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IRG4PH20KD

Description
IGBT 1200V 11A 60W TO247AC
CategoryDiscrete semiconductor    The transistor   
File Size202KB,11 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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IRG4PH20KD Overview

IGBT 1200V 11A 60W TO247AC

IRG4PH20KD Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerInfineon
package instructionTO-3P, 3 PIN
Reach Compliance Codecompliant
Other featuresLOW CONDUCTION LOSS
Shell connectionCOLLECTOR
Maximum collector current (IC)11 A
Collector-emitter maximum voltage1200 V
ConfigurationSINGLE WITH BUILT-IN DIODE
JEDEC-95 codeTO-247AC
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsMOTOR CONTROL
Transistor component materialsSILICON
Nominal off time (toff)730 ns
Nominal on time (ton)80 ns
Base Number Matches1
PD- 91777
IRG4PH20KD
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
• High short circuit rating optimized for motor control,
t
sc
=10µs, V
CC
= 720V , T
J
= 125°C,
V
GE
= 15V
• Combines low conduction losses with high
switching speed
• Tighter parameter distribution and higher efficiency
than previous generations
• IGBT co-packaged with HEXFRED
TM
ultrafast,
ultrasoft recovery antiparallel diodes
C
Short Circuit Rated
UltraFast IGBT
V
CES
= 1200V
G
E
V
CE(on) typ.
= 3.17V
@V
GE
= 15V, I
C
= 5.0A
n-ch an nel
Benefits
• Latest generation 4 IGBT's offer highest power density
motor controls possible
• HEXFRED
TM
diodes optimized for performance with IGBTs.
Minimized recovery characteristics reduce noise, EMI and
switching losses
TO-247AC
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
I
F
@ T
C
= 100°C
I
FM
t
sc
V
GE
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current

Clamped Inductive Load Current
‚
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Max.
1200
11
5.0
22
22
5.0
22
10
± 20
60
24
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1 N•m)
Units
V
A
µs
V
W
°C
Thermal Resistance
Parameter
R
θJC
R
θJC
R
θCS
R
θJA
Wt
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
0.24
–––
6 (0.21)
Max.
2.1
3.5
–––
40
–––
Units
°C/W
g (oz)
www.irf.com
1
6/25/98

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IRG4PH20KD IRG4PH20KD-EPBF IRG4PH20KD-E
Description IGBT 1200V 11A 60W TO247AC 11A, 1200V, N-CHANNEL IGBT, TO-247AD, TO-247AD, 3 PIN Insulated Gate Bipolar Transistor, 11A I(C), 1200V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN
Is it Rohs certified? conform to conform to incompatible
Maker Infineon Infineon Infineon
package instruction TO-3P, 3 PIN FLANGE MOUNT, R-PSFM-T3 TO-247AD, 3 PIN
Reach Compliance Code compliant compliant unknown
Other features LOW CONDUCTION LOSS LOW CONDUCTION LOSS LOW CONDUCTION LOSS
Shell connection COLLECTOR COLLECTOR COLLECTOR
Maximum collector current (IC) 11 A 11 A 11 A
Collector-emitter maximum voltage 1200 V 1200 V 1200 V
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
JEDEC-95 code TO-247AC TO-247AD TO-247AD
JESD-30 code R-PSFM-T3 R-PSFM-T3 R-PSFM-T3
Number of components 1 1 1
Number of terminals 3 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL
Certification status Not Qualified Not Qualified Not Qualified
surface mount NO NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
transistor applications MOTOR CONTROL MOTOR CONTROL MOTOR CONTROL
Transistor component materials SILICON SILICON SILICON
Nominal off time (toff) 730 ns 730 ns 730 ns
Nominal on time (ton) 80 ns 80 ns 80 ns
Base Number Matches 1 1 1
JESD-609 code - e3 e3
Terminal surface - Matte Tin (Sn) - with Nickel (Ni) barrier Matte Tin (Sn) - with Nickel (Ni) barrier
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