IRF3415-017PBF datasheet, PDF - EEWORLD Datasheet

IRF3415-017PBF: Description37000mA, 150V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-220AB; CategoryDiscrete semiconductor The transistor; File Size35KB，1 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/; Environmental Compliance

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IRF3415-017PBF Overview

37000mA, 150V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-220AB

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Infineon
package instruction	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code	compliant
ECCN code	EAR99
Configuration	SINGLE
Minimum drain-source breakdown voltage	150 V
Maximum drain current (ID)	37 A
Maximum drain-source on-resistance	0.042 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSFM-T3
JESD-609 code	e3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	NO
Terminal surface	Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON
Base Number Matches	1

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