IS43R16800CC-6TL-TR datasheet, PDF

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IS43R16800CC-6TL-TR: DescriptionDDR DRAM, 8MX16, 0.7ns, CMOS, PDSO66, 0.400 INCH, LEAD FREE, TSOP2-66; Categorystorage storage; File Size702KB，37 Pages; ManufacturerIntegrated Silicon Solution ( ISSI ); Environmental Compliance

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IS43R16800CC-6TL-TR Overview

DDR DRAM, 8MX16, 0.7ns, CMOS, PDSO66, 0.400 INCH, LEAD FREE, TSOP2-66

IS43R16800CC-6TL-TR Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Integrated Silicon Solution ( ISSI )
Parts packaging code	TSOP2
package instruction	TSOP2,
Contacts	66
Reach Compliance Code	unknown
ECCN code	EAR99
access mode	FOUR BANK PAGE BURST
Maximum access time	0.7 ns
Other features	AUTO/SELF REFRESH
JESD-30 code	R-PDSO-G66
JESD-609 code	e3
length	22.22 mm
memory density	134217728 bit
Memory IC Type	DDR DRAM
memory width	16
Humidity sensitivity level	3
Number of functions	1
Number of ports	1
Number of terminals	66
word count	8388608 words
character code	8000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	8MX16
Package body material	PLASTIC/EPOXY
encapsulated code	TSOP2
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE
Peak Reflow Temperature (Celsius)	260
Certification status	Not Qualified
Maximum seat height	1.2 mm
self refresh	YES
Maximum supply voltage (Vsup)	2.7 V
Minimum supply voltage (Vsup)	2.3 V
Nominal supply voltage (Vsup)	2.5 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Matte Tin (Sn)
Terminal form	GULL WING
Terminal pitch	0.65 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	40
width	10.16 mm
Base Number Matches	1

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IS43R16800CC

FEATURES:

8Mx16

128Mb DDR Synchronous DRAM

• V

ddq

= 2.5V+0.2V (-5, -6, -75)

• Double data rate architecture; two data transfers

per clock cycle.

• Bidirectional , data strobe (DQS) is transmitted/

received with data

• Differential clock input (CLK and /CLK)

• DLL aligns DQ and DQS transitions with CLK

transitions edges of DQS

• Commands entered on each positive CLK edge;

• Data and data mask referenced to both edges of

DQS

• 4 bank operation controlled by BA0 , BA1

(Bank Address)

• /CAS latency -2.0 / 2.5 / 3.0 (programmable) ;

Burst length -2 / 4 / 8 (programmable)

Burst type -Sequential / Interleave (program-

mable)

• Auto precharge/ All bank precharge controlled

by A10

• 4096 refresh cycles / 64ms (4 banks concurrent

refresh)

• Auto refresh and Self refresh

• Row address A0-11 / Column address A0-8

• SSTL_2 Interface

• Package:

66-pin TSOP II

• Temperature Range:

Commercial (0

C to +70

Industrial (-40

C to +85

JUNE 2009

DESCRIPTION:

IS43R16800CC is a 4-bank x 2,097,152-word x 16bit

double data rate synchronous DRAM , with SSTL_2

interface. All control and address signals are referenced

to the rising edge of CLK. Input data is registered on

both edges of data strobe, and output data and data

strobe are referenced on both edges of CLK. The device

achieves very high speed clock rate up to 200 MHz.

KEY TIMING PARAMETERS

Parameter

-5

-6

-75

Clk Cycle Time

CAS Latency = 3

7.5

CAS Latency = 2.5

7.5

CAS Latency = 2

7.5

Clk Frequency

CAS Latency = 3

200

167

133

CAS Latency = 2.5 200

167

133

CAS Latency = 2

133

Access Time from Clock

CAS Latency = 3

+0.70 +0.70 +0.75

CAS Latency = 2.5 +0.70 +0.70 +0.75

CAS Latency = 2

+0.75 +0.75 +0.75

Unit

MHz

ADDRESS TABLE

Parameter

Configuration

Bank Address Pins

Autoprecharge Pins

Row Addresses

Column Addresses

Refresh Count

8M x 16

2M x 16 x 4 banks

BA0, BA1

A10/AP

A0 – A11

A0 – A8

4096 / 64ms

notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the

latest version of this device specification before relying on any published information and before placing orders for products.

Integrated Silicon Solution, Inc.

Rev. A

06/01/09

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Is it Rohs certified?	conform to	conform to	conform to	conform to	conform to	conform to
Parts packaging code	TSOP2	TSOP2	TSOP2	TSOP2	TSOP2	TSOP2
package instruction	TSOP2,	TSOP2, TSSOP66,.46	TSOP2, TSSOP66,.46	TSOP2,	TSOP2, TSSOP66,.46	TSOP2, TSSOP66,.46
Contacts	66	66	66	66	66	66
Reach Compliance Code	unknown	compliant	compliant	unknown	compliant	compliant
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
access mode	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST
Maximum access time	0.7 ns	0.7 ns	0.7 ns	0.7 ns	0.7 ns	0.7 ns
Other features	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH
JESD-30 code	R-PDSO-G66	R-PDSO-G66	R-PDSO-G66	R-PDSO-G66	R-PDSO-G66	R-PDSO-G66
JESD-609 code	e3	e3	e3	e3	e3	e3
length	22.22 mm	22.22 mm	22.22 mm	22.22 mm	22.22 mm	22.22 mm
memory density	134217728 bit	134217728 bit	134217728 bit	134217728 bit	134217728 bit	134217728 bit
Memory IC Type	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM
memory width	16	16	16	16	16	16
Humidity sensitivity level	3	3	3	3	3	3
Number of functions	1	1	1	1	1	1
Number of ports	1	1	1	1	1	1
Number of terminals	66	66	66	66	66	66
word count	8388608 words	8388608 words	8388608 words	8388608 words	8388608 words	8388608 words
character code	8000000	8000000	8000000	8000000	8000000	8000000
Operating mode	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
Maximum operating temperature	70 °C	70 °C	85 °C	70 °C	85 °C	70 °C
organize	8MX16	8MX16	8MX16	8MX16	8MX16	8MX16
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	TSOP2	TSOP2	TSOP2	TSOP2	TSOP2	TSOP2
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE
Peak Reflow Temperature (Celsius)	260	260	260	260	260	260
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum seat height	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm
self refresh	YES	YES	YES	YES	YES	YES
Maximum supply voltage (Vsup)	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V
Minimum supply voltage (Vsup)	2.3 V	2.3 V	2.3 V	2.3 V	2.3 V	2.3 V
Nominal supply voltage (Vsup)	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V
surface mount	YES	YES	YES	YES	YES	YES
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	INDUSTRIAL	COMMERCIAL	INDUSTRIAL	COMMERCIAL
Terminal surface	Matte Tin (Sn)	Matte Tin (Sn)	Matte Tin (Sn)	Matte Tin (Sn)	Matte Tin (Sn)	Matte Tin (Sn)
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
Terminal pitch	0.65 mm	0.65 mm	0.65 mm	0.65 mm	0.65 mm	0.65 mm
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	40	40	40	40	40	40
width	10.16 mm	10.16 mm	10.16 mm	10.16 mm	10.16 mm	10.16 mm
Maker	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )	-	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )
Base Number Matches	1	1	1	1	-	-
Maximum clock frequency (fCLK)	-	166 MHz	166 MHz	-	200 MHz	200 MHz
I/O type	-	COMMON	COMMON	-	COMMON	COMMON
interleaved burst length	-	2,4,8	2,4,8	-	2,4,8	2,4,8
Output characteristics	-	3-STATE	3-STATE	-	3-STATE	3-STATE
Encapsulate equivalent code	-	TSSOP66,.46	TSSOP66,.46	-	TSSOP66,.46	TSSOP66,.46
power supply	-	2.5 V	2.5 V	-	2.5 V	2.5 V
refresh cycle	-	4096	4096	-	4096	4096
Continuous burst length	-	2,4,8	2,4,8	-	2,4,8	2,4,8
Maximum standby current	-	0.025 A	0.025 A	-	0.03 A	0.03 A
Maximum slew rate	-	0.25 mA	0.25 mA	-	0.29 mA	0.29 mA

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