M28F101-70XP3 datasheet, PDF - EEWORLD Datasheet

M28F101-70XP3: Description1 Mb 128K x 8, Chip Erase FLASH MEMORY; Categorystorage storage; File Size161KB，23 Pages; ManufacturerSTMicroelectronics; Websitehttp://www.st.com/

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M28F101-70XP3 Overview

1 Mb 128K x 8, Chip Erase FLASH MEMORY

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	STMicroelectronics
Parts packaging code	DIP
package instruction	0.600 INCH, PLASTIC, DIP-32
Contacts	32
Reach Compliance Code	_compli
ECCN code	EAR99
Maximum access time	70 ns
command user interface	YES
Data polling	NO
JESD-30 code	R-PDIP-T32
JESD-609 code	e0
length	41.91 mm
memory density	1048576 bi
Memory IC Type	FLASH
memory width	8
Number of functions	1
Number of terminals	32
word count	131072 words
character code	128000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	125 °C
Minimum operating temperature	-40 °C
organize	128KX8
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	DIP
Encapsulate equivalent code	DIP32,.6
Package shape	RECTANGULAR
Package form	IN-LINE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	5 V
Programming voltage	12 V
Certification status	Not Qualified
Maximum seat height	5.08 mm
Maximum standby current	0.00005 A
Maximum slew rate	0.03 mA
Maximum supply voltage (Vsup)	5.25 V
Minimum supply voltage (Vsup)	4.75 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	AUTOMOTIVE
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
switch bit	NO
type	NOR TYPE
width	15.24 mm

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