HAT2027R
Silicon N Channel Power MOS FET
High Speed Power Switching
ADE-208-458 E (Z)
6th. Edition
February 1999
Features
•
•
•
•
Low on-resistance
Capable of 2.5 V gate drive
Low drive current
High density mounting
Outline
SOP–8
8
5
7 6
3
1 2
7 8
D D
5 6
D D
4
2
G
4
G
S1
S3
1, 3
Source
2, 4
Gate
5, 6, 7, 8 Drain
MOS1
MOS2
HAT2027R
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Channel dissipation
Channel dissipation
Channel temperature
Storage temperature
Note:
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)Note1
I
DR
Pch
Note2
Pch
Note3
Tch
Tstg
Ratings
20
±
12
7
56
7
2
3
150
– 55 to + 150
Unit
V
V
A
A
A
W
W
°C
°C
1. PW
≤
10µs, duty cycle
≤
1 %
2. 1 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s
3. 2 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min
20
±
12
—
—
0.5
—
—
9
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
0.03
0.038
14
720
450
185
28
145
100
125
0.9
60
Max
—
—
±
10
10
1.5
0.038
0.053
—
—
—
—
—
—
—
—
1.4
—
Unit
V
V
µA
µA
V
Ω
Ω
S
pF
pF
pF
ns
ns
ns
ns
V
ns
IF = 7 A, V
GS
= 0
Note4
IF = 7 A, V
GS
= 0
diF/ dt = 20 A/µs
Test Conditions
I
D
= 10 mA, V
GS
= 0
I
G
=
±
100
µA,
V
DS
= 0
V
GS
=
±
10 V, V
DS
= 0
V
DS
= 20 V, V
GS
= 0
V
DS
= 10 V, I
D
= 1 mA
I
D
= 4 A, V
GS
= 4 V
Note4
I
D
= 4 A, V
GS
= 2.5 V
Note4
I
D
= 4 A, V
DS
= 10 V
Note4
V
DS
= 10 V
V
GS
= 0
f = 1MHz
V
GS
= 4 V, I
D
= 4 A
V
DD
≅
10 V
Drain to source breakdown voltage V
(BR)DSS
Gate to source breakdown voltage V
(BR)GSS
Gate to source leak current
Zero gate voltege drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse
recovery time
Note:
4. Pulse test
I
GSS
I
DSS
V
GS(off)
R
DS(on)
R
DS(on)
|y
fs
|
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
2
HAT2027R
Main Characteristics
Power vs. Temperature Derating
4.0
Pch (W)
I
D
(A)
Test Condition :
When using the glass epoxy board
(FR4 40x40x1.6 mm), PW < 10 s
3.0
100
30
10
3
Maximum Safe Operation Area
10 µs
100 µs
DC
PW
Op
e
ra
tio
n
1m
=
s
10
Channel Dissipation
Drain Current
ms
2
iv
Dr
2.0
1
Dr
1
(P
W
1.0
ive
Op
er
Operation in
0.3 this area is
limited by R
DS(on)
0.1
0.03
Ta = 25 °C
1 shot Pulse
<
Note
10
5
s)
e
io
at
er
Op
n
at
ion
0
50
100
150
Ta (°C)
200
Ambient Temperature
0.01
0.1 0.3
1
3
10
30
100
Drain to Source Voltage V
DS
(V)
Note 5 :
When using the glass epoxy board
(FR4 40x40x1.6 mm)
Typical Output Characteristics
50
10V
6V
5V
4.5 V
Pulse Test
(A)
4V
3.5 V
30
3V
20
2.5 V
10
2V
V
GS
= 1.5 V
0
2
4
6
Drain to Source Voltage
8
V
DS
(V)
10
0
50
Typical Transfer Characteristics
V
DS
= 10 V
Pulse Test
–25°C
30
25°C
Tc = 75°C
I
D
(A)
40
40
Drain Current
Drain Current
I
D
20
10
1
2
3
Gate to Source Voltage
5
4
V
GS
(V)
3
HAT2027R
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
V
DS(on)
(V)
Static Drain to Source on State Resistance
vs. Drain Current
Drain to Source On State Resistance
R
DS(on)
(
Ω
)
0.5
0.5
Pulse Test
Pulse Test
0.2
0.1
0.4
Drain to Source Voltage
0.3
0.05
V
GS
= 2.5 V
4V
0.2
I
D
=5A
0.1
2A
1A
2
4
6
Gate to Source Voltage
8
V
GS
(V)
10
0.02
0.01
0.005
0
0.2
0.5
1
2
Drain Current
10
I
D
(A)
5
20
Static Drain to Source on State Resistance
R
DS(on)
(
Ω
)
Pulse Test
0.08
I
D
= 1 A, 2 A, 5 A
0.06
V
GS
= 2.5 V
0.04
1 A, 2 A, 5 A
0.02
0
–40
4V
Forward Transfer Admittance |yfs| (S)
Static Drain to Source on State Resistance
vs. Temperature
0.10
50
Forward Transfer Admittance vs.
Drain Current
Tc = –25 °C
20
10
5
2
1
0.5
0.2
V
DS
= 10 V
Pulse Test
0.5
1
2
5
10
20
Drain Current I
D
(A)
25 °C
75 °C
0
40
80
120
160
Case Temperature Tc (°C)
4
HAT2027R
Body–Drain Diode Reverse
Recovery Time
10000
3000
1000
300
Crss
100
30
10
0
4
8
12
16
20
Drain to Source Voltage V
DS
(V)
Typical Capacitance vs.
Drain to Source Voltage
V
GS
= 0
f = 1 MHz
500
Reverse Recovery Time trr (ns)
200
100
50
Capacitance C (pF)
Ciss
Coss
20
10
di/dt = 20 A/µs
V
GS
= 0, Ta = 25°C
5
0.1 0.2
0.5
1
2
5
10
Reverse Drain Current I
DR
(A)
Dynamic Input Characteristics
V
DS
(V)
I
D
= 7 A
40
V
DD
= 5 V
10 V
20 V
V
DS
V
GS
V
DD
= 20 V
10 V
5V
4
8
12
16
Gate Charge Qg (nc)
8
V
GS
(V)
50
10
50
Reverse Drain Current I
DR
(A)
Reverse Drain Current vs.
Souece to Drain Voltage
Pulse Test
40
V
GS
= 5 V
0, –5 V
20
Drain to Source Voltage
30
6
Gate to Source Voltage
30
20
4
10
2
0
20
10
0
0
0.4
0.8
1.2
1.6
2.0
Source to Drain Voltage
V
SD
(V)
5
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