UP04210 datasheet, PDF - EEWORLD Datasheet

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UP04210: DescriptionSilicon NPN epitaxial planar type; CategoryDiscrete semiconductor The transistor; File Size143KB，7 Pages; ManufacturerPanasonic; Websitehttp://www.panasonic.co.jp/semicon/e-index.html; Environmental Compliance

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UP04210 Overview

Silicon NPN epitaxial planar type

UP04210 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
package instruction	SMALL OUTLINE, R-PDSO-F6
Contacts	6
Reach Compliance Code	unknow
ECCN code	EAR99
Other features	BUILT-IN BIAS RESISTOR
Maximum collector current (IC)	0.1 A
Collector-emitter maximum voltage	50 V
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	160
JESD-30 code	R-PDSO-F6
JESD-609 code	e6
Humidity sensitivity level	1
Number of components	2
Number of terminals	6
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin/Bismuth (Sn/Bi)
Terminal form	FLAT
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	150 MHz
Base Number Matches	1

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Composite Transistors

UP0421x Series

Silicon NPN epitaxial planar type

Unit : mm

For switching/digital circuits

■

Features

•

Two elements incorporated into one package

(Transistors with built-in resistor)

•

Reduction of the mounting area and assembly cost by one half

(0.30)

0.20

+0.05

–0.02

0.10

±0.02

1.20

±0.05

1.60

±0.05

(0.50)(0.50)

1.00

±0.05

1.60

±0.05

5˚

(0.20)

Display at No.1 lead

0.55

±0.05

■

Resistance by Part Number

•

UP04210

•

UP04211

•

UP04213

•

UP04214

•

UP04215

•

UP04216

Marking Symbol

)

47 kΩ

10 kΩ

47 kΩ

10 kΩ

4.7 kΩ

)



10 kΩ

47 kΩ



5˚

(0.20)

0.10 max.

1: Emitter (Tr1)

2: Base (Tr1)

3: Collector (Tr2)

0 to 0.02

4: Emitter (Tr2)

5: Base (Tr2)

6: Collector (Tr1)

SSMini6-F1 Package

■

Absolute Maximum Ratings

25°C

Parameter

Collector-base voltage (Emitter open)

Collector-emitter voltage (Base open)

Collector current

Total power dissipation

Junction temperature

Storage temperature

Symbol

CBO

CEO

stg

Rating

100

125

−55

+125

Unit

°C

Internal Connection

Tr1

Tr2

Publication date: December 2003

SJJ00002BED

UP04210 Related Products

	UP04210	UP04211	UP04213	UP04214	UP04215	UP04216
Description	Silicon NPN epitaxial planar type	Silicon NPN epitaxial planar type	Silicon NPN epitaxial planar type	Silicon NPN epitaxial planar type	Silicon NPN epitaxial planar type	Silicon NPN epitaxial planar type
Is it Rohs certified?	conform to	conform to	conform to	conform to	conform to	conform to
package instruction	SMALL OUTLINE, R-PDSO-F6	SMALL OUTLINE, R-PDSO-F6	SMALL OUTLINE, R-PDSO-F6	SMALL OUTLINE, R-PDSO-F6	SMALL OUTLINE, R-PDSO-F6	SMALL OUTLINE, R-PDSO-F6
Contacts	6	6	6	6	6	6
Reach Compliance Code	unknow	unknow	unknow	unknow	unknow	unknow
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Other features	BUILT-IN BIAS RESISTOR	BUILT-IN BIAS RESISTOR RATIO 1	BUILT-IN BIAS RESISTOR RATIO 1	BUILT-IN BIAS RESISTOR RATIO 4.7	BUILT-IN BIAS RESISTOR	BUILT-IN BIAS RESISTOR
Maximum collector current (IC)	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A
Collector-emitter maximum voltage	50 V	50 V	50 V	50 V	50 V	50 V
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	160	35	80	80	160	160
JESD-30 code	R-PDSO-F6	R-PDSO-F6	R-PDSO-F6	R-PDSO-F6	R-PDSO-F6	R-PDSO-F6
JESD-609 code	e6	e6	e6	e6	e6	e6
Humidity sensitivity level	1	1	1	1	1	1
Number of components	2	2	2	2	2	2
Number of terminals	6	6	6	6	6	6
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	NPN	NPN	NPN	NPN	NPN	NPN
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES	YES	YES
Terminal surface	Tin/Bismuth (Sn/Bi)	Tin/Bismuth (Sn/Bi)	Tin/Bismuth (Sn/Bi)	Tin/Bismuth (Sn/Bi)	Tin/Bismuth (Sn/Bi)	Tin/Bismuth (Sn/Bi)
Terminal form	FLAT	FLAT	FLAT	FLAT	FLAT	FLAT
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	150 MHz	150 MHz	150 MHz	150 MHz	150 MHz	150 MHz
Base Number Matches	1	1	1	1	1	1

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