Insulated Gate Bipolar Transistor
| Parameter Name | Attribute value |
| Maker | Motorola ( NXP ) |
| package instruction | CYLINDRICAL, O-PBCY-T3 |
| Reach Compliance Code | unknow |
| Other features | HIGH SPEED SWITCHING |
| Maximum collector current (IC) | 0.5 A |
| Collector-emitter maximum voltage | 600 V |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Gate emitter threshold voltage maximum | 6 V |
| Gate-emitter maximum voltage | 15 V |
| JEDEC-95 code | TO-226AE |
| JESD-30 code | O-PBCY-T3 |
| JESD-609 code | e0 |
| Number of components | 1 |
| Number of terminals | 3 |
| Maximum operating temperature | 150 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | ROUND |
| Package form | CYLINDRICAL |
| Polarity/channel type | N-CHANNEL |
| Maximum power dissipation(Abs) | 1 W |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | THROUGH-HOLE |
| Terminal location | BOTTOM |
| transistor applications | POWER CONTROL |
| Transistor component materials | SILICON |
| Nominal off time (toff) | 301 ns |
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