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SI1563DH-T1-E3

Description
MOSFET 20V 1.28/1.0A 16
CategoryDiscrete semiconductor    The transistor   
File Size143KB,9 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Environmental Compliance
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MOSFET 20V 1.28/1.0A 16

SI1563DH-T1-E3 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerVishay
Parts packaging codeSC-70
package instructionSMALL OUTLINE, R-PDSO-G6
Contacts6
Reach Compliance Codeunknown
ECCN codeEAR99
Samacsys Confidence4
Samacsys StatusReleased
Samacsys PartID1312743
Samacsys Pin Count6
Samacsys Part CategoryTransistor
Samacsys Package CategorySOT23 (6-Pin)
Samacsys Footprint NameSC-70 6-LEADS
Samacsys Released Date2018-07-06 11:59:38
Is SamacsysN
ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage20 V
Maximum drain current (Abs) (ID)1.13 A
Maximum drain current (ID)1.13 A
Maximum drain-source on-resistance0.28 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G6
JESD-609 codee3
Humidity sensitivity level1
Number of components2
Number of terminals6
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL AND P-CHANNEL
Maximum power dissipation(Abs)0.74 W
Certification statusNot Qualified
surface mountYES
Terminal surfacePURE MATTE TIN
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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