BSB104N08NP3 G
OptiMOS™3
Power-MOSFET
Features
• Optimized technology for DC/DC converters
• Excellent gate charge x
R
DS(on)
product (FOM)
• Low profile (<0.7mm)
• Dual sided cooling
• Low parasitic inductance
• N-channel, normal level
Product Summary
V
DS
R
DS(on),max
I
D
CanPAK
TM
M
MG-WDSON-2
80
10.4
50
V
mW
A
Type
BSB104N08NP3 G
Package
MG-WDSON-2
Outline
MP
Marking
0308
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Continuous drain current
Symbol Conditions
I
D
V
GS
=10 V,
T
C
=25 °C
V
GS
=10 V,
T
C
=100 °C
V
GS
=10 V,
T
A
=25 °C,
R
thJA
=45 K/W
1)
Pulsed drain current
2)
Avalanche energy, single pulse
3)
Gate source voltage
1)
Value
50
32
Unit
A
13
200
110
±20
mJ
V
I
D,pulse
E
AS
V
GS
T
C
=25 °C
I
D
=30 A,
R
GS
=25
W
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
2
(one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
2)
3)
See figure 3 for more detailed information
See figure 13 for more detailed information
Rev. 2.1
page 1
2013-11-28
BSB104N08NP3 G
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Power dissipation
Symbol Conditions
P
tot
T
C
=25 °C
T
A
=25 °C,
R
thJA
=45 K/W
1)
Operating and storage temperature
T
j
,
T
stg
Value
42
2.8
-40 ... 150
°C
Unit
W
Parameter
Symbol Conditions
min.
Values
typ.
max.
Unit
Thermal characteristics
Thermal resistance, junction - case
R
thJC
bottom
top
Device on PCB
R
thJA
6 cm
2
cooling area
1)
-
-
-
1.0
-
-
-
3.0
45
K/W
Electrical characteristics,
at
T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
V
(BR)DSS
V
GS
=0 V,
I
D
=1 mA
V
GS(th)
I
DSS
V
DS
=V
GS
,
I
D
=40 µA
V
DS
=80 V,
V
GS
=0 V,
T
j
=25 °C
V
DS
=80 V,
V
GS
=0 V,
T
j
=125 °C
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Transconductance
I
GSS
R
DS(on)
R
G
g
fs
|V
DS
|>2|I
D
|R
DS(on)max
,
I
D
=30 A
V
GS
=20 V,
V
DS
=0 V
V
GS
=10 V,
I
D
=10 A
80
2.0
-
-
2.7
0.1
-
3.5
10
µA
V
-
-
-
-
23
10
10
9.3
2.0
46
100
100
10.4
-
-
nA
mW
W
S
Rev. 2.1
page 2
2013-11-28
BSB104N08NP3 G
Parameter
Symbol Conditions
min.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
4)
Gate to source charge
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Output charge
Reverse Diode
Diode continuous forward current
Diode pulse current
Diode forward voltage
I
S
I
S,pulse
V
SD
V
GS
=0 V,
I
F
=30 A,
T
j
=25 °C
-
T
C
=25 °C
-
-
-
0.9
200
1.2
V
-
30
A
Q
gs
Q
gd
Q
sw
Q
g
V
plateau
Q
oss
V
DD
=40 V,
V
GS
=0 V
V
DD
=40 V,
I
D
=30 A,
V
GS
=0 to 10 V
-
-
-
-
-
-
8
5
8
23
5.0
31
11
8
12
31
-
41
V
nC
nC
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
=40 V,
V
GS
=10 V,
I
D
=30 A,
R
G,ext
=1.6
W
V
GS
=0 V,
V
DS
=40 V,
f
=1 MHz
-
-
-
-
-
-
-
1600
430
18
9
4
19
4
2100
570
27
-
-
-
-
ns
pF
Values
typ.
max.
Unit
Reverse recovery time
t
rr
V
R
=40 V,
I
F
=30 A,
di
F
/dt =100 A/µs
-
43
-
ns
Reverse recovery charge
Q
rr
-
55
-
nC
4)
See figure 16 for gate charge parameter definition
Rev. 2.1
page 3
2013-11-28
BSB104N08NP3 G
1 Power dissipation
P
tot
=f(T
C
)
2 Drain current
I
D
=f(T
C
);
V
GS
≥10 V
45
40
60
50
35
30
40
P
tot
[W]
I
D
[A]
0
25
50
75
100
125
150
175
25
20
15
10
30
20
10
5
0
0
0
25
50
75
100
125
150
175
T
C
[°C]
T
C
[°C]
3 Safe operating area
I
D
=f(V
DS
);
T
C
=25 °C;
D
=0
parameter:
t
p
10
3
limited by on-state
resistance
4 Max. transient thermal impedance
Z
thJC
=f(t
p
)
parameter:
D
=t
p
/T
10
1
1 µs
10
2
10 µs
0.5
100 µs
10
0
1 ms
Z
thJC
[K/W]
10
1
0.2
0.1
I
D
[A]
10 ms
10
0
0.05
DC
10
-1
0.02
0.01
10
-1
single pulse
10
-2
10
-1
10
0
10
1
10
2
10
-2
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
V
DS
[V]
t
p
[s]
Rev. 2.1
page 4
2013-11-28
BSB104N08NP3 G
5 Typ. output characteristics
I
D
=f(V
DS
);
T
j
=25 °C
parameter:
V
GS
200
6 Typ. drain-source on resistance
R
DS(on)
=f(I
D
);
T
j
=25 °C
parameter:
V
GS
20
4.5 V
10 V
8V
16
5.5 V
6V
150
R
DS(on)
[mW]
12
8V
10 V
I
D
[A]
100
6V
8
50
5.5 V
4
5V
4.5V
0
0
1
2
3
0
0
50
100
150
200
V
DS
[V]
I
D
[A]
7 Typ. transfer characteristics
I
D
=f(V
GS
); |V
DS
|>2|I
D
|R
DS(on)max
parameter:
T
j
120
8 Typ. forward transconductance
g
fs
=f(I
D
);
T
j
=25 °C
120
100
80
80
60
40
g
fs
[S]
40
150 °C
25 °C
I
D
[A]
20
0
0
2
4
6
8
0
0
30
60
90
120
V
GS
[V]
I
D
[A]
Rev. 2.1
page 5
2013-11-28
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