Small Signal Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, HERMETIC SEALED, METAL CAN-3
| Parameter Name | Attribute value |
| Is it Rohs certified? | conform to |
| Maker | Semicoa |
| Parts packaging code | TO-39 |
| package instruction | CYLINDRICAL, O-MBCY-W3 |
| Contacts | 3 |
| Reach Compliance Code | compliant |
| ECCN code | EAR99 |
| Maximum collector current (IC) | 5 A |
| Collector-emitter maximum voltage | 100 V |
| Configuration | SINGLE |
| Minimum DC current gain (hFE) | 40 |
| JEDEC-95 code | TO-39 |
| JESD-30 code | O-MBCY-W3 |
| Number of components | 1 |
| Number of terminals | 3 |
| Maximum operating temperature | 200 °C |
| Package body material | METAL |
| Package shape | ROUND |
| Package form | CYLINDRICAL |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Polarity/channel type | NPN |
| Maximum power dissipation(Abs) | 6 W |
| Certification status | Qualified |
| Guideline | MIL-19500/560 |
| surface mount | NO |
| Terminal form | WIRE |
| Terminal location | BOTTOM |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| Nominal transition frequency (fT) | 30 MHz |
| Maximum off time (toff) | 2200 ns |
| Maximum opening time (tons) | 200 ns |
| Base Number Matches | 1 |
| JANTXV2N5339 | JANTX2N5339 | JAN2N5339 | |
|---|---|---|---|
| Description | Small Signal Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, HERMETIC SEALED, METAL CAN-3 | Small Signal Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, HERMETIC SEALED, METAL CAN-3 | Small Signal Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, HERMETIC SEALED, METAL CAN-3 |
| Is it Rohs certified? | conform to | conform to | conform to |
| Parts packaging code | TO-39 | TO-39 | TO-39 |
| package instruction | CYLINDRICAL, O-MBCY-W3 | CYLINDRICAL, O-MBCY-W3 | CYLINDRICAL, O-MBCY-W3 |
| Contacts | 3 | 3 | 3 |
| Reach Compliance Code | compliant | compliant | compliant |
| ECCN code | EAR99 | EAR99 | EAR99 |
| Maximum collector current (IC) | 5 A | 5 A | 5 A |
| Collector-emitter maximum voltage | 100 V | 100 V | 100 V |
| Configuration | SINGLE | SINGLE | SINGLE |
| Minimum DC current gain (hFE) | 40 | 40 | 40 |
| JEDEC-95 code | TO-39 | TO-39 | TO-39 |
| JESD-30 code | O-MBCY-W3 | O-MBCY-W3 | O-MBCY-W3 |
| Number of components | 1 | 1 | 1 |
| Number of terminals | 3 | 3 | 3 |
| Maximum operating temperature | 200 °C | 200 °C | 200 °C |
| Package body material | METAL | METAL | METAL |
| Package shape | ROUND | ROUND | ROUND |
| Package form | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL |
| Polarity/channel type | NPN | NPN | NPN |
| Maximum power dissipation(Abs) | 6 W | 6 W | 6 W |
| Certification status | Qualified | Qualified | Qualified |
| Guideline | MIL-19500/560 | MIL-19500/560 | MIL-19500/560 |
| surface mount | NO | NO | NO |
| Terminal form | WIRE | WIRE | WIRE |
| Terminal location | BOTTOM | BOTTOM | BOTTOM |
| transistor applications | SWITCHING | SWITCHING | SWITCHING |
| Transistor component materials | SILICON | SILICON | SILICON |
| Nominal transition frequency (fT) | 30 MHz | 30 MHz | 30 MHz |
| Maximum off time (toff) | 2200 ns | 2200 ns | 2200 ns |
| Maximum opening time (tons) | 200 ns | 200 ns | 200 ns |
| Base Number Matches | 1 | 1 | 1 |
| Maker | Semicoa | - | Semicoa |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED | - | NOT SPECIFIED |
| Maximum time at peak reflow temperature | NOT SPECIFIED | - | NOT SPECIFIED |
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