PD- 91777
IRG4PH20KD
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
• High short circuit rating optimized for motor control,
t
sc
=10µs, V
CC
= 720V , T
J
= 125°C,
V
GE
= 15V
• Combines low conduction losses with high
switching speed
• Tighter parameter distribution and higher efficiency
than previous generations
• IGBT co-packaged with HEXFRED
TM
ultrafast,
ultrasoft recovery antiparallel diodes
C
Short Circuit Rated
UltraFast IGBT
V
CES
= 1200V
G
E
V
CE(on) typ.
= 3.17V
@V
GE
= 15V, I
C
= 5.0A
n-ch an nel
Benefits
• Latest generation 4 IGBT's offer highest power density
motor controls possible
• HEXFRED
TM
diodes optimized for performance with IGBTs.
Minimized recovery characteristics reduce noise, EMI and
switching losses
TO-247AC
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
I
F
@ T
C
= 100°C
I
FM
t
sc
V
GE
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Max.
1200
11
5.0
22
22
5.0
22
10
± 20
60
24
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1 N•m)
Units
V
A
µs
V
W
°C
Thermal Resistance
Parameter
R
θJC
R
θJC
R
θCS
R
θJA
Wt
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
0.24
–––
6 (0.21)
Max.
2.1
3.5
–––
40
–––
Units
°C/W
g (oz)
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1
6/25/98
IRG4PH20KD
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)CES
∆V
(BR)CES
/∆T
J
V
CE(on)
V
GE(th)
∆V
GE(th)
/∆T
J
g
fe
I
CES
V
FM
I
GES
Parameter
Min. Typ.
Collector-to-Emitter Breakdown Voltage 1200 —
Temperature Coeff. of Breakdown Voltage — 1.13
Collector-to-Emitter Saturation Voltage
— 3.17
— 4.04
— 2.84
Gate Threshold Voltage
3.5
—
Temperature Coeff. of Threshold Voltage
—
-10
Forward Transconductance
2.3 3.5
Zero Gate Voltage Collector Current
—
—
—
—
Diode Forward Voltage Drop
—
2.5
—
2.2
Gate-to-Emitter Leakage Current
—
—
Max. Units
Conditions
—
V
V
GE
= 0V, I
C
= 250µA
— V/°C V
GE
= 0V, I
C
= 2.5mA
4.3
I
C
= 5.0A
V
GE
= 15V
—
V
I
C
= 11A
See Fig. 2, 5
—
I
C
= 5.0A, T
J
= 150°C
6.5
V
CE
= V
GE
, I
C
= 250µA
— mV/°C V
CE
= V
GE
, I
C
= 1mA
—
S
V
CE
= 100V, I
C
= 5.0A
250
µA
V
GE
= 0V, V
CE
= 1200V
1000
V
GE
= 0V, V
CE
= 1200V, T
J
= 150°C
2.9
V
I
C
= 5.0A
See Fig. 13
2.6
I
C
= 5.0A, T
J
= 150°C
±100 nA
V
GE
= ±20V
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Q
g
Q
ge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
sc
t
d(on)
t
r
t
d(off)
t
f
E
ts
L
E
C
ies
C
oes
C
res
t
rr
I
rr
Q
rr
di
(rec)M
/dt
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
Diode Peak Rate of Fall of Recovery
During t
b
Min.
—
—
—
—
—
—
—
—
—
—
10
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ. Max. Units
Conditions
28
43
I
C
= 5.0A
4.4 6.6
nC V
CC
= 400V
See Fig.8
12
18
V
GE
= 15V
50
—
30
—
T
J
= 25°C
ns
100 150
I
C
= 5.0A, V
CC
= 800V
250 380
V
GE
= 15V, R
G
= 50Ω
0.62 —
Energy losses include "tail"
0.30 —
mJ and diode reverse recovery
0.92 1.2
See Fig. 9,10,18
—
—
µs
V
CC
= 720V, T
J
= 125°C
V
GE
= 15V, R
G
= 50Ω
50
—
T
J
= 150°C,
See Fig. 10,11,18
30
—
I
C
= 5.0A, V
CC
= 800V
ns
110 —
V
GE
= 15V, R
G
= 50Ω,
620 —
Energy losses include "tail"
1.6
—
mJ and diode reverse recovery
13
—
nH Measured 5mm from package
435 —
V
GE
= 0V
44
—
pF
V
CC
= 30V
See Fig. 7
8.3
—
ƒ = 1.0MHz
51
77
ns
T
J
= 25°C See Fig.
68 102
T
J
= 125°C
14
I
F
= 5.0A
6.0 9.0
A
T
J
= 25°C See Fig.
7.0
11
T
J
= 125°C
15
V
R
= 200V
183 274
nC T
J
= 25°C See Fig.
285 427
T
J
= 125°C
16
di/dt = 200A/µs
380 —
A/µs T
J
= 25°C See Fig.
307 —
T
J
= 125°C
17
2
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IRG4PH20KD
10
F o r b o th :
LOAD CURRENT (A)
8
D u ty c y c le : 5 0 %
TJ = 1 2 5 ° C
T sink = 9 0 ° C
G a te d riv e a s s p e c ifie d
P o w e r D is s ip a tio n =
15
W
S q u a re w a v e :
6 0% of rate d
volta ge
I
5
3
Id e a l d io d e s
0
0.1
1
10
100
f, Frequency (KHz)
Fig. 1
- Typical Load Current vs. Frequency
(Load Current = I
RMS
of fundamental)
100
100
10
T
J
= 150
°
C
I
C
, Collector-to-Emitter Current (A)
I
C
, Collector-to-Emitter Current (A)
10
T
J
= 150
°
C
1
T
J
= 25
°
C
T
J
= 25
°
C
V
CC
= 50V
5µs PULSE WIDTH
6
8
10
12
14
0.1
1
V
GE
= 15V
20µs PULSE WIDTH
10
1
V
CE
, Collector-to-Emitter Voltage (V)
V
GE
, Gate-to-Emitter Voltage (V)
Fig. 2
- Typical Output Characteristics
Fig. 3
- Typical Transfer Characteristics
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3
IRG4PH20KD
12
5.0
9
V
CE
, Collector-to-Emitter Voltage(V)
V
GE
= 15V
80 us PULSE WIDTH
Maximum DC Collector Current(A)
4.0
I
C
= 10 A
6
3.0
I
C
=
5A
3
I
C
= 2.5 A
0
25
50
75
100
125
150
T
C
, Case Temperature (
°
C)
2.0
-60 -40 -20
0
20
40
60
80 100 120 140 160
T
J
, Junction Temperature (
°
C)
Fig. 4
- Maximum Collector Current vs. Case
Temperature
Fig. 5
- Typical Collector-to-Emitter Voltage
vs. Junction Temperature
10
Thermal Response (Z
thJC
)
1
D = 0.50
0.20
0.10
0.05
P
DM
t
1
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.0001
0.001
0.01
0.1
1
t
2
0.1
0.02
0.01
0.01
0.00001
t
1
, Rectangular Pulse Duration (sec)
Fig. 6
- Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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IRG4PH20KD
20
800
V
GE
, Gate-to-Emitter Voltage (V)
V
GE
=
C
ies
=
C
res
=
C
oes
=
0V,
f = 1MHz
C
ge
+ C
gc ,
C
ce
SHORTED
C
gc
C
ce
+ C
gc
V
CC
= 400V
I
C
= 11A
16
600
C, Capacitance (pF)
C
ies
400
12
8
200
C
oes
C
res
4
0
1
10
100
0
0
5
10
15
20
25
30
V
CE
, Collector-to-Emitter Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig. 7 -
Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 8
- Typical Gate Charge vs.
Gate-to-Emitter Voltage
0.95
Total Switching Losses (mJ)
0.90
Total Switching Losses (mJ)
V
CC
=
800V
960V
V
GE
= 15V
T
J
= 25
°
C
I
C
= 5.0A
10
Ω
R
G
= 50Ohm
V
GE
= 15V
V
CC
=
800V
960V
I
C
=
10
A
I
C
=
1
5
A
I
C
=
2.5
A
0.85
0.80
0
10
20
30
40
50
0.1
-60 -40 -20
0
20
40
60
80 100 120 140 160
R
G
R
,
G
Gate Resistance (Ohm)
, Gate Resistance (
Ω )
T
J
, Junction Temperature (
°
C )
Fig. 9
- Typical Switching Losses vs. Gate
Resistance
Fig. 10
- Typical Switching Losses vs.
Junction Temperature
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