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IS43R16800CC-6TLI

Description
DDR DRAM, 8MX16, 0.7ns, CMOS, PDSO66, 0.400 INCH, LEAD FREE, TSOP2-66
Categorystorage    storage   
File Size702KB,37 Pages
ManufacturerIntegrated Silicon Solution ( ISSI )
Environmental Compliance
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IS43R16800CC-6TLI Overview

DDR DRAM, 8MX16, 0.7ns, CMOS, PDSO66, 0.400 INCH, LEAD FREE, TSOP2-66

IS43R16800CC-6TLI Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerIntegrated Silicon Solution ( ISSI )
Parts packaging codeTSOP2
package instructionTSOP2, TSSOP66,.46
Contacts66
Reach Compliance Codecompliant
ECCN codeEAR99
access modeFOUR BANK PAGE BURST
Maximum access time0.7 ns
Other featuresAUTO/SELF REFRESH
Maximum clock frequency (fCLK)166 MHz
I/O typeCOMMON
interleaved burst length2,4,8
JESD-30 codeR-PDSO-G66
JESD-609 codee3
length22.22 mm
memory density134217728 bit
Memory IC TypeDDR DRAM
memory width16
Humidity sensitivity level3
Number of functions1
Number of ports1
Number of terminals66
word count8388608 words
character code8000000
Operating modeSYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize8MX16
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeTSOP2
Encapsulate equivalent codeTSSOP66,.46
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE
Peak Reflow Temperature (Celsius)260
power supply2.5 V
Certification statusNot Qualified
refresh cycle4096
Maximum seat height1.2 mm
self refreshYES
Continuous burst length2,4,8
Maximum standby current0.025 A
Maximum slew rate0.25 mA
Maximum supply voltage (Vsup)2.7 V
Minimum supply voltage (Vsup)2.3 V
Nominal supply voltage (Vsup)2.5 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal pitch0.65 mm
Terminal locationDUAL
Maximum time at peak reflow temperature40
width10.16 mm
Base Number Matches1
IS43R16800CC
FEATURES:
8Mx16
128Mb DDR Synchronous DRAM
• V
dd
=V
ddq
= 2.5V+0.2V (-5, -6, -75)
• Double data rate architecture; two data transfers
per clock cycle.
• Bidirectional , data strobe (DQS) is transmitted/
received with data
• Differential clock input (CLK and /CLK)
• DLL aligns DQ and DQS transitions with CLK
transitions edges of DQS
• Commands entered on each positive CLK edge;
• Data and data mask referenced to both edges of
DQS
• 4 bank operation controlled by BA0 , BA1
(Bank Address)
• /CAS latency -2.0 / 2.5 / 3.0 (programmable) ;
Burst length -2 / 4 / 8 (programmable)
Burst type -Sequential / Interleave (program-
mable)
• Auto precharge/ All bank precharge controlled
by A10
• 4096 refresh cycles / 64ms (4 banks concurrent
refresh)
• Auto refresh and Self refresh
• Row address A0-11 / Column address A0-8
• SSTL_2 Interface
• Package:
66-pin TSOP II
• Temperature Range:
Commercial (0
o
C to +70
o
C)
Industrial (-40
o
C to +85
o
C)
JUNE 2009
DESCRIPTION:
IS43R16800CC is a 4-bank x 2,097,152-word x 16bit
double data rate synchronous DRAM , with SSTL_2
interface. All control and address signals are referenced
to the rising edge of CLK. Input data is registered on
both edges of data strobe, and output data and data
strobe are referenced on both edges of CLK. The device
achieves very high speed clock rate up to 200 MHz.
KEY TIMING PARAMETERS
Parameter
-5
-6
-75
Clk Cycle Time
CAS Latency = 3
5
6
7.5
CAS Latency = 2.5
5
6
7.5
CAS Latency = 2
7.5
7.5
7.5
Clk Frequency
CAS Latency = 3
200
167
133
CAS Latency = 2.5 200
167
133
CAS Latency = 2
133
133
133
Access Time from Clock
CAS Latency = 3
+0.70 +0.70 +0.75
CAS Latency = 2.5 +0.70 +0.70 +0.75
CAS Latency = 2
+0.75 +0.75 +0.75
Unit
ns
ns
ns
MHz
MHz
MHz
ns
ns
ns
ADDRESS TABLE
Parameter
Configuration
Bank Address Pins
Autoprecharge Pins
Row Addresses
Column Addresses
Refresh Count
8M x 16
2M x 16 x 4 banks
BA0, BA1
A10/AP
A0 – A11
A0 – A8
4096 / 64ms
Copyright © 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without
notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the
latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc.
Rev. A
06/01/09
1

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Description DDR DRAM, 8MX16, 0.7ns, CMOS, PDSO66, 0.400 INCH, LEAD FREE, TSOP2-66 DDR DRAM, 8MX16, 0.7ns, CMOS, PDSO66, 0.400 INCH, LEAD FREE, TSOP2-66 DDR DRAM, 8MX16, 0.7ns, CMOS, PDSO66, 0.400 INCH, LEAD FREE, TSOP2-66 DDR DRAM, 8MX16, 0.7ns, CMOS, PDSO66, 0.400 INCH, LEAD FREE, TSOP2-66 DDR DRAM, 8MX16, 0.7ns, CMOS, PDSO66, 0.400 INCH, LEAD FREE, TSOP2-66 DDR DRAM, 8MX16, 0.7ns, CMOS, PDSO66, 0.400 INCH, LEAD FREE, TSOP2-66
Is it Rohs certified? conform to conform to conform to conform to conform to conform to
Parts packaging code TSOP2 TSOP2 TSOP2 TSOP2 TSOP2 TSOP2
package instruction TSOP2, TSSOP66,.46 TSOP2, TSSOP66,.46 TSOP2, TSOP2, TSOP2, TSSOP66,.46 TSOP2, TSSOP66,.46
Contacts 66 66 66 66 66 66
Reach Compliance Code compliant compliant unknown unknown compliant compliant
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
access mode FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST
Maximum access time 0.7 ns 0.7 ns 0.7 ns 0.7 ns 0.7 ns 0.7 ns
Other features AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH
JESD-30 code R-PDSO-G66 R-PDSO-G66 R-PDSO-G66 R-PDSO-G66 R-PDSO-G66 R-PDSO-G66
JESD-609 code e3 e3 e3 e3 e3 e3
length 22.22 mm 22.22 mm 22.22 mm 22.22 mm 22.22 mm 22.22 mm
memory density 134217728 bit 134217728 bit 134217728 bit 134217728 bit 134217728 bit 134217728 bit
Memory IC Type DDR DRAM DDR DRAM DDR DRAM DDR DRAM DDR DRAM DDR DRAM
memory width 16 16 16 16 16 16
Humidity sensitivity level 3 3 3 3 3 3
Number of functions 1 1 1 1 1 1
Number of ports 1 1 1 1 1 1
Number of terminals 66 66 66 66 66 66
word count 8388608 words 8388608 words 8388608 words 8388608 words 8388608 words 8388608 words
character code 8000000 8000000 8000000 8000000 8000000 8000000
Operating mode SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
Maximum operating temperature 85 °C 70 °C 70 °C 70 °C 85 °C 70 °C
organize 8MX16 8MX16 8MX16 8MX16 8MX16 8MX16
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code TSOP2 TSOP2 TSOP2 TSOP2 TSOP2 TSOP2
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE
Peak Reflow Temperature (Celsius) 260 260 260 260 260 260
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Maximum seat height 1.2 mm 1.2 mm 1.2 mm 1.2 mm 1.2 mm 1.2 mm
self refresh YES YES YES YES YES YES
Maximum supply voltage (Vsup) 2.7 V 2.7 V 2.7 V 2.7 V 2.7 V 2.7 V
Minimum supply voltage (Vsup) 2.3 V 2.3 V 2.3 V 2.3 V 2.3 V 2.3 V
Nominal supply voltage (Vsup) 2.5 V 2.5 V 2.5 V 2.5 V 2.5 V 2.5 V
surface mount YES YES YES YES YES YES
technology CMOS CMOS CMOS CMOS CMOS CMOS
Temperature level INDUSTRIAL COMMERCIAL COMMERCIAL COMMERCIAL INDUSTRIAL COMMERCIAL
Terminal surface Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn)
Terminal form GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING
Terminal pitch 0.65 mm 0.65 mm 0.65 mm 0.65 mm 0.65 mm 0.65 mm
Terminal location DUAL DUAL DUAL DUAL DUAL DUAL
Maximum time at peak reflow temperature 40 40 40 40 40 40
width 10.16 mm 10.16 mm 10.16 mm 10.16 mm 10.16 mm 10.16 mm
Maker Integrated Silicon Solution ( ISSI ) Integrated Silicon Solution ( ISSI ) Integrated Silicon Solution ( ISSI ) - Integrated Silicon Solution ( ISSI ) Integrated Silicon Solution ( ISSI )
Maximum clock frequency (fCLK) 166 MHz 166 MHz - - 200 MHz 200 MHz
I/O type COMMON COMMON - - COMMON COMMON
interleaved burst length 2,4,8 2,4,8 - - 2,4,8 2,4,8
Output characteristics 3-STATE 3-STATE - - 3-STATE 3-STATE
Encapsulate equivalent code TSSOP66,.46 TSSOP66,.46 - - TSSOP66,.46 TSSOP66,.46
power supply 2.5 V 2.5 V - - 2.5 V 2.5 V
refresh cycle 4096 4096 - - 4096 4096
Continuous burst length 2,4,8 2,4,8 - - 2,4,8 2,4,8
Maximum standby current 0.025 A 0.025 A - - 0.03 A 0.03 A
Maximum slew rate 0.25 mA 0.25 mA - - 0.29 mA 0.29 mA
Base Number Matches 1 1 1 1 - -

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