Freescale Semiconductor
Technical Data
Document Number: AFT21S220W02S
Rev. 0, 2/2014
RF Power LDMOS Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
These 50 W RF power LDMOS transistors are designed for cellular base
station applications requiring very wide instantaneous bandwidth capability
covering the frequency range of 2110 to 2170 MHz.
Typical Single--Carrier W--CDMA Performance: V
DD
= 28 Vdc,
I
DQ
= 1200 mA, P
out
= 50 W Avg., Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF.
Frequency
2110 MHz
2140 MHz
2170 MHz
G
ps
(dB)
18.9
19.1
19.2
D
(%)
29.8
29.3
28.9
Output PAR
(dB)
7.2
7.1
7.0
ACPR
(dBc)
–34.0
–34.0
–34.0
IRL
(dB)
–18
–25
–17
AFT21S220W02SR3
AFT21S220W02GSR3
2110–2170 MHz, 50 W AVG., 28 V
AIRFAST RF POWER LDMOS
TRANSISTORS
Features
Designed for Wide Instantaneous Bandwidth Applications
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
Able to Withstand Extremely High Output VSWR and Broadband Operating
Conditions
Optimized for Doherty Applications
In Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13--inch Reel.
NI-
-780S-
-2L
AFT21S220W02SR3
NI-
-780GS-
-2L
AFT21S220W02GSR3
RF
in
/V
GS
2
1 RF
out
/V
DS
(Top View)
Figure 1. Pin Connections
Freescale Semiconductor, Inc., 2014. All rights reserved.
AFT21S220W02SR3 AFT21S220W02GSR3
1
RF Device Data
Freescale Semiconductor, Inc.
Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Gate--Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature Range
Operating Junction Temperature Range
(1,2)
CW Operation @ T
C
= 25C
Derate above 25C
Symbol
V
DSS
V
GS
V
DD
T
stg
T
C
T
J
CW
Value
–0.5, +65
–6.0, +10
32, +0
–65 to +150
–40 to +125
–40 to +225
92
0.41
Unit
Vdc
Vdc
Vdc
C
C
C
W
W/C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 91C, 50 W CW, 28 Vdc, I
DQ
= 1200 mA, 2140 MHz
Symbol
R
JC
Value
(2,3)
0.56
Unit
C/W
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
Class
2
B
IV
Table 4. Electrical Characteristics
(T
A
= 25C unless otherwise noted)
Characteristic
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 65 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate--Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 300
Adc)
Gate Quiescent Voltage
(V
DD
= 28 Vdc, I
D
= 1200 mAdc, Measured in Functional Test)
Drain--Source On--Voltage
(V
GS
= 10 Vdc, I
D
= 3.0 Adc)
V
GS(th)
V
GS(Q)
V
DS(on)
0.8
1.4
0.1
1.2
1.8
0.15
1.6
2.2
0.3
Vdc
Vdc
Vdc
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
5
1
Adc
Adc
Adc
Symbol
Min
Typ
Max
Unit
Functional Tests
(4,5)
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 1200 mA, P
out
= 50 W Avg., f = 2140 MHz,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @
5
MHz Offset.
Power Gain
Drain Efficiency
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Input Return Loss
G
ps
D
PAR
ACPR
IRL
18.1
26.0
6.6
—
—
19.1
29.3
7.1
–34.0
–25
21.1
—
—
–32.0
–12
dB
%
dB
dBc
dB
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf. Select
Documentation/Application Notes -- AN1955.
4. Part internally matched both on input and output.
5. Measurements made with device in straight lead configuration before any lead forming operation is applied. Lead forming is used for gull
wing (GS) parts.
(continued)
AFT21S220W02SR3 AFT21S220W02GSR3
2
RF Device Data
Freescale Semiconductor, Inc.
Table 4. Electrical Characteristics
(T
A
= 25C unless otherwise noted)
(continued)
Characteristic
VSWR 10:1 at 30 Vdc, 250 W Pulse Output Power
(3 dB Input Overdrive from 180 W Pulse Rated Power)
Symbol
Min
Typ
Max
Unit
Load Mismatch
(In Freescale Test Fixture, 50 ohm system) I
DQ
= 1200 mA, f = 2140 MHz, 120
sec
Pulse Width, 10% Duty Cycle
No Device Degradation
Typical Performance
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 1200 mA, 2110–2170 MHz Bandwidth
P
out
@ 1 dB Compression Point, 120
sec
Pulse Width, 10% Duty
Cycle
AM/PM
(Maximum value measured at the P3dB compression point across
the 2110–2170 MHz bandwidth)
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
Gain Flatness in 60 MHz Bandwidth @ P
out
= 50 W Avg.
Gain Variation over Temperature @ 166 W CW
(–30C to +85C)
Output Power Variation over Temperature @ 166 W CW
(–30C to +85C)
(1)
P1dB
—
—
209
–18
—
—
W
VBW
res
G
F
G
P1dB
—
—
—
—
80
0.3
0.02
0.01
—
—
—
—
MHz
dB
dB/C
dB/C
1. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
AFT21S220W02SR3 AFT21S220W02GSR3
RF Device Data
Freescale Semiconductor, Inc.
3
C9
C17
V
DD
C10
C7
V
GG
C4
C3
C1*
C2
C11*
CUT OUT AREA
R1
C15*
C16*
C5
R2
C6
C8
V
GG
C12*
C13
C14
D57394
*C1, C11, C12, C15 and C16 are mounted vertically.
C18
AFT21S220W02S
Rev. 2
Figure 2. AFT21S220W02SR3 Test Circuit Component Layout
Table 5. AFT21S220W02SR3 Test Circuit Component Designations and Values
Part
C1, C4, C6, C11, C12, C16
C2
C3, C5
C7, C8, C9, C10, C13, C14
C15
C17, C18
R1, R2
PCB
Description
6.8 pF Chip Capacitors
0.8 pF Chip Capacitor
0.1
F
Chip Capacitors
10
F
Chip Capacitors
2.2 pF Chip Capacitor
470
F,
63 V Electrolytic Capacitors
4.75
,
1/4 W Chip Resistors
Rogers RO4350B, 0.020,
r
= 3.66
Part Number
ATC100B6R8CT500XT
ATC100B0R8BT500XT
C1206C104K1RACTU
GRM32ER61H106KA12L
ATC100B2R2JT500XT
MCGPR63V477M13X26-RH
CRCW12064R75FNEA
D57394
Manufacturer
ATC
ATC
Kemet
Murata
ATC
Multicomp
Vishay
MTL
AFT21S220W02SR3 AFT21S220W02GSR3
4
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS
D
, DRAIN
EFFICIENCY (%)
20
19.8
19.6
G
ps
, POWER GAIN (dB)
19.4
19.2
19
18.8
18.6
18.4
18.2
18
2060
2080
ACPR
IRL
2100
2120
2140
2160
2180
2200
PARC
D
32
V
DD
= 28 Vdc, P
out
= 50 W (Avg.)
I
DQ
= 1200 mA, Single--Carrier W--CDMA
31
3.84 MHz Channel Bandwidth
30
29
G
ps
28
--32.5
--33
--33.5
--34
--34.5
--35
2220
ACPR (dBc)
--5
--10
--15
--20
--25
--30
IRL, INPUT RETURN LOSS (dB)
Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF
--2.4
--2.8
--3
--3.2
--3.4
PARC (dB)
--2.6
f, FREQUENCY (MHz)
Figure 3. Single-
-Carrier Output Peak- -Average Ratio Compression
-to-
(PARC) Broadband Performance @ P
out
= 50 Watts Avg.
0
IMD, INTERMODULATION DISTORTION (dBc)
V
DD
= 28 Vdc, P
out
= 184 W (PEP)
I
DQ
= 1200 mA, Two--Tone Measurements
--15
(f1 + f2)/2 = Center Frequency of 2140 MHz
IM3--U
--30
IM5--U
--45
--60
--75
IM7--L
IM7--U
IM3--L
IM5--L
1
10
TWO--TONE SPACING (MHz)
100
200 300
Figure 4. Intermodulation Distortion Products
versus Two-
-Tone Spacing
19.6
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
19.4
G
ps
, POWER GAIN (dB)
19.2
19
18.8
18.6
18.4
1
0
--1
--2
--3
--4
--5
--3 dB = 56 W
--1 dB = 31 W
45
40
35
30
ACPR
PARC
25
20
15
30
40
50
60
70
P
out
, OUTPUT POWER (WATTS)
--15
--20
--25
--30
--35
--40
--45
ACPR (dBc)
G
ps
--2 dB = 42 W
D
20
Figure 5. Output Peak- -Average Ratio
-to-
Compression (PARC) versus Output Power
AFT21S220W02SR3 AFT21S220W02GSR3
RF Device Data
Freescale Semiconductor, Inc.
5
D
DRAIN EFFICIENCY (%)
V
DD
= 28 Vdc, I
DQ
= 1200 mA, f = 2140 MHz
Single--Carrier W--CDMA 3.84 MHz Channel Bandwidth
Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF
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