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HGTP10N50C1

Description
10 A, 500 V, N-CHANNEL IGBT, TO-220AB
Categorysemiconductor    Discrete semiconductor   
File Size41KB,7 Pages
ManufacturerIntersil ( Renesas )
Websitehttp://www.intersil.com/cda/home/
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HGTP10N50C1 Overview

10 A, 500 V, N-CHANNEL IGBT, TO-220AB

HGTP10N40C1, 40E1, 50C1, 50E1,
HGTH12N40C1, 40E1, 50C1, 50E1
April 1995
10A, 12A,
400V and 500V N-Channel IGBTs
Packages
HGTH-TYPES JEDEC TO-218AC
EMITTER
COLLECTOR
COLLECTOR
(FLANGE)
GATE
Features
• 10A and 12A, 400V and 500V
• V
CE(ON)
: 2.5V Max.
• T
FI
: 1µs, 0.5µs
• Low On-State Voltage
• Fast Switching Speeds
• High Input Impedance
• No Anti-Parallel Diode
Applications
HGTP-TYPES JEDEC TO-220AB
• Power Supplies
• Motor Drives
• Protection Circuits
COLLECTOR
(FLANGE)
EMITTER
COLLECTOR
GATE
Description
The HGTH12N40C1, HGTH12N40E1, HGTH12N50C1, HGTH12N50E1,
HGTP10N40C1, HGTP10N40E1, HGTP10N50C1 and HGTP10N50E1
are n-channel enhancement-mode insulated gate bipolar transistors
(IGBTs) designed for high-voltage, low on-dissipation applications such as
switching regulators and motor drivers. These types can be operated
directly from low-power integrated circuits.
PACKAGING AVAILABILITY
PART NUMBER
HGTH12N40C1
HGTH12N40E1
HGTH12N50C1
HGTH12N50E1
HGTP10N40C1
HGTP10N40E1
HGTP10N50C1
HGTP10N50E1
PACKAGE
TO-218AC
TO-218AC
TO-218AC
TO-218AC
TO-220AB
TO-220AB
TO-220AB
TO-220AB
BRAND
G12N40C1
G12N40E1
G12N50C1
G12N50E1
G10N40C1
G10N40E1
G10N50C1
G10N50E1
E
G
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
C
NOTE: When ordering, use the entire part number.
Absolute Maximum Ratings
T
C
= +25
o
C, Unless Otherwise Specified
HGTH12N40C1
HGTH12N40E1
HGTH12N50C1
HGTH12N50E1
500
500
15
±20
12
17.5
75
0.6
-55 to +150
HGTP10N40C1
HGTP10N40E1
400
400
-5
±20
10
17.5
60
0.48
-55 to +150
HGTP10N50C1
HGTP10N50E1 UNITS
500
500
-5
±20
10
17.5
60
0.48
-55 to +150
V
V
V
V
A
A
W
W/
o
C
o
C
Collector-Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . .V
CES
Collector-Gate Voltage R
GE
= 1MΩ. . . . . . . . . . . . . . . . V
CGR
Reverse Collector-Emitter Voltage . . . . . . . . . . . . V
ECS
(rev.)
Gate-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GE
Collector Current Continuous . . . . . . . . . . . . . . . . . . . . . . . I
C
Collector Current Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . I
CM
Power Dissipation at T
C
= +25
o
C . . . . . . . . . . . . . . . . . . . P
D
Power Dissipation Derating Above T
C
>
+25
o
C
...........
Operating and Storage Junction Temperature Range . . . T
J
, T
STG
400
400
15
±20
12
17.5
75
0.6
-55 to +150
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207
|
Copyright
©
Intersil Corporation 1999
File Number
1697.3
3-15

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