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HSS81

Description
0.15 A, SILICON, SIGNAL DIODE, DO-34
CategoryDiscrete semiconductor    diode   
File Size23KB,6 Pages
ManufacturerHitachi (Renesas )
Websitehttp://www.renesas.com/eng/
Download Datasheet Parametric View All

HSS81 Overview

0.15 A, SILICON, SIGNAL DIODE, DO-34

HSS81 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerHitachi (Renesas )
Parts packaging codeDO-34
package instructionO-LALF-W2
Contacts2
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresHIGH RELIABILITY
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1 V
JEDEC-95 codeDO-34
JESD-30 codeO-LALF-W2
Maximum non-repetitive peak forward current1 A
Number of components1
Number of terminals2
Maximum operating temperature200 °C
Maximum output current0.15 A
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Maximum power dissipation0.4 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage200 V
Maximum reverse recovery time0.1 µs
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
Base Number Matches1
HSS81
Silicon Epitaxial Planar Diode for High Voltage Switching
ADE-208-175A (Z)
Rev. 1
Jul. 1995
Features
High reverse voltage. (V
R
= 150V)
Suitable for 5mm pitch high speed automatical insertion.
Small glass package (MHD) enables easy mounting and high reliability.
Ordering Information
Type No.
HSS81
Cathode band
Green
Package Code
MHD
Outline
1
Cathode band
2
1. Cathode
2. Anode
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