IXTK200N10L2 datasheet, PDF - EEWORLD Datasheet

IXTK200N10L2: Description32-bit Microcontrollers - MCU 200MHz 2048 KB Flash 512KB-R Ethernetu0026CAN; Categorysemiconductor Discrete semiconductor; File Size128KB，5 Pages; ManufacturerIXYS ( Littelfuse ); Websitehttp://www.ixys.com/

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32-bit Microcontrollers - MCU 200MHz 2048 KB Flash 512KB-R Ethernetu0026CAN

Parameter Name	Attribute value
Product Category	MOSFET
Manufacturer	IXYS ( Littelfuse )
Technology	Si
Mounting Style	Through Hole
Package / Case	TO-264-3
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	100 V
Id - Continuous Drain Current	200 A
Rds On - Drain-Source Resistance	11 mOhms
Vgs th - Gate-Source Threshold Voltage	4.5 V
Vgs - Gate-Source Voltage	20 V
Qg - Gate Charge	540 nC
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Configuration	Single
Channel Mode	Enhancement
Packaging	Tube
Fall Time	27 ns
Forward Transconductance - Min	55 S
Height	26.16 mm
Length	19.96 mm
Pd - Power Dissipation	1.04 kW
Rise Time	225 ns
Factory Pack Quantity	25
Transistor Type	1 N-Channel
Type	Linear L2 Power MOSFET
Typical Turn-Off Delay Time	127 ns
Typical Turn-On Delay Time	40 ns
Width	5.13 mm
Unit Weight	0.264555 oz

	IXTK200N10L2	IXTX200N10L2
Description	32-bit Microcontrollers - MCU 200MHz 2048 KB Flash 512KB-R Ethernetu0026CAN	Multilayer Ceramic Capacitors MLCC - Leaded C0G, 100V, 0.022uF +/-5%
Product Category	MOSFET	MOSFET
Manufacturer	IXYS ( Littelfuse )	IXYS ( Littelfuse )
Technology	Si	Si
Mounting Style	Through Hole	Through Hole
Package / Case	TO-264-3	PLUS-247-3
Transistor Polarity	N-Channel	N-Channel
Vds - Drain-Source Breakdown Voltage	100 V	100 V
Id - Continuous Drain Current	200 A	200 A
Rds On - Drain-Source Resistance	11 mOhms	11 mOhms
Vgs th - Gate-Source Threshold Voltage	4.5 V	4.5 V
Vgs - Gate-Source Voltage	20 V	20 V
Qg - Gate Charge	540 nC	540 nC
Minimum Operating Temperature	- 55 C	- 55 C
Maximum Operating Temperature	+ 150 C	+ 150 C
Channel Mode	Enhancement	Enhancement
Packaging	Tube	Tube
Fall Time	27 ns	27 ns
Forward Transconductance - Min	55 S	55 S
Height	26.16 mm	21.34 mm
Length	19.96 mm	16.13 mm
Pd - Power Dissipation	1.04 kW	1.04 kW
Rise Time	225 ns	225 ns
Factory Pack Quantity	25	30
Type	Linear L2 Power MOSFET	Linear L2 Power MOSFET
Typical Turn-Off Delay Time	127 ns	127 ns
Typical Turn-On Delay Time	40 ns	40 ns
Width	5.13 mm	5.21 mm
Unit Weight	0.264555 oz	0.056438 oz

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