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IC Design Terminology [Copy link]

IC Design Terminology

Abrupt junction Accelerated testing
Acceptor Acceptor atom Accumulation
Accumulating contact
Accumulation region Accumulation layer
Active region Active component Active
device Activation
Activation energy Active region
Admittance Allowed band
Alloy-junction device Aluminum (Aluminium) Aluminum
– oxide Aluminum passivation Ambipolar Ambient temperature
Amorphous Amplifier
Analogue (Analog) comparator Angstrom Anneal Anisotropic
Anode Arsenic (AS) Auger Auger process Auger processAvalanche
Avalanche breakdown Avalanche
excitation
Background carrier Background doping Backward
Backward bias
Ballasting resistor Ball bond Band Band
gap Barrier
Barrier layer
Barrier width Base Base
contact Base stretching Base transit
time Base transport efficiency Base
-width modulation Basis vector
Bias Bilateral switch
Binary code Binary compound semiconductor
Bipolar Bipolar Junction Transistor (BJT)
Bloch Blocking band Blocking
contact Body - centered Body-centred cubic structure Body-centered structureBoltzmann
Bond Bonding electron
Bonding pad Bootstrap circuit Bootstrapped
emitter follower Boron
Borosilicate glass Boundary condition
Bound electron Breadboard
Break down Break over
Brillouin Brillouin zone
Built-in Build-in electric field
Bulk Bulk absorption
Bulk generation Bulk recombination
Burn - in Burn out
Buried channel Buried diffusion region




Can Capacitance
Capture cross section Capture carrier Carrier Carry
bit Carry
-in bit Carry-out bit
Cascade Case
Cathode Center
Ceramic Channel Channel
breakdown Channel current Channel
doping Channel shortening
Channel width Characteristic impedance
Charge Charge-compensation effects
Charge conservation Charge neutrality condition
Charge drive/exchange/sharing/transfer/storage
Chemmical etching 化学腐蚀法 Chemically-Polish 化学抛光
Chemmically-Mechanically Polish (CMP) 化学机械抛光 Chip 芯片
Chip yield 芯片成品率 Clamped 箝位
Clamping diode 箝位二极管 Cleavage plane 解理面
Clock rate 时钟频率 Clock generator 时钟发生器
Clock flip-flop 时钟触发器 Close-packed structure 密堆积结构
Close-loop gain 闭环增益 Collector 集电极
Collision 碰撞 Compensated OP-AMP 补偿运放
Common-base/collector/emitter connection 共基极 / 集电极 / 发射极连接
Common-gate/drain/source connection 共栅 / 漏 / 源连接
Common-mode gain 共模增益 Common-mode input 共模输入
Common-mode rejection ratio (CMRR) 共模抑制比
Compatibility 兼容性 Compensation 补偿
Compensated impurities 补偿杂质 Compensated semiconductor 补偿半导体
Complementary Darlington circuit 互补达林顿电路
Complementary Metal-Oxide-Semiconductor Field-Effect-Transistor(CMOS)
互补金属氧化物半导体场效应晶体管
Complementary error function 余误差函数
Computer-aided design (CAD)/test(CAT)/manufacture(CAM) 计算机辅助设计 / 测试 / 制造
Compound Semiconductor 化合物半导体 Conductance 电导
Conduction band (edge) 导带 ( 底 ) Conduction level/state 导带态
Conductor 导体 Conductivity 电导率
Configuration 组态 Conlomb 库仑
Conpled Configuration Devices 结构组态 Constants 物理常数
Constant energy surface 等能面 Constant-source diffusion 恒定源扩散
Contact 接触 Contamination 治污
Continuity equation 连续性方程 Contact hole 接触孔
Contact potential 接触电势 Continuity condition 连续性条件
Contra doping 反掺杂 Controlled 受控的
Converter 转换器 Conveyer 传输器
Copper interconnection system 铜互连系统 Couping 耦合
Covalent 共阶的 Crossover 跨交
Critical 临界的 Crossunder 穿交
Crucible 坩埚 Crystal defect/face/orientation/lattice 晶体缺陷 / 晶面 / 晶向 / 晶格 Current density 电流密度 Curvature 曲率 Cut off 截止 Current drift/dirve/sharing 电流漂移 / 驱动 / 共享
Current Sense 电流取样 Curvature 弯曲
Custom integrated circuit 定制集成电路 Cylindrical 柱面的
Czochralshicrystal 直立单晶
Czochralski technique 切克劳斯基技术( Cz 法直拉晶体 J )



Dangling bonds 悬挂键 Dark current 暗电流
Dead time 空载时间 Debye length 德拜长度
De.broglie 德布洛意 Decderate 减速
Decibel (dB) 分贝 Decode 译码
Deep acceptor level 深受主能级 Deep donor level 深施主能级
Deep impurity level 深度杂质能级 Deep trap 深陷阱
Defeat 缺陷
Degenerate semiconductor 简并半导体 Degeneracy 简并度
Degradation 退化 Degree Celsius(centigrade) /Kelvin 摄氏 / 开氏温度
Delay 延迟 Density 密度
Density of states 态密度 Depletion 耗尽
Depletion approximation 耗尽近似 Depletion contact 耗尽接触
Depletion depth 耗尽深度 Depletion effect 耗尽效应
Depletion layer 耗尽层 Depletion MOS 耗尽 MOS
Depletion region 耗尽区 Deposited film 淀积薄膜
Deposition process Design rules
Die Diode Dielectric Dielectric isolation
Difference-mode input Differential amplifier Differential
capacitance Diffused junction
Diffusion coefficient Diffusion constant Diffusivity
Diffusion
capacitance/barrier/current/furnace
Digital circuit Dipole domain
Dipole layer Direct-coupling
Direct-gap semiconductor Direct transition
Discharge Discrete component
Dissipation Distribution
Distributed capacitance Distributed model
Displacement Dislocation
Domain Donor
Donor exhaustion Dopant
Doped semiconductor Doped semiconductorDoping concentration
Double-diffusive MOS(DMOS) Drift Drift field
Drift mobility Dry etching
Dry/wet oxidation Dose
Duty cycle Dual-in-line package ( DIP )
Dynamics Dynamic characteristics Dynamic
impedance Dynamic impedance




Early effect Early failure Early failure
Effective mass Einstein relation(ship)
Electric Erase Programmable Read Only Memory(E2PROM)
Electrode Electrominggratim
Electron affinity Electron -grade
Electron-beam photo-resist exposure
Electron gas Electron-grade water Electronic grade pure
waterElectron trapping centerElectron Volt (eV) Electrostatic ElementElemental semiconductorEllipseEllipsoidEmitterEmitter - coupled logicEmitter-coupled pairEmitter followerEmpty bandEmitter crowding effectEndurance test =life testEnergy stateEnergy momentum diagramEnhancement modeEnhancement MOSEnteficEnvironmental testEpitaxialEpitaxial layerEpitaxial sliceExpitaxyEquivalent curcuitEquilibrium majority /
minority carriers Balanced majority / minority carriers Erasable Programmable ROM (EPROM) Error function complement Etch Etchant Etching mask Excess carrier Excitation energy Excited state Exciton Extrapolation Extrinsic Extrinsic semiconductor Face - centered Fall time Fan-in Fan-out Fast recovery Fast surface states
























Feedback Fermi level
Fermi-Dirac Distribution Femi potential Fick
equation Field effect transistor
Field oxide Filled band
Film Flash memory Flat band Flat pack Flicker
noise Flip-flop toggle
Floating gate Fluoride etch
Forbidden band Forward bias Forward blocking /conducting
Frequency deviation noise Frequency
response Function



Gain Gallium-Arsenide(GaAs)
Gamy ray Gate Gate
oxide Gauss ( ian )
Gaussian distribution profile Gaussian doping distributionGeneration-recombination
Geometries Germanium(Ge)
Graded Graded (gradual) channel
Graded junction Grain
Gradient Grown junction Guard ring Gummel-Poom model Gunn-effect



Hardened device Heat of formation
Heat sink Heavy/light hole band
Heavy saturation Hell-effect
Heterojunction Heterojunction structure Heterojunction
Bipolar Transistor (HBT)
High field property High-performance MOS.(H-MOS) Hormalized Horizontal
epitaxial reactor Hot carrier Hybrid integration



Image - force Impact ionization Impedance Imperfect structure
Implantation dose Implanted ion
Impurity Impurity scattering
Incremental resistance In-contact mask
Indium tin oxide (ITO) Induced channel
Infrared Injection
Input offset voltage Insulator
Insulated Gate FET(IGFET) Integrated injection logic Integration Interconnection Interconnection
time delay Interdigitated structure Interface
Interference
International system of unions Internally scattering Interpolation
Intrinsic semiconductor Inverse operation Inversion
Inverter
Ion Ion beam
Ion etching Ion implantation Ionization
Ionization energy
Irradiation Isolation land
Isotropic
Junction FET(JFET) Junction isolation
Junction spacing Junction side-wall

Latch up Lateral
Lattice Layout
Lattice binding/cell/constant/defect/distortion
Leakage current Level shifting
Life time Linearity
Linked bond Liquid Nitrogen Liquid - phase epitaxial growth technique
Lithography Light Emitting Diode (LED)
Load line or Variable Locating and Wiring
Longitudinal Logic swing
Lorentz Lumped model

Majority carrier Mask
Mask level Mask set Mass
- action law Master-slave D flip-flop
Matching Maxwell Mean free path Meandered emitter junction
Mean time before failure (MTBF)
Megeto - resistance Mesa
MESFET-Metal Semiconductor
Metallization Microelectronic technique Microelectronics
Millen indices
Minority carrier Misfit Mismatching
Mobile ions
Mobility Module
Modulate Molecular crystal
Monolithic IC MOSFET Mos. Transistor (MOST) Multiplication Modulator Multi-chip IC Multi
-chip module (MCM) Multiplication coefficient

Naked chip Negative feedback
Negative resistance Nesting
Negative-temperature-coefficient Noise margin Nonequilibrium
Nonrolatile Normally off/on Numerical analysis

Occupied band Official Offset
On standby
Ohmic contact Open circuit
Operating point Operating bias
Operational amplifier (OPAMP)
Optical photon =photon Optical quenching
Optical transition Optical-coupled isolator
Organic semiconductor Orientation Outline
Out-of-contact mask
Output characteristic Output voltage swing
Overcompensation Over-current protection
Over shoot Over-voltage protection Overload
Overlap
Oscillator Oxide
Oxidation Oxide passivation
Package Pad
Parameter Parasitic effect
Parasitic oscillation Passination Passivation
Passive component Passive device
Passive surface Parasitic transistor
Peak-point voltage Peak voltage
Permanent-storage circuit Period
Periodic table Permeable - base
Phase-lock loop Phase drift
Phonon spectra Photo conduction Photo diode Photoelectric cell
Photoelectric effect
Photoenic devices Photolithographic process
(photo) resist Pin
Pinch offPinning of Fermi level
Planar processPlanar transistorPlasmaPlezoelectric
effectPoisson equationPoint contactPolarityPolycrystalPolymer
semiconductorPoly
-siliconPotential Potential barrierPotential
wellPower dissipationPower transistorPreamplifierPrimary flatPrincipal
axesPrint
-circuit board(PCB)ProbabilityProbeProcessPropagation
delayPseudopotential
methodPunch
throughPulse triggering/modulatingPulse Widen Modulator(PWM)
Punchthrough Push-pull stage

Quality factor Quantization
Quantum efficiency Quantum
mechanics Quasi – Fermi level
Quartz

Radiation conductivity Radiation damage Radiation
flux density Radiation hardening
Radiation protection Radiative - recombination
Radioactive Reach through
Reactive sputtering source Read diode Recombination
Recovery diode Reciprocal lattice Recovery time Rectifier Rectifying contact Reference Refractive
index
Register Registration Regulate
Relaxation lifetime
Reliability Resonance
Resistance Resistor
Resistivity Regulator Relaxation
Resonant frequency
Response time Reverse
Reverse bias

Sampling circuit Sapphire
Satellite valley Saturated current range
Saturation region Saturation
Scaled down Scattering Schockley diode Schottky
Schottky barrier Schottky contact Schrodingen
Scribing grid
Secondary flat
Seed crystal Segregation Selectivity
Self aligned Self
diffusion Semiconductor
Semiconductor-controlled rectifier Sendsitivity
Serial Series inductance Series inductance
Settle time Sheet resistance
Shield Short circuit
Shot noise Shunt Sidewall capacitance Signal
Silica glass Silicon
Silicon carbide Silicon dioxide (SiO2) Silicon Nitride(Si3N4) Silicon On Insulator
Siliver whiskers Simple cubic
Single crystal Sink
Skin effect Snap time Sneak
path Sulethreshold
Solar battery/cell Solid circuit
Solid Solubility Sonband
Source Source follower
Space charge Specific heat(PT) Speed-power product Spherical
Spin Split
Spontaneous emission Spreading resistance
Sputter Stacking fault
Static characteristic Stimulated emission
Stimulated recombination Storage time
Stress Straggle
Sublimation Substrate Substitutional Superlattice
Supply Surface
Surge capacity Subscript
Switching time Switch Tailing
Terminal
Tensor Tensorial
Thermal activation Thermal conductivity Thermal equilibrium Thermal Oxidation Thermal resistance Thermal sink
Thermal velocity Thermoelectric potential
Thick-film technique Thin-film hybrid IC
Thin-Film Transistor(TFT) Threshlod
Thyistor Transconductance Transfer
characteristic Transfer electron
Transfer function Transient
Transistor aging(stress) Transit time Transition
Transition-metal silica Transition
probability Transition region
Transport Transverse Trap Trapping Trapped
charge Triangle generator
Triboelectricity Trigger
Trim Triple diffusion
Truth table Tolerance ToleranceTunnel
(ing) Tunnel current
Turn over Turn-off time

Ultraviolet Unijunction Unipolar Unit cell Unity-gain frequency Unilateral-switch Vacancy

Vacuum
Valence(value) band Value band edge
Valence bond Vapour phase Varactor Varistor Vibration Voltage Wafer

Wave equation
Wave guide Wave number Wave
-particle duality Wear-out
Wire routing Work function
Worst-case device

Yield

Zener breakdown
Zone melting
This post is from FPGA/CPLD

Latest reply

very good  Details Published on 2007-2-28 11:39
 

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Haha, it’s like a small dictionary, thanks!
This post is from FPGA/CPLD
 
 

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I finally found it, thank you.
This post is from FPGA/CPLD
 
 
 

4

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So many!
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5

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very good
This post is from FPGA/CPLD
 
 
 

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