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CXDM3069N-TR

Description
MOSFET 30Vds N-Ch Enh FET 12Vgs 40A 1.2W 6.9A
Categorysemiconductor    Discrete semiconductor   
File Size419KB,3 Pages
ManufacturerCentral Semiconductor
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CXDM3069N-TR Overview

MOSFET 30Vds N-Ch Enh FET 12Vgs 40A 1.2W 6.9A

CXDM3069N-TR Parametric

Parameter NameAttribute value
Product CategoryMOSFET
ManufacturerCentral Semiconductor
RoHSDetails
TechnologySi
Mounting StyleSMD/SMT
Package / CaseSOT-89-3
Number of Channels1 Channel
Transistor PolarityN-Channel
Vds - Drain-Source Breakdown Voltage30 V
Id - Continuous Drain Current6.9 A
Rds On - Drain-Source Resistance50 mOhms
Vgs - Gate-Source Voltage12 V
Qg - Gate Charge11 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
ConfigurationSingle
Channel ModeEnhancement
PackagingCut Tape
PackagingMouseReel
PackagingReel
Pd - Power Dissipation1.2 W
Factory Pack Quantity1000
Transistor Type1 N-Channel
Unit Weight0.004603 oz
CXDM3069N
SURFACE MOUNT
N-CHANNEL
ENHANCEMENT-MODE
SILICON MOSFET
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CXDM3069N is
a high current N-channel enhancement-mode silicon
MOSFET, designed for high speed pulsed amplifier
and driver applications. This MOSFET offers high
current, low rDS(ON), low threshold voltage, and low
leakage current.
MARKING: FULL PART NUMBER
SOT-89 CASE
APPLICATIONS:
Load/Power switches
Power supply converter circuits
Battery powered portable equipment
MAXIMUM RATINGS:
(TA=25°C)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Steady State)
Maximum Pulsed Drain Current, tp=10μs
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
FEATURES:
Low rDS(ON) (50mΩ MAX @ VGS=2.5V)
High current (ID=6.9A)
Logic level compatibility
SYMBOL
VDS
VGS
ID
IDM
PD
TJ, Tstg
Θ
JA
UNITS
V
V
A
A
W
°C
°C/W
30
12
6.9
40
1.2
-55 to +150
104
ELECTRICAL CHARACTERISTICS:
(TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
I
GSSF, IGSSR
VGS=12V, VDS=0
IDSS
VDS=24V, VGS=0
BVDSS
VGS(th)
rDS(ON)
rDS(ON)
rDS(ON)
Qg(tot)
Qgs
Qgd
Crss
Ciss
Coss
ton
toff
VGS=0, ID=250μA
VGS=VDS, ID=250μA
VGS=10V, ID=7.0A
VGS=4.5V, ID=6.0A
VGS=2.5V, ID=4.0A
VDS=15V, VGS=10V, ID=5.4A
VDS=15V, VGS=10V, ID=5.4A
VDS=15V,
VDS=15V,
VGS=10V, ID=5.4A
VGS=0, f=1.0MHz
30
0.7
0.9
25
28
38
11
1.0
1.2
47
580
42
20
28
MAX
100
1.0
1.4
30
35
50
UNITS
nA
μA
V
V
nC
nC
nC
pF
pF
pF
ns
ns
VDS=15V, VGS=0, f=1.0MHz
VDS=15V, VGS=0, f=1.0MHz
VDD=15V, ID=1.0A, RG=15Ω
VDD=15V, ID=1.0A, RG=15Ω
R1 (10-August 2012)
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