DS1250W-100 datasheet, PDF - EEWORLD Datasheet

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DS1250W-100: DescriptionNVRAM 3.3V 4096K NV SRAM; Categorystorage; File Size202KB，9 Pages; ManufacturerMaxim; Websitehttps://www.maximintegrated.com/en.html

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DS1250W-100 Overview

NVRAM 3.3V 4096K NV SRAM

DS1250W-100 Parametric

Parameter Name	Attribute value
Product Category	NVRAM
Manufacturer	Maxim
Package / Case	EDIP-32
Interface Type	Parallel
Memory Size	4 Mbit
Organization	512 k x 8
Data Bus Width	8 bit
Access Time	100 ns
Supply Voltage - Max	3.6 V
Supply Voltage - Min	3 V
Operating Supply Current	50 mA
Minimum Operating Temperature	- 40 C
Maximum Operating Temperature	+ 85 C
Packaging	Bulk
Height	9.4 mm
Length	43.69 mm
Mounting Style	Through Hole
Operating Supply Voltage	3.3 V
Factory Pack Quantity	11
Type	NVSRAM
Width	18.8 mm

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19-5648; Rev 12/10

DS1250W

3.3V 4096k Nonvolatile SRAM

www.maxim-ic.com

FEATURES



10 years minimum data retention in the

absence of external power

Data is automatically protected during power

loss

Replaces 512k x 8 volatile static RAM,

EEPROM or Flash memory

Unlimited write cycles

Low-power CMOS

Read and write access times of 100ns

Lithium energy source is electrically

disconnected to retain freshness until power is

applied for the first time

Optional industrial temperature range of -

40°C to +85°C, designated IND

JEDEC standard 32-pin DIP package

PowerCap Module (PCM) package

– Directly surface-mountable module

– Replaceable snap-on PowerCap provides

lithium backup battery

– Standardized pinout for all nonvolatile

SRAM products

– Detachment feature on PCM allows easy

removal using a regular screwdriver

PIN ASSIGNMENT

A18

A16

A14

A12

DQ0

DQ1

DQ2

GND

A15

A17

A13

A11

A10

DQ7

DQ6

DQ5

DQ4

DQ3

32-Pin Encapsulated Package

740-Mil Extended

A15

A16

DQ7

DQ6

DQ5

DQ4

DQ3

DQ2

DQ1

DQ0

GND

GND V

BAT

A18

A17

A14

A13

A12

A11

A10

34-Pin PowerCap Module (PCM)

(Uses DS9034PC+ or DS9034PCI+ PowerCap)

PIN DESCRIPTION

A0 - A18

DQ0 - DQ7

GND

1 of 11

- Address Inputs

- Data In/Data Out

- Chip Enable

- Write Enable

- Output Enable

- Power (+3.3V)

- Ground

- No Connect

DS1250W-100 Related Products

	DS1250W-100	DS1250W-150	DS1250WP-100IND	DS1250WP-150-C01
Description	NVRAM 3.3V 4096K NV SRAM	NVRAM 3.3V 4096K NV SRAM	NVRAM 3.3V 4096K NV SRAM	NVRAM 3.3V 4096K NV SRAM
Is it Rohs certified?	-	incompatible	incompatible	incompatible
Maker	-	Maxim	Maxim	Maxim
Reach Compliance Code	-	not_compliant	not_compliant	compliant
ECCN code	-	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A
Maximum access time	-	150 ns	100 ns	150 ns
JESD-30 code	-	R-XDMA-P32	R-XDMA-U34	R-XDMA-U34
JESD-609 code	-	e0	e0	e0
memory density	-	4194304 bit	4194304 bit	4194304 bit
Memory IC Type	-	NON-VOLATILE SRAM MODULE	NON-VOLATILE SRAM MODULE	NON-VOLATILE SRAM MODULE
memory width	-	8	8	8
Number of functions	-	1	1	1
Number of terminals	-	32	34	34
word count	-	524288 words	524288 words	524288 words
character code	-	512000	512000	512000
Operating mode	-	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	-	70 °C	85 °C	70 °C
organize	-	512KX8	512KX8	512KX8
Package body material	-	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
Package shape	-	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	-	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY
Parallel/Serial	-	PARALLEL	PARALLEL	PARALLEL
Peak Reflow Temperature (Celsius)	-	240	NOT SPECIFIED	NOT SPECIFIED
Certification status	-	Not Qualified	Not Qualified	Not Qualified
Maximum supply voltage (Vsup)	-	3.6 V	3.6 V	3.6 V
Minimum supply voltage (Vsup)	-	3 V	3 V	3 V
Nominal supply voltage (Vsup)	-	3.3 V	3.3 V	3.3 V
surface mount	-	NO	YES	YES
technology	-	CMOS	CMOS	CMOS
Temperature level	-	COMMERCIAL	INDUSTRIAL	COMMERCIAL
Terminal surface	-	Tin/Lead (Sn/Pb)	TIN LEAD	TIN LEAD
Terminal form	-	PIN/PEG	J INVERTED	J INVERTED
Terminal location	-	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED

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