HGTP10N40C1, 40E1, 50C1, 50E1,
HGTH12N40C1, 40E1, 50C1, 50E1
April 1995
10A, 12A,
400V and 500V N-Channel IGBTs
Packages
HGTH-TYPES JEDEC TO-218AC
EMITTER
COLLECTOR
COLLECTOR
(FLANGE)
GATE
Features
• 10A and 12A, 400V and 500V
• V
CE(ON)
: 2.5V Max.
• T
FI
: 1µs, 0.5µs
• Low On-State Voltage
• Fast Switching Speeds
• High Input Impedance
• No Anti-Parallel Diode
Applications
HGTP-TYPES JEDEC TO-220AB
• Power Supplies
• Motor Drives
• Protection Circuits
COLLECTOR
(FLANGE)
EMITTER
COLLECTOR
GATE
Description
The HGTH12N40C1, HGTH12N40E1, HGTH12N50C1, HGTH12N50E1,
HGTP10N40C1, HGTP10N40E1, HGTP10N50C1 and HGTP10N50E1
are n-channel enhancement-mode insulated gate bipolar transistors
(IGBTs) designed for high-voltage, low on-dissipation applications such as
switching regulators and motor drivers. These types can be operated
directly from low-power integrated circuits.
PACKAGING AVAILABILITY
PART NUMBER
HGTH12N40C1
HGTH12N40E1
HGTH12N50C1
HGTH12N50E1
HGTP10N40C1
HGTP10N40E1
HGTP10N50C1
HGTP10N50E1
PACKAGE
TO-218AC
TO-218AC
TO-218AC
TO-218AC
TO-220AB
TO-220AB
TO-220AB
TO-220AB
BRAND
G12N40C1
G12N40E1
G12N50C1
G12N50E1
G10N40C1
G10N40E1
G10N50C1
G10N50E1
E
G
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
C
NOTE: When ordering, use the entire part number.
Absolute Maximum Ratings
T
C
= +25
o
C, Unless Otherwise Specified
HGTH12N40C1
HGTH12N40E1
HGTH12N50C1
HGTH12N50E1
500
500
15
±20
12
17.5
75
0.6
-55 to +150
HGTP10N40C1
HGTP10N40E1
400
400
-5
±20
10
17.5
60
0.48
-55 to +150
HGTP10N50C1
HGTP10N50E1 UNITS
500
500
-5
±20
10
17.5
60
0.48
-55 to +150
V
V
V
V
A
A
W
W/
o
C
o
C
Collector-Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . .V
CES
Collector-Gate Voltage R
GE
= 1MΩ. . . . . . . . . . . . . . . . V
CGR
Reverse Collector-Emitter Voltage . . . . . . . . . . . . V
ECS
(rev.)
Gate-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GE
Collector Current Continuous . . . . . . . . . . . . . . . . . . . . . . . I
C
Collector Current Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . I
CM
Power Dissipation at T
C
= +25
o
C . . . . . . . . . . . . . . . . . . . P
D
Power Dissipation Derating Above T
C
>
+25
o
C
...........
Operating and Storage Junction Temperature Range . . . T
J
, T
STG
400
400
15
±20
12
17.5
75
0.6
-55 to +150
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207
|
Copyright
©
Intersil Corporation 1999
File Number
1697.3
3-15
Specifications HGTP10N40C1, 40E1, 50C1, 50E1, HGTH12N40C1, 40E1, 50C1, 50E1
Electrical Specifications
T
C
= +25
o
C, Unless Otherwise Specified
LIMITS
HGTH12N40C1, E1,
HGTP10N40C1, E1
PARAMETERS
Collector-Emitter Breakdown
Voltage
Gate Threshold Voltage
SYMBOL
BV
CES
V
GE(TH)
I
CES
TEST CONDITIONS
I
C
= 1mA, V
GE
= 0
V
GE
= V
CE
, I
C
= 1mA
V
CE
= 400V, T
C
= +25
o
C
V
CE
= 500V, T
C
= +25
o
C
V
CE
= 400V, T
C
= +125
o
C
V
CE
= 500V, T
C
= +125
o
C
Gate-Emitter Leakage Current
Collector-Emitter on Voltage
I
GES
V
CE(ON)
V
GE
=
±20V,
V
CE
= 0
I
C
= 10A, V
GE
= 10V
I
C
= 17.5A, V
GE
= 20V
Gate-Emitter Plateau Voltage
On-State Gate Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
40E1, 50E1
40C1, 50C1
Turn-Off Energy Loss per Cycle
(Off Switching Dissipation =
W
OFF
x Frequency)
40E1, 50E1
40C1, 50C1
Thermal Resistance
Junction-to-Case
R
θJC
HGTH, HGTM
HGTP
-
-
W
OFF
I
C
= 10A, V
CE(CLP)
= 300V,
L = 50µH, T
J
= +100
o
C,
V
GE
= 10V, R
G
= 50Ω
680 (Typ)
400 (Typ)
1.67
2.083
-
-
1.67
2.083
µJ
µJ
o
C/W
o
C/W
HGTH12N50C1, E1,
HGTP10N50C1, E1
MIN
500
MAX
-
UNITS
V
MIN
400
MAX
-
2.0
4.5
3 (Typ)
250
-
1000
-
100
2.5
3.2
6 (Typ)
19 (Typ)
50
50
400
2.0
4.5
3 (Typ)
-
250
-
1000
100
2.5
3.2
6 (Typ)
19 (Typ)
50
50
400
V
µA
µA
µA
µA
nA
V
V
V
nC
ns
ns
ns
Zero Gate Voltage Collector
Current
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
V
GEP
Q
G(ON)
t
D(ON)I
t
RI
t
D(OFF)I
t
FI
I
C
= 5A, V
CE
= 10V
I
C
= 5A, V
CE
= 10V
I
C
= 10A, V
CE(CLP)
= 300V,
L = 50µH, T
J
= +100
o
C,
V
GE
= 10V, R
G
= 50Ω
680 (Typ)
400
1000
500
680 (Typ)
400
1000
500
ns
ns
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
4,364,073
4,587,713
4,641,162
4,794,432
4,860,080
4,969,027
4,417,385
4,598,461
4,644,637
4,801,986
4,883,767
4,430,792
4,605,948
4,682,195
4,803,533
4,888,627
4,443,931
4,618,872
4,684,413
4,809,045
4,890,143
4,466,176
4,620,211
4,694,313
4,809,047
4,901,127
4,516,143
4,631,564
4,717,679
4,810,665
4,904,609
4,532,534
4,639,754
4,743,952
4,823,176
4,933,740
4,567,641
4,639,762
4,783,690
4,837,606
4,963,951
3-16
HGTP10N40C1, 40E1, 50C1, 50E1, HGTH12N40C1, 40E1, 50C1, 50E1
Typical Performance Curves
20.0
V
GE
= 10V, R
GEN
= R
GE
= 100Ω
RATED POWER DISSIPATION (%)
-50
-25
0
+25
+50 +75 +100 +125 +150 +175
(
o
C)
17.5
I
CE
, COLLECTOR CURRENT (A)
15.0
12.5
10.0
7.5
5.0
2.5
0.0
-75
100
80
60
40
20
0
+25
+50
+75
+100
+125
+150
T
D
, JUNCTION TEMPERATURE
T
C
, CASE TEMPERATURE (
o
C)
FIGURE 1. MAX. SWITCHING CURRENT LEVEL. R
G
= 50Ω,
V
GE
= 0V ARE THE MIN. ALLOWABLE VALUES
FIGURE 2. POWER DISSIPATION vs TEMPERATURE DERAT-
ING CURVE
NORMALIZED GATE THRESHOLD VOLTAGE
1.3
1.2
1.1
1.0
0.9
0.8
0.7
r(t), EFFECTIVE TRANSIENT THERMAL
IMPEDANCE (NORMALIZED)
V
GE
= V
CE
, I
C
= 1mA
Z
θJC
(t) = r(t)R
θJC
,
D CURVES APPLY FOR POWER PULSE,
TRAIN SHOWN READ TIME AT t1,
T
J(PEAK)
- T
C
= P
(PEAK)
Z
θJC
(t)
10
1.0
D = 0.5
D = 0.2
0.1
D = 0.05
SINGLE PULSE
0.1
1.0
10
t, TIME (ms)
100
1000
-50
0
+50
+100
+150
(
o
C)
0.01
0.01
T
J
, JUNCTION TEMPERATURE
FIGURE 3. TYPICAL NORMALIZED GATE THRESHOLD VOLT-
AGE vs JUNCTION TEMPERATURE
FIGURE 4. NORMALIZED THERMAL RESPONSE CHARAC-
TERISTICS
I
CE
, ON-STATE COLLECTOR CURRENT (A)
17.5
T
C
= +25
o
C
17.5
V
GE
= 20V
I
CE
, COLLECTOR CURRENT (A)
15.0
12.5
10.0
7.5
5.0
2.5
+125
o
C
0
2.5
5.0
7.5
10.0
0
V
GE
= 4V
V
GE
= 10V
V
GE
= 8V
V
GE
= 6V
V
GE
= 7V
PULSE TEST, V
CE
= 10V
PULSE DURATION = 80µs
15.0 DUTY CYCLE = 0.5% MAX.
12.5
10.0
7.5
5.0
+25
o
C
2.5
-40
o
C
V
GE
= 5V
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
1
2
3
4
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
5
FIGURE 5. TYPICAL TRANSFER CHARACTERISTICS
FIGURE 6. TYPICAL SATURATION CHARACTERISTICS
3-17
HGTP10N40C1, 40E1, 50C1, 50E1, HGTH12N40C1, 40E1, 50C1, 50E1
Typical Performance Curves
(Continued)
17.5
15.0
12.5
10.0
7.5
5.0
2.5
+25
o
C
PULSE TEST, V
GE
= 10V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX.
C, CAPACITANCE (pF)
1200
f = 1MHz
I
CE
, COLLECTOR CURRENT (A)
1000
800
CISS
600
400
200
CRSS
0
COSS
0
0
1
2
3
4
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
10
20
30
40
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
50
FIGURE 7. TYPICAL COLLECTOR-TO-EMITTER ON-VOLTAGE
vs COLLECTOR CURRENT
FIGURE 8. CAPACITANCE vs COLLECTOR-TO-EMITTER
VOLTAGE
V
CE(ON)
, COLLECTOR-EMITTER ON VOLTAGE (V)
3.00
400
I
C
= 10A, V
GE
= 10V, V
CL
= 300V
L = 50µH, R
G
= 50Ω
t
D(OFF)I
, SWITCHING TIME (ns)
+125
(
o
C)
+150
2.75
I
C
= 10A, V
GE
= 10V
2.50
I
C
= 10A, V
GE
= 15V
2.25
300
200
2.00
1.75
I
C
= 5A, V
GE
= 10V
100
1.50
+25
I
C
= 5A, V
GE
= 15V
+50
+75
+100
0
+25
T
J
, JUNCTION TEMPERATURE
+50
+75
+100
+125
T
J
, JUNCTION TEMPERATURE (
o
C)
+150
FIGURE 9. TYPICAL V
CE(ON)
vs TEMPERATURE
FIGURE 10. TYPICAL TURN-OFF DELAY TIME
E
OFF
=
∫
I
C
*
V
CE
dt
V
GE
I
C
t
FI
, SWITCHING TIME (ns)
800
700
600
40E1/50E1
500
400
40C1/50C1
300
200
100
0
+25
I
C
= 5A, V
GE
= 10V, V
CL
= 300V
L = 50µH, R
G
= 50Ω
V
CE
+50
+75
+100
+125
+150
T
J
, JUNCTION TEMPERATURE (
o
C)
FIGURE 11. TYPICAL INDUCTIVE SWITCHING WAVEFORMS
FIGURE 12. TYPICAL FALL TIME (I
C
= 5A)
3-18
HGTP10N40C1, 40E1, 50C1, 50E1, HGTH12N40C1, 40E1, 50C1, 50E1
Typical Performance Curves
(Continued)
800
W
OFF
, TURN-OFF ENERGY LOSS (µJ)
700
t
FI
, SWITCHING TIME (ns)
600
500
400
40C1/50C1
300
200
100
0
+25
40E1/50E1
I
C
= 10A, V
GE
= 10V, V
CL
= 300V
L = 50µH, R
G
= 50Ω
1000
900
800
700
600
500
400
300
200
100
0
+25
+50
+75
+100
+125
(
o
C)
+150
5A, 40E1/50E1
5A, 40C1/50C1
10A, 40C1/50C1
V
GE
= 10V, V
CL
= 300V
L = 50µH, R
G
= 50Ω
10A, 40E1/50E1
+50
+75
+100
+125
(
o
C)
+150
T
J
, JUNCTION TEMPERATURE
T
J
, JUNCTION TEMPERATURE
FIGURE 13. TYPICAL FALL TIME (I
C
= 10A)
FIGURE 14. TYPICAL CLAMPED INDUCTIVE TURN-OFF
SWITCHING LOSS/CYCLE
500
V
CE
, COLLECTOR-EMITTER VOLTAGE (V)
10
BV
CES
V
CC
= BV
CES
R
L
= 50Ω
I
G(REF)
= 0.38mA
V
GE
= 10V
GATE-
EMITTER
VOLTAGE
V
CC
= 0.25 BV
CES
8
V
GE
, GATE-EMITTER VOLTAGE (V)
130V
375
6
250
NOTE:
FOR TURN-OFF GATE CURRENTS IN
EXCESS OF 3mA. V
CE
TURN-OFF IS
NOT ACCURATELY REPRESENTED
BY THIS NORMALIZATION.
COLLECTOR-EMITTER VOLTAGE
0
20
I
G(REF)
I
G(ACT)
TIME (µs)
80
I
G(REF)
I
G(ACT)
0
4
125
2
FIGURE 15. NORMALIZED SWITCHING WAVEFORMS
AT CONSTANT GATE CURRENT
Test Circuit
R
L
= 13Ω
L = 50µH
V
CC
V
CE(CLP)
=
300V
20V
0V
R
GE
= 100Ω
1/R
G
= 1/R
GEN
+ 1/R
GE
R
GEN
= 100Ω
FIGURE 16. INDUCTIVE SWITCHING TEST CIRCUIT
3-19
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