MBRB16H60
www.vishay.com
Vishay General Semiconductor
Schottky Barrier Rectifier
High Barrier Technology for Improved High Temperature Performance
FEATURES
TO-263AB
K
2
1
PIN 1
PIN 2
K
HEATSINK
Power pack
Guardring for overvoltage protection
Low power loss, high efficiency
Low forward voltage drop
Low leakage current
High forward surge capability
High frequency operation
Meets MSL level 1, per J-STD-020, LF maximum peak
of 245 °C
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHE3_A
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
•
•
•
•
•
•
•
•
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
V
F
I
R
T
J
max.
Package
Circuit configuration
16 A
60 V
150 A
0.62 V
100 μA
175 °C
TO-263AB
Single
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of switching
mode power supplies, freewheeling diodes, DC/DC
converters, and polarity protection application.
MECHANICAL DATA
Case:
TO-263AB
Molding compound meets UL 94 V-0 flammability rating
Base P/NHE3_X - RoHS-compliant, AEC-Q101 qualified
(“_X” denotes revision code, e.g. A, B, ...)
Terminals:
matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
HE3 suffix meets JESD 201 class 2 whisker test
Polarity:
as marked
Mounting Torque:
10 in-lbs maximum
per
MAXIMUM RATINGS
(T
C
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Working peak reverse voltage
Maximum DC blocking voltage
Maximum average forward rectified current (fig. 1)
Non-repetitive avalanche energy
at 25 °C, I
AS
= 4 A, L = 10 mH
Peak forward surge current 8.3 ms single half sine-wave superimposed
on rated load
Peak repetitive reverse surge current at t
p
= 2.0 μs, 1 kHz
Peak non-repetitive reverse energy (8/20 μs waveform)
Electrostatic discharge capacitor voltage
Human body model: C = 100 pF, R = 1.5 kΩ
Voltage rate of change (rated V
R
)
Operating junction and storage temperature range
Isolation voltage from terminal to heatsink t = 1 min
SYMBOL
V
RRM
V
RWM
V
DC
I
F(AV)
E
AS
I
FSM
I
RRM
E
RSM
V
C
dV/dt
T
J
, T
STG
V
AC
MBRB16H60
60
60
60
16
80
150
0.5
20
25
10 000
-65 to +175
1500
mJ
kV
V/μs
°C
V
A
mJ
A
V
UNIT
Revision: 08-Jun-17
Document Number: 88784
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
MBRB16H60
www.vishay.com
Vishay General Semiconductor
MBRB16H60
TYP.
-
0.58
-
4.0
MAX.
0.73
0.62
100
20
ELECTRICAL CHARACTERISTICS
(T
C
= 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
I
F
= 16 A
I
F
= 16 A
Rated V
R
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
UNIT
Maximum instantaneous forward voltage
V
F (1)
I
R (2)
V
μA
mA
Maximum reverse current
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: pulse width
≤
40 ms
THERMAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance, junction to case
SYMBOL
R
θJC
MBRB16H60
1.5
UNIT
°C/W
ORDERING INFORMATION
(Example)
PACKAGE
TO-263AB
TO-263AB
PREFERRED P/N
MBRB16H60HE3_A/P
(1)
MBRB16H60HE3_A/I
(1)
UNIT WEIGHT (g)
1.33
1.33
PACKAGE CODE
P
I
BASE QUANTITY
50/tube
800/reel
DELIVERY MODE
Tube
Tape and reel
Note
(1)
AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
20
150
Peak Forward Surge Current (A)
T
J
= T
J
Max.
8.3 ms Single Half Sine-Wave
125
100
75
50
25
0
Average Forward Current (A)
15
10
5
0
0
25
50
75
100
125
150
175
1
10
100
Case Temperature (°C)
Number
of Cycles at 60 Hz
Fig. 1 - Forward Current Derating Curve
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Revision: 08-Jun-17
Document Number: 88784
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
MBRB16H60
www.vishay.com
Vishay General Semiconductor
10 000
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
100
Instantaneous Forward Current (A)
10
T
J
= 25 °C
1
T
J
= 125 °C
0.1
Junction Capacitance (pF)
T
J
= 150 °C
1000
0.01
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
100
0.1
1
10
100
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 5 - Typical Junction Capacitance
Instantaneous Reverse LeakageCurrent (mA)
100
10
10
T
J
= 150 °C
T
J
= 125 °C
1
Transient Thermal Impedance (°C/W)
0.1
1
0.01
0.001
T
J
= 25 °C
0.0001
0
20
40
60
80
100
0.1
0.01
0.1
1
10
Percent of Rated Peak Reverse Voltage (%)
t - Pulse Duration (s)
Fig. 4 - Typical Reverse Characteristics
Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
D
2
PAK (TO-263AB)
0.411 (10.45)
0.380 (9.65)
0.245 (6.22)
MIN.
K
0.360 (9.14)
0.320 (8.13)
1
K
2
0.055 (1.40)
0.047 (1.19)
0.190 (4.83)
0.160 (4.06)
0.055 (1.40)
0.045 (1.14)
Mounting Pad Layout
0.42 (10.66) min.
0.33 (8.38) min.
0.624 (15.85)
0.591 (15.00)
0.670 (17.02)
0.591 (15.00)
0 to 0.01 (0 to 0.254)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.15 (3.81) min.
0.08 (2.032) MIN.
0.105 (2.67)
0.095 (2.41)
0.037 (0.940)
0.027 (0.686)
0.105 (2.67)
0.095 (2.41)
0.205 (5.20)
0.195 (4.95)
0.140 (3.56)
0.110 (2.79)
Revision: 08-Jun-17
Document Number: 88784
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
1
Document Number: 91000