JANTX2N5339 datasheet, PDF - EEWORLD Datasheet

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JANTX2N5339: DescriptionSmall Signal Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, HERMETIC SEALED, METAL CAN-3; CategoryDiscrete semiconductor The transistor; File Size198KB，2 Pages; ManufacturerSemicoa; Websitehttp://www.snscorp.com/Semicoa.htm; Environmental Compliance

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JANTX2N5339 Overview

Small Signal Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, HERMETIC SEALED, METAL CAN-3

JANTX2N5339 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Parts packaging code	TO-39
package instruction	CYLINDRICAL, O-MBCY-W3
Contacts	3
Reach Compliance Code	compliant
ECCN code	EAR99
Maximum collector current (IC)	5 A
Collector-emitter maximum voltage	100 V
Configuration	SINGLE
Minimum DC current gain (hFE)	40
JEDEC-95 code	TO-39
JESD-30 code	O-MBCY-W3
Number of components	1
Number of terminals	3
Maximum operating temperature	200 °C
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	NPN
Maximum power dissipation(Abs)	6 W
Certification status	Qualified
Guideline	MIL-19500/560
surface mount	NO
Terminal form	WIRE
Terminal location	BOTTOM
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	30 MHz
Maximum off time (toff)	2200 ns
Maximum opening time (tons)	200 ns
Base Number Matches	1

JANTX2N5339 Related Products

	JANTX2N5339	JANTXV2N5339	JAN2N5339
Description	Small Signal Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, HERMETIC SEALED, METAL CAN-3	Small Signal Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, HERMETIC SEALED, METAL CAN-3	Small Signal Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, HERMETIC SEALED, METAL CAN-3
Is it Rohs certified?	conform to	conform to	conform to
Parts packaging code	TO-39	TO-39	TO-39
package instruction	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3
Contacts	3	3	3
Reach Compliance Code	compliant	compliant	compliant
ECCN code	EAR99	EAR99	EAR99
Maximum collector current (IC)	5 A	5 A	5 A
Collector-emitter maximum voltage	100 V	100 V	100 V
Configuration	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	40	40	40
JEDEC-95 code	TO-39	TO-39	TO-39
JESD-30 code	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3
Number of components	1	1	1
Number of terminals	3	3	3
Maximum operating temperature	200 °C	200 °C	200 °C
Package body material	METAL	METAL	METAL
Package shape	ROUND	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Polarity/channel type	NPN	NPN	NPN
Maximum power dissipation(Abs)	6 W	6 W	6 W
Certification status	Qualified	Qualified	Qualified
Guideline	MIL-19500/560	MIL-19500/560	MIL-19500/560
surface mount	NO	NO	NO
Terminal form	WIRE	WIRE	WIRE
Terminal location	BOTTOM	BOTTOM	BOTTOM
transistor applications	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	30 MHz	30 MHz	30 MHz
Maximum off time (toff)	2200 ns	2200 ns	2200 ns
Maximum opening time (tons)	200 ns	200 ns	200 ns
Base Number Matches	1	1	1
Maker	-	Semicoa	Semicoa
Peak Reflow Temperature (Celsius)	-	NOT SPECIFIED	NOT SPECIFIED
Maximum time at peak reflow temperature	-	NOT SPECIFIED	NOT SPECIFIED

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