3N189 datasheet, PDF - EEWORLD Datasheet

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3N189: DescriptionSmall Signal Field-Effect Transistor, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-99; CategoryDiscrete semiconductor The transistor; File Size73KB，2 Pages; ManufacturerCalogic; Websitehttp://www.calogic.net/

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3N189 Overview

Small Signal Field-Effect Transistor, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-99

3N189 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Reach Compliance Code	unknown
ECCN code	EAR99
Configuration	SEPARATE, 2 ELEMENTS
Maximum drain current (Abs) (ID)	0.05 A
Maximum drain-source on-resistance	300 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	1 pF
JEDEC-95 code	TO-99
JESD-30 code	O-MBCY-W6
JESD-609 code	e0
Number of components	2
Number of terminals	6
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	200 °C
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	P-CHANNEL
Maximum power dissipation(Abs)	0.3 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	WIRE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON
Base Number Matches	1

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3N189 Related Products

	3N189	3N188	X3N190	X3N191
Description	Small Signal Field-Effect Transistor, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-99	Small Signal Field-Effect Transistor, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-99	Small Signal Field-Effect Transistor, 0.05A I(D), 40V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SORTED, DIE-7	Small Signal Field-Effect Transistor, 0.05A I(D), 40V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SORTED, DIE-7
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible
Reach Compliance Code	unknown	unknown	compliant	compliant
ECCN code	EAR99	EAR99	EAR99	EAR99
Configuration	SEPARATE, 2 ELEMENTS	SEPARATE, 2 ELEMENTS	SEPARATE, 2 ELEMENTS	SEPARATE, 2 ELEMENTS
Maximum drain current (Abs) (ID)	0.05 A	0.05 A	0.05 A	0.05 A
Maximum drain-source on-resistance	300 Ω	300 Ω	300 Ω	300 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	1 pF	1 pF	1 pF	1 pF
JESD-30 code	O-MBCY-W6	O-MBCY-W6	R-XUUC-N7	R-XUUC-N7
Number of components	2	2	2	2
Number of terminals	6	6	7	7
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	200 °C	200 °C	150 °C	150 °C
Package body material	METAL	METAL	UNSPECIFIED	UNSPECIFIED
Package shape	ROUND	ROUND	RECTANGULAR	RECTANGULAR
Package form	CYLINDRICAL	CYLINDRICAL	UNCASED CHIP	UNCASED CHIP
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	P-CHANNEL	P-CHANNEL	P-CHANNEL	P-CHANNEL
Maximum power dissipation(Abs)	0.3 W	0.3 W	0.3 W	0.3 W
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	YES	YES
Terminal form	WIRE	WIRE	NO LEAD	NO LEAD
Terminal location	BOTTOM	BOTTOM	UPPER	UPPER
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Transistor component materials	SILICON	SILICON	SILICON	SILICON
Base Number Matches	1	1	1	-
Maker	-	Calogic	Calogic	Calogic
package instruction	-	CYLINDRICAL, O-MBCY-W6	SORTED, DIE-7	UNCASED CHIP, R-XUUC-N7

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