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MGFC40V7177

Description
7.1 - 7.7GHz BAND 10W INTERNALLY MATCHED GaAs FET
CategoryDiscrete semiconductor    The transistor   
File Size81KB,2 Pages
ManufacturerMitsubishi
Websitehttp://www.mitsubishielectric.com/semiconductors/
Download Datasheet Parametric View All

MGFC40V7177 Overview

7.1 - 7.7GHz BAND 10W INTERNALLY MATCHED GaAs FET

MGFC40V7177 Parametric

Parameter NameAttribute value
MakerMitsubishi
package instructionFLANGE MOUNT, R-CDFM-F2
Contacts2
Reach Compliance Codeunknow
ECCN codeEAR99
Is SamacsysN
Other featuresHIGH RELIABILITY
Shell connectionSOURCE
ConfigurationSINGLE
Minimum drain-source breakdown voltage10 V
Maximum drain current (Abs) (ID)6 A
Maximum drain current (ID)2.4 A
FET technologyJUNCTION
highest frequency bandC BAND
JESD-30 codeR-CDFM-F2
Number of components1
Number of terminals2
Operating modeDEPLETION MODE
Maximum operating temperature175 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum power consumption environment43 W
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsGALLIUM ARSENIDE
Base Number Matches1
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