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70T651S10BFGI8

Description
SRAM 256K X 36 ASYNC DP RAM
Categorystorage   
File Size251KB,29 Pages
ManufacturerIDT (Integrated Device Technology, Inc.)
Websitehttp://www.idt.com/
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70T651S10BFGI8 Overview

SRAM 256K X 36 ASYNC DP RAM

70T651S10BFGI8 Parametric

Parameter NameAttribute value
Product CategorySRAM
ManufacturerIDT (Integrated Device Technology, Inc.)
RoHSDetails
Memory Size9 Mbit
Organization256 k x 36
Access Time10 ns
Interface TypeParallel
Supply Voltage - Max2.6 V
Supply Voltage - Min2.4 V
Supply Current - Max445 mA
Minimum Operating Temperature- 40 C
Maximum Operating Temperature+ 85 C
Mounting StyleSMD/SMT
Package / CaseCABGA-208
PackagingReel
Height1.4 mm
Length15 mm
Memory TypeSDR
Moisture SensitiveYes
Operating Temperature Range- 40 C to + 85 C
Factory Pack Quantity1000
TypeAsynchronous
Width15 mm
LEAD FINISH (SnPb) ARE IN EOL PROCESS - LAST TIME BUY EXPIRES JUNE 15, 2018
IDT70T651/9S
HIGH-SPEED 2.5V
256/128K x 36
ASYNCHRONOUS DUAL-PORT
STATIC RAM
WITH 3.3V 0R 2.5V INTERFACE
Features
True Dual-Port memory cells which allow simultaneous
access of the same memory location
High-speed access
– Commercial: 10/12/15ns (max.)
– Industrial: 10/12ns (max.)
RapidWrite Mode simplifies high-speed consecutive write
cycles
Dual chip enables allow for depth expansion without
external logic
IDT70T651/9 easily expands data bus width to 72 bits or
more using the Master/Slave select when cascading more
than one device
M/S = V
IH
for
BUSY
output flag on Master,
M/S = V
IL
for
BUSY
input on Slave
Busy and Interrupt Flags
BE
3L
BE
2L
BE
1L
BE
0L
On-chip port arbitration logic
Full on-chip hardware support of semaphore signaling
between ports
Fully asynchronous operation from either port
Separate byte controls for multiplexed bus and bus
matching compatibility
Sleep Mode Inputs on both ports
Supports JTAG features compliant to IEEE 1149.1
Single 2.5V (±100mV) power supply for core
LVTTL-compatible, selectable 3.3V (±150mV)/2.5V (±100mV)
power supply for I/Os and control signals on each port
Available in a 256-ball Ball Grid Array, 208-pin Plastic Quad
Flatpack and 208-ball fine pitch Ball Grid Array.
Industrial temperature range (–40°C to +85°C) is available
for selected speeds
Green parts available, see ordering information
Functional Block Diagram
BE
3R
BE
2R
BE
1R
BE
0R
R/
W
L
CE
0L
CE
1L
BB
EE
01
LL
BB
EE
23
LL
BBBB
EEEE
3210
R RRR
R/
W
R
CE
0R
CE
1R
OE
L
Dout0-8_L
Dout0-8_R
Dout9-17_L
Dout9-17_R
Dout18-26_L Dout18-26_R
Dout27-35_L Dout27-35_R
OE
R
256/128K x 36
MEMORY
ARRAY
I/O
0L-
I/O
35L
Di n_L
Di n_R
I/O
0R -
I/O
35R
A
17L(1)
A
0L
Address
Decoder
ADDR_L
ADDR_R
Address
Decoder
A
17R(1)
A
0R
CE
0L
CE
1L
OE
L
R/W
L
BUSY
L(2,3)
SEM
L
INT
L(3)
(4)
ARBITRATION
INTERRUPT
SEMAPHORE
LOGIC
OE
R
R/W
R
CE
0R
CE
1R
TDI
TDO
JTAG
TCK
TMS
TRST
M/S
BUSY
R(2,3)
SEM
R
INT
R(3)
(4)
ZZ
L
ZZ
R
CONTROL
NOTES:
LOGIC
1. Address A
17x
is a NC for IDT70T659.
2.
BUSY
is an input as a Slave (M/S=V
IL
) and an output when it is a Master (M/S=V
IH
).
3.
BUSY
and
INT
are non-tri-state totem-pole outputs (push-pull).
4. The sleep mode pin shuts off all dynamic inputs, except JTAG inputs, when asserted. OPTx,
INTx,
M/S and the sleep
mode pins themselves (ZZx) are not affected during sleep mode.
ZZ
4869 drw 01
NOVEMBER 2017
DSC-5632/9
1
©2017 Integrated Device Technology, Inc.

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Description SRAM 256K X 36 ASYNC DP RAM SRAM 128K X36 STD-PWR 2.5V DUAL PORT RAM SRAM 256K X 36 ASYNC DP RAM SRAM 256K X 36 STD-PWR 2.5V DUAL PORT RAM SRAM 256K X 36 ASYNC DP RAM SRAM 256K X 36 STD-PWR 2.5V DUAL PORT RAM SRAM 128K X36 STD-PWR 2.5V DUAL PORT RAM SRAM 256K X 36 STD-PWR 2.5V DUAL PORT RAM SRAM 256K x 36 Async 3.3V 2.5V Dual-Port RAM
Product Category SRAM SRAM SRAM SRAM SRAM SRAM SRAM SRAM SRAM
Manufacturer IDT (Integrated Device Technology, Inc.) IDT (Integrated Device Technology, Inc.) IDT (Integrated Device Technology, Inc.) IDT (Integrated Device Technology, Inc.) IDT (Integrated Device Technology, Inc.) IDT (Integrated Device Technology, Inc.) IDT (Integrated Device Technology, Inc.) IDT (Integrated Device Technology, Inc.) IDT (Integrated Device Technology, Inc.)
RoHS Details No No No No No No No Details
Package / Case CABGA-208 CABGA-208 CABGA-208 CABGA-256 PQFP-208 CABGA-208 CABGA-208 CABGA-208 CABGA-208
Packaging Reel Bulk Reel Reel Tray Tray Reel Tray Tray
Height 1.4 mm 1.4 mm 1.4 mm 1.4 mm 3.5 mm 1.4 mm 1.4 mm 1.4 mm 1.4 mm
Length 15 mm 15 mm 15 mm 17 mm 28 mm 15 mm 15 mm 15 mm 15 mm
Moisture Sensitive Yes Yes Yes Yes Yes Yes Yes Yes Yes
Factory Pack Quantity 1000 7 1000 1000 6 7 1000 7 7
Width 15 mm 15 mm 15 mm 17 mm 28 mm 15 mm 15 mm 15 mm 15 mm
Memory Size 9 Mbit - 9 Mbit - 9 Mbit 9 Mbit 4 Mbit 9 Mbit -
Organization 256 k x 36 - 256 k x 36 - 256 k x 36 256 k x 36 128 k x 36 256 k x 36 -
Access Time 10 ns - 12 ns - 12 ns 10 ns 12 ns 10 ns -
Interface Type Parallel - Parallel - Parallel Parallel Parallel Parallel -
Supply Voltage - Max 2.6 V - 2.6 V - 2.6 V 2.6 V 2.6 V 2.6 V -
Supply Voltage - Min 2.4 V - 2.4 V - 2.4 V 2.4 V 2.4 V 2.4 V -
Supply Current - Max 445 mA - 395 mA - 395 mA 445 mA 395 mA 405 mA -
Minimum Operating Temperature - 40 C - - 40 C - - 40 C - 40 C - 40 C 0 C -
Maximum Operating Temperature + 85 C - + 85 C - + 85 C + 85 C + 85 C + 70 C -
Mounting Style SMD/SMT - SMD/SMT - SMD/SMT SMD/SMT SMD/SMT SMD/SMT -
Memory Type SDR - SDR - SDR SDR SDR SDR -
Type Asynchronous - Asynchronous - Asynchronous Asynchronous Asynchronous Asynchronous -
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