MPQ6002N datasheet, PDF - EEWORLD Datasheet

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MPQ6002N: Description0.5 A, 30 V, 4 CHANNEL, NPN AND PNP, Si, POWER TRANSISTOR, TO-116; Categorysemiconductor Discrete semiconductor; File Size464KB，6 Pages; ManufacturerMotorola ( NXP ); Websitehttps://www.nxp.com

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MPQ6002N Overview

0.5 A, 30 V, 4 CHANNEL, NPN AND PNP, Si, POWER TRANSISTOR, TO-116

MPQ6002N Parametric

Parameter Name	Attribute value
Number of terminals	14
Transistor polarity	NPN AND PNP
Maximum collector current	0.5000 A
Maximum Collector-Emitter Voltage	30 V
Processing package description	DIP-14
state	ACTIVE
packaging shape	RECTANGULAR
Package Size	IN-LINE
Terminal form	THROUGH-HOLE
terminal coating	TIN LEAD
Terminal location	DUAL
Packaging Materials	PLASTIC/EPOXY
structure	SEPARATE, 4 ELEMENTS
Number of components	4
transistor applications	SWITCHING
Transistor component materials	SILICON
Maximum ambient power consumption	1.25 W
Transistor type	GENERAL PURPOSE POWER
Minimum DC amplification factor	30
Rated crossover frequency	200 MHz

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MPQ6002N Related Products

	MPQ6002N	MPQ6001N	MPQ6001	MPQ6002	MPQ6501N	MPQ6502	MPQ6502N
Description	0.5 A, 30 V, 4 CHANNEL, NPN AND PNP, Si, POWER TRANSISTOR, TO-116	0.5 A, 30 V, 4 CHANNEL, NPN AND PNP, Si, POWER TRANSISTOR, TO-116	0.5 A, 30 V, 4 CHANNEL, NPN AND PNP, Si, POWER TRANSISTOR, TO-116	0.5 A, 30 V, 4 CHANNEL, NPN AND PNP, Si, POWER TRANSISTOR, TO-116	0.5 A, 30 V, 4 CHANNEL, NPN AND PNP, Si, POWER TRANSISTOR, TO-116	0.5 A, 30 V, 4 CHANNEL, NPN AND PNP, Si, POWER TRANSISTOR, TO-116	0.5 A, 30 V, 4 CHANNEL, NPN AND PNP, Si, POWER TRANSISTOR, TO-116
Number of terminals	14	14	14	14	14	14	14
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
Number of components	4	4	4	4	4	4	4
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Transistor polarity	NPN AND PNP	NPN AND PNP	-	-	NPN AND PNP	-	NPN AND PNP
Maximum collector current	0.5000 A	0.5000 A	-	-	0.5000 A	-	0.5000 A
Maximum Collector-Emitter Voltage	30 V	30 V	-	-	30 V	-	30 V
Processing package description	DIP-14	DIP-14	-	-	DIP-14	-	DIP-14
state	ACTIVE	ACTIVE	-	-	ACTIVE	-	ACTIVE
packaging shape	RECTANGULAR	RECTANGULAR	-	-	RECTANGULAR	-	RECTANGULAR
Package Size	IN-LINE	IN-LINE	-	-	IN-LINE	-	IN-LINE
terminal coating	TIN LEAD	TIN LEAD	-	-	TIN LEAD	-	TIN LEAD
Packaging Materials	PLASTIC/EPOXY	PLASTIC/EPOXY	-	-	PLASTIC/EPOXY	-	PLASTIC/EPOXY
structure	SEPARATE, 4 ELEMENTS	SEPARATE, 4 ELEMENTS	-	-	SEPARATE, 4 ELEMENTS	-	SEPARATE, 4 ELEMENTS
Maximum ambient power consumption	1.25 W	1.25 W	-	-	1.25 W	-	1.25 W
Transistor type	GENERAL PURPOSE POWER	GENERAL PURPOSE POWER	-	-	GENERAL PURPOSE POWER	-	GENERAL PURPOSE POWER
Minimum DC amplification factor	30	30	-	-	30	-	30
Rated crossover frequency	200 MHz	200 MHz	-	-	200 MHz	-	200 MHz

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