CXDM3069N
SURFACE MOUNT
N-CHANNEL
ENHANCEMENT-MODE
SILICON MOSFET
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CXDM3069N is
a high current N-channel enhancement-mode silicon
MOSFET, designed for high speed pulsed amplifier
and driver applications. This MOSFET offers high
current, low rDS(ON), low threshold voltage, and low
leakage current.
MARKING: FULL PART NUMBER
SOT-89 CASE
APPLICATIONS:
•
Load/Power switches
•
Power supply converter circuits
•
Battery powered portable equipment
MAXIMUM RATINGS:
(TA=25°C)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Steady State)
Maximum Pulsed Drain Current, tp=10μs
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
FEATURES:
•
Low rDS(ON) (50mΩ MAX @ VGS=2.5V)
•
High current (ID=6.9A)
•
Logic level compatibility
SYMBOL
VDS
VGS
ID
IDM
PD
TJ, Tstg
Θ
JA
UNITS
V
V
A
A
W
°C
°C/W
30
12
6.9
40
1.2
-55 to +150
104
ELECTRICAL CHARACTERISTICS:
(TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
I
GSSF, IGSSR
VGS=12V, VDS=0
IDSS
VDS=24V, VGS=0
BVDSS
VGS(th)
rDS(ON)
rDS(ON)
rDS(ON)
Qg(tot)
Qgs
Qgd
Crss
Ciss
Coss
ton
toff
VGS=0, ID=250μA
VGS=VDS, ID=250μA
VGS=10V, ID=7.0A
VGS=4.5V, ID=6.0A
VGS=2.5V, ID=4.0A
VDS=15V, VGS=10V, ID=5.4A
VDS=15V, VGS=10V, ID=5.4A
VDS=15V,
VDS=15V,
VGS=10V, ID=5.4A
VGS=0, f=1.0MHz
30
0.7
0.9
25
28
38
11
1.0
1.2
47
580
42
20
28
MAX
100
1.0
1.4
30
35
50
UNITS
nA
μA
V
V
mΩ
mΩ
mΩ
nC
nC
nC
pF
pF
pF
ns
ns
VDS=15V, VGS=0, f=1.0MHz
VDS=15V, VGS=0, f=1.0MHz
VDD=15V, ID=1.0A, RG=15Ω
VDD=15V, ID=1.0A, RG=15Ω
R1 (10-August 2012)
OUTSTANDING SUPPORT AND SUPERIOR SERVICES
PRODUCT SUPPORT
Central’s operations team provides the highest level of support to insure product is delivered on-time.
• Supply management (Customer portals)
• Custom bar coding for shipments
• Inventory bonding
• Custom product packing
• Consolidated shipping options
DESIGNER SUPPORT/SERVICES
Central’s applications engineering team is ready to discuss your design challenges. Just ask.
• Free quick ship samples (2
nd
day air)
• Special wafer diffusions
• Online technical data and parametric search
• PbSn plating options
• SPICE models
• Package details
• Custom electrical curves
• Application notes
• Environmental regulation compliance
• Application and design sample kits
• Customer specific screening
• Custom product and package development
• Up-screening capabilities
REQUESTING PRODUCT PLATING
1.
2.
If requesting Tin/Lead plated devices, add the suffix “ TIN/LEAD” to the part number when
ordering (example: 2N2222A TIN/LEAD).
If requesting Lead (Pb) Free plated devices, add the suffix “ PBFREE” to the part number
when ordering (example: 2N2222A PBFREE).
CONTACT US
Corporate Headquarters & Customer Support Team
Central Semiconductor Corp.
145 Adams Avenue
Hauppauge, NY 11788 USA
Main Tel: (631) 435-1110
Main Fax: (631) 435-1824
Support Team Fax: (631) 435-3388
www.centralsemi.com
Worldwide Field Representatives:
www.centralsemi.com/wwreps
Worldwide Distributors:
www.centralsemi.com/wwdistributors
For the latest version of Central Semiconductor’s
LIMITATIONS AND DAMAGES DISCLAIMER,
which is part of Central’s Standard Terms and Conditions of sale, visit: www.centralsemi.com/terms
w w w. c e n t r a l s e m i . c o m
(001)