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M5M5256CP-85LL

Description
262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM  
Categorystorage    storage   
File Size454KB,7 Pages
ManufacturerMitsubishi
Websitehttp://www.mitsubishielectric.com/semiconductors/
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M5M5256CP-85LL Overview

262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM  

M5M5256CP-85LL Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerMitsubishi
Parts packaging codeDIP
package instructionDIP, DIP28,.6
Contacts28
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum access time85 ns
I/O typeCOMMON
JESD-30 codeR-PDIP-T28
JESD-609 codee0
memory density262144 bi
Memory IC TypeSTANDARD SRAM
memory width8
Number of functions1
Number of ports1
Number of terminals28
word count32768 words
character code32000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize32KX8
Output characteristics3-STATE
ExportableYES
Package body materialPLASTIC/EPOXY
encapsulated codeDIP
Encapsulate equivalent codeDIP28,.6
Package shapeRECTANGULAR
Package formIN-LINE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply5 V
Certification statusNot Qualified
Maximum standby current0.00001 A
Minimum standby current2 V
Maximum slew rate0.05 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountNO
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal pitch2.54 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED

M5M5256CP-85LL Related Products

M5M5256CP-85LL M5M5256CP-10LL
Description 262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM   262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM  
Is it lead-free? Contains lead Contains lead
Is it Rohs certified? incompatible incompatible
Maker Mitsubishi Mitsubishi
Parts packaging code DIP DIP
package instruction DIP, DIP28,.6 DIP, DIP28,.6
Contacts 28 28
Reach Compliance Code unknow unknow
ECCN code EAR99 EAR99
Maximum access time 85 ns 100 ns
I/O type COMMON COMMON
JESD-30 code R-PDIP-T28 R-PDIP-T28
JESD-609 code e0 e0
memory density 262144 bi 262144 bi
Memory IC Type STANDARD SRAM STANDARD SRAM
memory width 8 8
Number of functions 1 1
Number of ports 1 1
Number of terminals 28 28
word count 32768 words 32768 words
character code 32000 32000
Operating mode ASYNCHRONOUS ASYNCHRONOUS
Maximum operating temperature 70 °C 70 °C
organize 32KX8 32KX8
Output characteristics 3-STATE 3-STATE
Exportable YES YES
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code DIP DIP
Encapsulate equivalent code DIP28,.6 DIP28,.6
Package shape RECTANGULAR RECTANGULAR
Package form IN-LINE IN-LINE
Parallel/Serial PARALLEL PARALLEL
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
power supply 5 V 5 V
Certification status Not Qualified Not Qualified
Maximum standby current 0.00001 A 0.00001 A
Minimum standby current 2 V 2 V
Maximum slew rate 0.05 mA 0.05 mA
Maximum supply voltage (Vsup) 5.5 V 5.5 V
Minimum supply voltage (Vsup) 4.5 V 4.5 V
Nominal supply voltage (Vsup) 5 V 5 V
surface mount NO NO
technology CMOS CMOS
Temperature level COMMERCIAL COMMERCIAL
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal pitch 2.54 mm 2.54 mm
Terminal location DUAL DUAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED

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