BDP949-E6433 datasheet, PDF - EEWORLD Datasheet

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BDP949-E6433: DescriptionSmall Signal Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon,; CategoryDiscrete semiconductor The transistor; File Size119KB，4 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/

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BDP949-E6433 Overview

Small Signal Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon,

BDP949-E6433 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Infineon
Reach Compliance Code	unknown
ECCN code	EAR99
Shell connection	COLLECTOR
Maximum collector current (IC)	3 A
Collector-emitter maximum voltage	60 V
Configuration	SINGLE
Minimum DC current gain (hFE)	50
JESD-30 code	R-PDSO-G4
JESD-609 code	e0
Number of components	1
Number of terminals	4
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Maximum power dissipation(Abs)	3 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	100 MHz
Base Number Matches	1

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BDP949-E6433 Related Products

	BDP949-E6433	BDP947-E6327	BDP947-E6433	BDP949-E6327
Description	Small Signal Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon,	Small Signal Bipolar Transistor, 3A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon,	Small Signal Bipolar Transistor, 3A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon,	Small Signal Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon,
Is it Rohs certified?	incompatible	conform to	incompatible	conform to
Maker	Infineon	Infineon	Infineon	Infineon
Reach Compliance Code	unknown	compliant	unknown	compliant
ECCN code	EAR99	EAR99	EAR99	EAR99
Shell connection	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR
Maximum collector current (IC)	3 A	3 A	3 A	3 A
Collector-emitter maximum voltage	60 V	45 V	45 V	60 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	50	50	50	50
JESD-30 code	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4
JESD-609 code	e0	e3	e0	e3
Number of components	1	1	1	1
Number of terminals	4	4	4	4
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	NPN	NPN	NPN	NPN
Maximum power dissipation(Abs)	3 W	3 W	3 W	3 W
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES
Terminal surface	Tin/Lead (Sn/Pb)	MATTE TIN	Tin/Lead (Sn/Pb)	MATTE TIN
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL	DUAL
transistor applications	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	100 MHz	100 MHz	100 MHz	100 MHz
Base Number Matches	1	1	1	1

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