NTD6600NT4 datasheet, PDF - EEWORLD Datasheet

NTD6600NT4: DescriptionMOSFET 100V 12A N-Channel; CategoryDiscrete semiconductor The transistor; File Size61KB，6 Pages; ManufacturerON Semiconductor; Websitehttp://www.onsemi.cn

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MOSFET 100V 12A N-Channel

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
package instruction	CASE 369C-01, DPAK-3
Contacts	3
Manufacturer packaging code	CASE 369C-01
Reach Compliance Code	not_compliant
ECCN code	EAR99
Avalanche Energy Efficiency Rating (Eas)	72 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	100 V
Maximum drain current (ID)	12 A
Maximum drain-source on-resistance	0.146 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSSO-G2
JESD-609 code	e0
Humidity sensitivity level	1
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	235
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	44 A
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal location	SINGLE
Maximum time at peak reflow temperature	30
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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