MPQ6502 datasheet, PDF - EEWORLD Datasheet

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MPQ6502: Description0.5 A, 30 V, 4 CHANNEL, NPN AND PNP, Si, POWER TRANSISTOR, TO-116; CategoryDiscrete semiconductor The transistor; File Size464KB，6 Pages; ManufacturerMotorola ( NXP ); Websitehttps://www.nxp.com

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MPQ6502 Overview

0.5 A, 30 V, 4 CHANNEL, NPN AND PNP, Si, POWER TRANSISTOR, TO-116

MPQ6502 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Motorola ( NXP )
package instruction	IN-LINE, R-PDIP-T14
Reach Compliance Code	unknow
ECCN code	EAR99
Maximum collector current (IC)	0.5 A
Collector-based maximum capacity	8 pF
Collector-emitter maximum voltage	30 V
Configuration	SEPARATE, 4 ELEMENTS
Minimum DC current gain (hFE)	30
JEDEC-95 code	TO-116
JESD-30 code	R-PDIP-T14
JESD-609 code	e0
Number of components	4
Number of terminals	14
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN AND PNP
Maximum power consumption environment	3 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	350 MHz
VCEsat-Max	1.4 V

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MPQ6502 Related Products

	MPQ6502	MPQ6001N	MPQ6001	MPQ6002N	MPQ6002	MPQ6501N	MPQ6502N
Description	0.5 A, 30 V, 4 CHANNEL, NPN AND PNP, Si, POWER TRANSISTOR, TO-116	0.5 A, 30 V, 4 CHANNEL, NPN AND PNP, Si, POWER TRANSISTOR, TO-116	0.5 A, 30 V, 4 CHANNEL, NPN AND PNP, Si, POWER TRANSISTOR, TO-116	0.5 A, 30 V, 4 CHANNEL, NPN AND PNP, Si, POWER TRANSISTOR, TO-116	0.5 A, 30 V, 4 CHANNEL, NPN AND PNP, Si, POWER TRANSISTOR, TO-116	0.5 A, 30 V, 4 CHANNEL, NPN AND PNP, Si, POWER TRANSISTOR, TO-116	0.5 A, 30 V, 4 CHANNEL, NPN AND PNP, Si, POWER TRANSISTOR, TO-116
Number of components	4	4	4	4	4	4	4
Number of terminals	14	14	14	14	14	14	14
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Transistor polarity	-	NPN AND PNP	-	NPN AND PNP	-	NPN AND PNP	NPN AND PNP
Maximum collector current	-	0.5000 A	-	0.5000 A	-	0.5000 A	0.5000 A
Maximum Collector-Emitter Voltage	-	30 V	-	30 V	-	30 V	30 V
Processing package description	-	DIP-14	-	DIP-14	-	DIP-14	DIP-14
state	-	ACTIVE	-	ACTIVE	-	ACTIVE	ACTIVE
packaging shape	-	RECTANGULAR	-	RECTANGULAR	-	RECTANGULAR	RECTANGULAR
Package Size	-	IN-LINE	-	IN-LINE	-	IN-LINE	IN-LINE
terminal coating	-	TIN LEAD	-	TIN LEAD	-	TIN LEAD	TIN LEAD
Packaging Materials	-	PLASTIC/EPOXY	-	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY
structure	-	SEPARATE, 4 ELEMENTS	-	SEPARATE, 4 ELEMENTS	-	SEPARATE, 4 ELEMENTS	SEPARATE, 4 ELEMENTS
Maximum ambient power consumption	-	1.25 W	-	1.25 W	-	1.25 W	1.25 W
Transistor type	-	GENERAL PURPOSE POWER	-	GENERAL PURPOSE POWER	-	GENERAL PURPOSE POWER	GENERAL PURPOSE POWER
Minimum DC amplification factor	-	30	-	30	-	30	30
Rated crossover frequency	-	200 MHz	-	200 MHz	-	200 MHz	200 MHz

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