DISCRETE SEMICONDUCTORS
DATA SHEET
PDTA124T series
PNP resistor-equipped transistors;
R1 = 22 kΩ, R2 = open
Product data sheet
Supersedes data of 2004 May 05
2004 Aug 04
NXP Semiconductors
Product data sheet
PNP resistor-equipped transistors;
R1 = 22 kΩ, R2 = open
FEATURES
•
Built-in bias resistors
•
Simplified circuit design
•
Reduction of component count
•
Reduced pick and place costs.
APPLICATIONS
•
General purpose switching and amplification
•
Inverter and interface circuits
•
Circuit driver.
DESCRIPTION
PDTA124T series
QUICK REFERENCE DATA
SYMBOL
V
CEO
I
O
R1
R2
PARAMETER
collector-emitter
voltage
output current (DC)
bias resistor
open
TYP.
−
−
22
−
MAX.
−50
−100
−
−
UNIT
V
mA
kΩ
−
PNP resistor-equipped transistor (see “Simplified outline,
symbol and pinning” for package details).
PRODUCT OVERVIEW
PACKAGE
TYPE NUMBER
PHILIPS
PDTA124TE
PDTA124TEF
PDTA124TK
PDTA124TM
PDTA124TS
PDTA124TT
PDTA124TU
Note
1. * = p: Made in Hong Kong.
* = t: Made in Malaysia.
* = W: Made in China.
SOT416
SOT490
SOT346
SOT883
SOT54 (TO-92)
SOT23
SOT323
EIAJ
SC-75
SC-89
SC-59
SC-101
SC-43
−
SC-70
3R
24
59
DJ
TA124T
*AE
(1)
*7B
(1)
PDTC124TE
PDTC124TEF
PDTC124TK
PDTC124TM
PDTC124TS
PDTC124TT
PDTC124TU
MARKING CODE
NPN COMPLEMENT
2004 Aug 04
2
NXP Semiconductors
Product data sheet
PNP resistor-equipped transistors;
R1 = 22 kΩ, R2 = open
SIMPLIFIED OUTLINE, SYMBOL AND PINNING
PDTA124T series
PINNING
TYPE NUMBER
PDTA124TS
SIMPLIFIED OUTLINE AND SYMBOL
PIN
1
2
handbook, halfpage
DESCRIPTION
base
collector
emitter
3
2
R1
1
3
MAM352
1
2
3
PDTA124TE
PDTA124TEF
PDTA124TK
PDTA124TT
PDTA124TU
1
Top view
2
MDB272
1
2
handbook, halfpage
base
emitter
collector
3
R1
1
3
3
2
PDTA124TM
handbook, halfpage
1
2
3
R1
3
1
2
Bottom view
MDB268
base
emitter
collector
3
2
1
2004 Aug 04
3
NXP Semiconductors
Product data sheet
PNP resistor-equipped transistors;
R1 = 22 kΩ, R2 = open
ORDERING INFORMATION
TYPE
NUMBER
PDTA124TE
PDTA124TEF
PDTA124TK
PDTA124TM
PDTA124TS
PDTA124TT
PDTA124TU
PACKAGE
NAME
−
−
−
−
−
−
−
DESCRIPTION
plastic surface mounted package; 3 leads
plastic surface mounted package; 3 leads
plastic surface mounted package; 3 leads
leadless ultra small plastic package; 3 solder lands; body
1.0
×
0.6
×
0.5 mm
PDTA124T series
VERSION
SOT416
SOT490
SOT346
SOT883
SOT54
SOT23
SOT323
plastic single-ended leaded (through hole) package; 3 leads
plastic surface mounted package; 3 leads
plastic surface mounted package; 3 leads
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
O
I
CM
P
tot
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
output current (DC)
peak collector current
total power dissipation
SOT23
SOT54
SOT323
SOT346
SOT416
SOT490
SOT883
T
stg
T
j
T
amb
Notes
1. Refer to standard mounting conditions.
2. Reflow soldering is the only recommended soldering method.
3. Refer to SOT883 standard mounting conditions; FR4 with 60
μm
copper strip line.
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C
note 1
note 1
note 1
note 1
note 1
notes 1 and 2
notes 2 and 3
−
−
−
−
−
−
−
−65
−
−65
250
500
200
250
150
250
250
+150
150
+150
mW
mW
mW
mW
mW
mW
mW
°C
°C
°C
CONDITIONS
open emitter
open base
open collector
−
−
−
−
−
MIN.
MAX.
−50
−50
−5
−100
−100
V
V
V
mA
mA
UNIT
2004 Aug 04
4
NXP Semiconductors
Product data sheet
PNP resistor-equipped transistors;
R1 = 22 kΩ, R2 = open
THERMAL CHARACTERISTICS
SYMBOL
R
th(j-a)
SOT23
SOT54
SOT323
SOT346
SOT416
SOT490
SOT883
Notes
1. Refer to standard mounting conditions.
2. Reflow soldering is the only recommended soldering method.
3. Refer to SOT883 standard mounting conditions; FR4 with 60
μm
copper strip line.
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
CEO
PARAMETER
collector-base cut-off current
collector-emitter cut-off current
CONDITIONS
V
CB
=
−50
V; I
E
= 0 A
V
CE
=
−30
V; I
B
= 0 A
V
CE
=
−30
V; I
B
= 0 A;
T
j
= 150
°C
I
EBO
h
FE
V
CEsat
R1
C
c
emitter-base cut-off current
DC current gain
input resistor
collector capacitance
I
E
= i
e
= 0 A; V
CB
=
−10
V;
f = 1 MHz
V
EB
=
−5
V; I
C
= 0 A
V
CE
=
−5
V; I
C
=
−1
mA
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
in free air
note 1
note 1
note 1
note 1
note 1
notes 1 and 2
notes 2 and 3
PDTA124T series
VALUE
500
250
625
500
833
500
500
UNIT
K/W
K/W
K/W
K/W
K/W
K/W
K/W
MIN.
−
−
−
−
100
−
15.4
−
TYP.
−
−
−
−
−
−
22
−
MAX.
−100
−1
−50
−100
−
−150
28.6
3
UNIT
nA
μA
μA
nA
mV
kΩ
pF
collector-emitter saturation voltage I
C
=
−10
mA; I
B
=
−0.5
mA
2004 Aug 04
5
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