M5M5256CP-10LL datasheet, PDF - EEWORLD Datasheet

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M5M5256CP-10LL: Description262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM　　; Categorystorage storage; File Size454KB，7 Pages; ManufacturerMitsubishi; Websitehttp://www.mitsubishielectric.com/semiconductors/

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M5M5256CP-10LL Overview

262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM　　

M5M5256CP-10LL Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	Mitsubishi
Parts packaging code	DIP
package instruction	DIP, DIP28,.6
Contacts	28
Reach Compliance Code	unknow
ECCN code	EAR99
Maximum access time	100 ns
I/O type	COMMON
JESD-30 code	R-PDIP-T28
JESD-609 code	e0
memory density	262144 bi
Memory IC Type	STANDARD SRAM
memory width	8
Number of functions	1
Number of ports	1
Number of terminals	28
word count	32768 words
character code	32000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	32KX8
Output characteristics	3-STATE
Exportable	YES
Package body material	PLASTIC/EPOXY
encapsulated code	DIP
Encapsulate equivalent code	DIP28,.6
Package shape	RECTANGULAR
Package form	IN-LINE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	5 V
Certification status	Not Qualified
Maximum standby current	0.00001 A
Minimum standby current	2 V
Maximum slew rate	0.05 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED

M5M5256CP-10LL Related Products

	M5M5256CP-10LL	M5M5256CP-85LL
Description	262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM	262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM
Is it lead-free?	Contains lead	Contains lead
Is it Rohs certified?	incompatible	incompatible
Maker	Mitsubishi	Mitsubishi
Parts packaging code	DIP	DIP
package instruction	DIP, DIP28,.6	DIP, DIP28,.6
Contacts	28	28
Reach Compliance Code	unknow	unknow
ECCN code	EAR99	EAR99
Maximum access time	100 ns	85 ns
I/O type	COMMON	COMMON
JESD-30 code	R-PDIP-T28	R-PDIP-T28
JESD-609 code	e0	e0
memory density	262144 bi	262144 bi
Memory IC Type	STANDARD SRAM	STANDARD SRAM
memory width	8	8
Number of functions	1	1
Number of ports	1	1
Number of terminals	28	28
word count	32768 words	32768 words
character code	32000	32000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	70 °C	70 °C
organize	32KX8	32KX8
Output characteristics	3-STATE	3-STATE
Exportable	YES	YES
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	DIP	DIP
Encapsulate equivalent code	DIP28,.6	DIP28,.6
Package shape	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	IN-LINE
Parallel/Serial	PARALLEL	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED
power supply	5 V	5 V
Certification status	Not Qualified	Not Qualified
Maximum standby current	0.00001 A	0.00001 A
Minimum standby current	2 V	2 V
Maximum slew rate	0.05 mA	0.05 mA
Maximum supply voltage (Vsup)	5.5 V	5.5 V
Minimum supply voltage (Vsup)	4.5 V	4.5 V
Nominal supply voltage (Vsup)	5 V	5 V
surface mount	NO	NO
technology	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE	THROUGH-HOLE
Terminal pitch	2.54 mm	2.54 mm
Terminal location	DUAL	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED

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