (Eas)	605 mJ
Shell connection	ISOLATED
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	400 V
Maximum drain current (Abs) (ID)	12 A
Maximum drain current (ID)	11.5 A
Maximum drain-source on-resistance	0.3 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSFM-T3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	92 W
Maximum pulsed drain current (IDM)	46 A
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Transistor component materials	SILICON
Base Number Matches	1

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