DDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, MO-216CAB-1, FBGA-165
Parameter Name | Attribute value |
Is it Rohs certified? | incompatible |
Maker | GSI Technology |
Parts packaging code | BGA |
package instruction | 13 X 15 MM, 1 MM PITCH, MO-216CAB-1, FBGA-165 |
Contacts | 165 |
Reach Compliance Code | not_compliant |
ECCN code | 3A991.B.2.B |
Maximum access time | 0.45 ns |
Other features | PIPELINED ARCHITECTURE |
JESD-30 code | R-PBGA-B165 |
JESD-609 code | e0 |
length | 15 mm |
memory density | 18874368 bit |
Memory IC Type | DDR SRAM |
memory width | 18 |
Number of functions | 1 |
Number of terminals | 165 |
word count | 1048576 words |
character code | 1000000 |
Operating mode | SYNCHRONOUS |
Maximum operating temperature | 85 °C |
Minimum operating temperature | -40 °C |
organize | 1MX18 |
Package body material | PLASTIC/EPOXY |
encapsulated code | LBGA |
Package shape | RECTANGULAR |
Package form | GRID ARRAY, LOW PROFILE |
Parallel/Serial | PARALLEL |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
Certification status | Not Qualified |
Maximum seat height | 1.4 mm |
Maximum supply voltage (Vsup) | 1.95 V |
Minimum supply voltage (Vsup) | 1.7 V |
Nominal supply voltage (Vsup) | 1.8 V |
surface mount | YES |
technology | CMOS |
Temperature level | INDUSTRIAL |
Terminal surface | Tin/Lead (Sn/Pb) |
Terminal form | BALL |
Terminal pitch | 1 mm |
Terminal location | BOTTOM |
Maximum time at peak reflow temperature | NOT SPECIFIED |
width | 13 mm |
Base Number Matches | 1 |
GS8182S18D-250IT | GS8182S18D-250T | GS8182S18GD-250IT | GS8182S18D-250 | GS8182S18D-250I | GS8182S18GD-250I | GS8182S18GD-250T | GS8182S18GD-250 | |
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Description | DDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, MO-216CAB-1, FBGA-165 | DDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, MO-216CAB-1, FBGA-165 | DDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, MO-216CAB-1, LEAD FREE, FBGA-165 | DDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, MO-216CAB-1, FBGA-165 | DDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, MO-216CAB-1, FBGA-165 | DDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, MO-216CAB-1, LEAD FREE, FBGA-165 | DDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, MO-216CAB-1, LEAD FREE, FBGA-165 | DDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, MO-216CAB-1, LEAD FREE, FBGA-165 |
Is it Rohs certified? | incompatible | incompatible | conform to | incompatible | incompatible | conform to | conform to | conform to |
Parts packaging code | BGA | BGA | BGA | BGA | BGA | BGA | BGA | BGA |
package instruction | 13 X 15 MM, 1 MM PITCH, MO-216CAB-1, FBGA-165 | 13 X 15 MM, 1 MM PITCH, MO-216CAB-1, FBGA-165 | LBGA, | 13 X 15 MM, 1 MM PITCH, MO-216CAB-1, FBGA-165 | 13 X 15 MM, 1 MM PITCH, MO-216CAB-1, FBGA-165 | LBGA, | LBGA, | LBGA, |
Contacts | 165 | 165 | 165 | 165 | 165 | 165 | 165 | 165 |
Reach Compliance Code | not_compliant | not_compliant | compliant | not_compliant | not_compliant | compliant | compliant | compliant |
ECCN code | 3A991.B.2.B | 3A991.B.2.B | 3A991.B.2.B | 3A991.B.2.B | 3A991.B.2.B | 3A991.B.2.B | 3A991.B.2.B | 3A991.B.2.B |
Maximum access time | 0.45 ns | 0.45 ns | 0.45 ns | 0.45 ns | 0.45 ns | 0.45 ns | 0.45 ns | 0.45 ns |
Other features | PIPELINED ARCHITECTURE | PIPELINED ARCHITECTURE | PIPELINED ARCHITECTURE | PIPELINED ARCHITECTURE | PIPELINED ARCHITECTURE | PIPELINED ARCHITECTURE | PIPELINED ARCHITECTURE | PIPELINED ARCHITECTURE |
JESD-30 code | R-PBGA-B165 | R-PBGA-B165 | R-PBGA-B165 | R-PBGA-B165 | R-PBGA-B165 | R-PBGA-B165 | R-PBGA-B165 | R-PBGA-B165 |
JESD-609 code | e0 | e0 | e1 | e0 | e0 | e1 | e1 | e1 |
length | 15 mm | 15 mm | 15 mm | 15 mm | 15 mm | 15 mm | 15 mm | 15 mm |
memory density | 18874368 bit | 18874368 bit | 18874368 bit | 18874368 bit | 18874368 bit | 18874368 bit | 18874368 bit | 18874368 bit |
Memory IC Type | DDR SRAM | DDR SRAM | DDR SRAM | DDR SRAM | DDR SRAM | DDR SRAM | DDR SRAM | DDR SRAM |
memory width | 18 | 18 | 18 | 18 | 18 | 18 | 18 | 18 |
Number of functions | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
Number of terminals | 165 | 165 | 165 | 165 | 165 | 165 | 165 | 165 |
word count | 1048576 words | 1048576 words | 1048576 words | 1048576 words | 1048576 words | 1048576 words | 1048576 words | 1048576 words |
character code | 1000000 | 1000000 | 1000000 | 1000000 | 1000000 | 1000000 | 1000000 | 1000000 |
Operating mode | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS |
Maximum operating temperature | 85 °C | 70 °C | 85 °C | 70 °C | 85 °C | 85 °C | 70 °C | 70 °C |
organize | 1MX18 | 1MX18 | 1MX18 | 1MX18 | 1MX18 | 1MX18 | 1MX18 | 1MX18 |
Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
encapsulated code | LBGA | LBGA | LBGA | LBGA | LBGA | LBGA | LBGA | LBGA |
Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
Package form | GRID ARRAY, LOW PROFILE | GRID ARRAY, LOW PROFILE | GRID ARRAY, LOW PROFILE | GRID ARRAY, LOW PROFILE | GRID ARRAY, LOW PROFILE | GRID ARRAY, LOW PROFILE | GRID ARRAY, LOW PROFILE | GRID ARRAY, LOW PROFILE |
Parallel/Serial | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED | NOT SPECIFIED | 260 | NOT SPECIFIED | NOT SPECIFIED | 260 | 260 | 260 |
Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
Maximum seat height | 1.4 mm | 1.4 mm | 1.4 mm | 1.4 mm | 1.4 mm | 1.4 mm | 1.4 mm | 1.4 mm |
Maximum supply voltage (Vsup) | 1.95 V | 1.95 V | 1.95 V | 1.95 V | 1.95 V | 1.95 V | 1.95 V | 1.95 V |
Minimum supply voltage (Vsup) | 1.7 V | 1.7 V | 1.7 V | 1.7 V | 1.7 V | 1.7 V | 1.7 V | 1.7 V |
Nominal supply voltage (Vsup) | 1.8 V | 1.8 V | 1.8 V | 1.8 V | 1.8 V | 1.8 V | 1.8 V | 1.8 V |
surface mount | YES | YES | YES | YES | YES | YES | YES | YES |
technology | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
Temperature level | INDUSTRIAL | COMMERCIAL | INDUSTRIAL | COMMERCIAL | INDUSTRIAL | INDUSTRIAL | COMMERCIAL | COMMERCIAL |
Terminal surface | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Silver/Copper (Sn/Ag/Cu) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Silver/Copper (Sn/Ag/Cu) | Tin/Silver/Copper (Sn/Ag/Cu) | Tin/Silver/Copper (Sn/Ag/Cu) |
Terminal form | BALL | BALL | BALL | BALL | BALL | BALL | BALL | BALL |
Terminal pitch | 1 mm | 1 mm | 1 mm | 1 mm | 1 mm | 1 mm | 1 mm | 1 mm |
Terminal location | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM |
Maximum time at peak reflow temperature | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
width | 13 mm | 13 mm | 13 mm | 13 mm | 13 mm | 13 mm | 13 mm | 13 mm |
Base Number Matches | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
Maker | GSI Technology | GSI Technology | GSI Technology | GSI Technology | GSI Technology | GSI Technology | - | - |