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STD2NK70ZT4

Description
MOSFET N-Ch 700 Volt 1.6Amp
CategoryDiscrete semiconductor    The transistor   
File Size425KB,16 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Environmental Compliance
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STD2NK70ZT4 Overview

MOSFET N-Ch 700 Volt 1.6Amp

STD2NK70ZT4 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Parts packaging codeTO-252AA
package instructionTO-252, DPAK-3
Contacts3
Reach Compliance Codenot_compliant
ECCN codeEAR99
Other featuresAVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)110 mJ
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage700 V
Maximum drain current (Abs) (ID)1.6 A
Maximum drain current (ID)1.6 A
Maximum drain-source on-resistance7 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-252AA
JESD-30 codeR-PSSO-G2
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)45 W
Maximum pulsed drain current (IDM)6.4 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn) - annealed
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
STD2NK70Z
STD2NK70Z-1
N-channel 700V - 6Ω - 1.6 A - DPAK/IPAK
Zener protected SuperMESH™ Power MOSFET
General features
Type
STD2NK70Z
STD2NK70Z-1
V
DSS
700V
700V
R
DS(on)
7Ω
7Ω
I
D
1.6A
1.6A
Pw
45W
45W
1
3
Extremely high dv/dt capability
ESD improved capability
100% avalanche tested
New high voltage benchmark
Gate charge minimized
DPAK
Description
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt
capability for the most demanding application.
Such series complements ST full range of high
voltage MOSFETs including revolutionary
MDmesh™ products.
Applications
bs
O
Switching application
et
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ro
P
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uc
d
s)
t(
so
schematic diagram
b
Internal
O
-
te
le
r
P
d
o
uc
s)
t(
3
2
1
IPAK
Order codes
Part number
STD2NK70Z
STD2NK70Z-1
Marking
D2NK70Z
D2NK70Z
Package
D²PAK
IPAK
Packaging
Tape & reel
Tube
July 2006
Rev 3
1/16
www.st.com
16
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