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MGFC5212

Description
K-Band 2-Stage Power Amplifier
CategoryWireless rf/communication    Radio frequency and microwave   
File Size25KB,4 Pages
ManufacturerMitsubishi
Websitehttp://www.mitsubishielectric.com/semiconductors/
Download Datasheet Parametric View All

MGFC5212 Overview

K-Band 2-Stage Power Amplifier

MGFC5212 Parametric

Parameter NameAttribute value
MakerMitsubishi
package instructionDIE OR CHIP
Reach Compliance Codeunknow
structureCOMPONENT
Gain13 dB
Maximum input power (CW)16 dBm
Maximum operating frequency26500 MHz
Minimum operating frequency24500 MHz
Maximum operating temperature70 °C
Minimum operating temperature-20 °C
Encapsulate equivalent codeDIE OR CHIP
power supply5 V
RF/Microwave Device TypesWIDE BAND MEDIUM POWER
technologyGAAS
Maximum voltage standing wave ratio2.2
PRELIMINARY
Notice : This is not a final specification
Some parametric limits are subject to change.
MITSUBISHI SEMICONDUCTOR <GaAs MMIC>
MGFC5212
K-Band 2-Stage Power Amplifier
DESCRIPTION
The MGFC5212 is a GaAs MMIC chip especially
designed for 24.5 ~ 26.5 GHz band High
Power Amplifier (HPA) .
BLOCK DIAGRAM
Vg1
Vg2
FEATURES
RF frequency : 24.5 to 26.5 GHz
Linear gain :
13 dB
P1dB :
23 dBm
DC power : Vd = 5 V, Id1 + Id2 = 270 mA
In
Out
Vd1
Vd2
ABSOLUTE MAXIMUM RATINGS (Ta = 25 ˚C)
Symbol
Vd1, Vd2
Vg1, Vg2
Id1
Id2
Pin
Ta
Tstg
Tmax
Parameter
Drain supply voltage
Gate supply voltage
Drain current 1
Drain current 2
RF input power
Backside ambient temp.
Storage temp.
Maximum assembly temp.
Ratings
6
-3
~ 0.5
120
240
16
-20 ~ +70
-65 ~ +175
+300
Units
V
V
mA
mA
dBm
˚C
˚C
˚C
ELECTRICAL CHARACTERISTICS (Ta = 25 ˚C)
Limits
Symbol
Gain
VSWR in
VSWR out
P1dB
IM3
Gain
Input VSWR
Output VSWR
Output power at 1 dB
compression point
Inter modulation level
Parameter
Conditions
Min.
Vd = 5 V
Id1 = 90 mA
Id2 = 180 mA
(RF off)
f = 24.5, 26.5 GHz
Single tone
f = 24.5, 26.5 GHz
Tow tone(10MHz off)
Pout = 20 dBm
13.0
2.2
2.2
23.0
(22.0)
Typ.
Max.
dB
-
-
dBm
dBc
Units
MITSUBISHI
ELECTRIC
as of July '98
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