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2N6292G

Description
Diodes - General Purpose, Power, Switching 100V Io/200mA BULK
CategoryDiscrete semiconductor    The transistor   
File Size98KB,5 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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2N6292G Overview

Diodes - General Purpose, Power, Switching 100V Io/200mA BULK

2N6292G Parametric

Parameter NameAttribute value
Brand NameON Semiconductor
Is it lead-free?Lead free
Parts packaging codeTO-220AB
package instructionROHS COMPLIANT, PLASTIC, CASE 221A-09, 3 PIN
Contacts3
Manufacturer packaging code221A-09
Reach Compliance Codenot_compliant
ECCN codeEAR99
Factory Lead Time1 week
Other featuresLEADFORM OPTIONS ARE AVAILABLE
Shell connectionCOLLECTOR
Maximum collector current (IC)7 A
Collector-emitter maximum voltage70 V
ConfigurationSINGLE
Minimum DC current gain (hFE)30
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
JESD-609 codee3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Maximum power dissipation(Abs)16 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)4 MHz
Base Number Matches1
2N6107, 2N6109, 2N6111 (PNP),
2N6288, 2N6292 (NPN)
Complementary Silicon
Plastic Power Transistors
These devices are designed for use in general−purpose amplifier and
switching applications.
Features
www.onsemi.com
High DC Current Gain
High Current Gain − Bandwidth Product
TO−220 Compact Package
These Devices are Pb−Free and are RoHS Compliant*
7 AMPERE
POWER TRANSISTORS
COMPLEMENTARY SILICON
30 − 50 − 70 VOLTS, 40 WATTS
PNP
NPN
COLLECTOR 2, 4
MAXIMUM RATINGS
(Note 1)
Rating
Collector−Emitter Voltage
2N6111, 2N6288
2N6109
2N6107, 2N6292
Collector−Base Voltage
2N6111, 2N6288
2N6109
2N6107, 2N6292
Emitter−Base Voltage
Collector Current − Continuous
Collector Current − Peak
Base Current
Total Power Dissipation
@ T
C
= 25_C
Derate above 25_C
Operating and Storage Junction
Temperature Range
Symbol
V
CEO
30
50
70
V
CB
40
60
80
V
EB
I
C
I
CM
I
B
P
D
40
0.32
T
J
, T
stg
−65 to +150
W
W/°C
°C
5.0
7.0
10
3.0
Vdc
Adc
Adc
Adc
Vdc
Value
Unit
Vdc
1
BASE
COLLECTOR 2, 4
1
BASE
EMITTER 3
4
EMITTER 3
TO−220
CASE 221A
STYLE 1
1
2
3
MARKING DIAGRAM
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Indicates JEDEC Registered Data.
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction−to−Case
Symbol
R
qJC
Max
3.125
Unit
_C/W
2N6xxxG
AYWW
2N6xxx
xxx
G
A
Y
WW
= Specific Device Code
= See Table on Page 4
= Pb−Free Package
= Assembly Location
= Year
= Work Week
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2014
ORDERING INFORMATION
See detailed ordering, marking, and shipping information in
the package dimensions section on page 4 of this data sheet.
1
November, 2014 − Rev. 11
Publication Order Number:
2N6107/D

2N6292G Related Products

2N6292G BLU1206P-1110-TT15Q 2N6288 2N6107
Description Diodes - General Purpose, Power, Switching 100V Io/200mA BULK Fixed Resistor, Thin Film, 0.25W, 111ohm, 150V, 0.01% +/-Tol, 15ppm/Cel, 1206 7.0 A, 30 V NPN Bipolar Power Transistor, TO-220 3 LEAD STANDARD, 50-TUBE 7.0 A, 70 V PNP Bipolar Power Transistor, TO-220 3 LEAD STANDARD, 50-TUBE
Reach Compliance Code not_compliant compliant not_compliant not_compliant
ECCN code EAR99 EAR99 EAR99 EAR99
Number of terminals 3 2 3 3
Maximum operating temperature 150 °C 155 °C 150 °C 150 °C
Package form FLANGE MOUNT SMT FLANGE MOUNT FLANGE MOUNT
Brand Name ON Semiconductor - onsemi onsemi
Is it lead-free? Lead free - Contains lead Contains lead
Parts packaging code TO-220AB - TO-220 3 LEAD STANDARD TO-220 3 LEAD STANDARD
package instruction ROHS COMPLIANT, PLASTIC, CASE 221A-09, 3 PIN - PLASTIC, CASE 221A-09, 3 PIN PLASTIC, CASE 221A-09, 3 PIN
Contacts 3 - 3 3
Manufacturer packaging code 221A-09 - 221A 221A
Maximum collector current (IC) 7 A - 7 A 7 A
Collector-emitter maximum voltage 70 V - 30 V 70 V
Configuration SINGLE - SINGLE SINGLE
Minimum DC current gain (hFE) 30 - 30 30
JEDEC-95 code TO-220AB - TO-220AB TO-220AB
JESD-30 code R-PSFM-T3 - R-PSFM-T3 R-PSFM-T3
JESD-609 code e3 e0 - e0
Number of components 1 - 1 1
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR - RECTANGULAR RECTANGULAR
Polarity/channel type NPN - NPN PNP
Maximum power dissipation(Abs) 16 W - 16 W 40 W
Certification status Not Qualified - Not Qualified Not Qualified
surface mount NO - NO NO
Terminal surface Tin (Sn) Tin/Lead (Sn/Pb) - with Nickel (Ni) barrier - Tin/Lead (Sn/Pb)
Terminal form THROUGH-HOLE - THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE - SINGLE SINGLE
Transistor component materials SILICON - SILICON SILICON
Nominal transition frequency (fT) 4 MHz - 2 MHz 10 MHz
Objectid - 738076656 1404817040 1531625374
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