2N6071A/B Series
Preferred Device
Sensitive Gate Triacs
Silicon Bidirectional Thyristors
Designed primarily for full‐wave AC control applications, such as
light dimmers, motor controls, heating controls and power supplies; or
wherever full‐wave silicon gate controlled solid‐state devices are
needed. Triac type thyristors switch from a blocking to a conducting
state for either polarity of applied anode voltage with positive or
negative gate triggering.
Features
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TRIACS
4.0 A RMS, 200 - 600 V
•
Sensitive Gate Triggering Uniquely Compatible for Direct Coupling
•
•
•
•
•
to TTL, HTL, CMOS and Operational Amplifier Integrated Circuit
Logic Functions
Gate Triggering: 4 Mode - 2N6071A, B; 2N6073A, B; 2N6075A, B
Blocking Voltages to 600 V
All Diffused and Glass Passivated Junctions for Greater Parameter
Uniformity and Stability
Small, Rugged, Thermopad Construction for Low Thermal
Resistance, High Heat Dissipation and Durability
Device Marking: Device Type, e.g., 2N6071A, Date Code
MT2
G
MT1
REAR VIEW
SHOW TAB
3
TO-225
CASE 077
STYLE 5
2 1
MARKING DIAGRAM
YWW
2N
607xyG
= 1, 3, 5
= A, B
= Year
= Work Week
= Pb-Free Package
1. Cathode
2. Anode
3. Gate
x
y
Y
WW
G
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 7 of this data sheet.
Preferred
devices are recommended choices for future use
and best overall value.
*For additional information on our Pb-Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2008
1
March, 2008 - Rev. 8
Publication Order Number:
2N6071/D
2N6071A/B Series
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Rating
*Peak Repetitive Off‐State Voltage (Note 1)
(T
J
=
*40
to 110°C, Sine Wave, 50 to 60 Hz, Gate Open)
2N6071A,B
2N6073A,B
2N6075A,B
*On‐State RMS Current (T
C
= 85°C) Full Cycle Sine Wave 50 to 60 Hz
*Peak Non-repetitive Surge Current (One Full cycle, 60 Hz, T
J
= +110°C)
Circuit Fusing Considerations (t = 8.3 ms)
*Peak Gate Power (Pulse Width
≤
1.0
ms,
T
C
= 85°C)
*Average Gate Power (t = 8.3 ms, T
C
= 85°C)
*Peak Gate Voltage (Pulse Width
≤
1.0
ms,
T
C
= 85°C)
*Operating Junction Temperature Range
*Storage Temperature Range
Mounting Torque (6‐32 Screw) (Note 2)
Symbol
V
DRM,
V
RRM
200
400
600
I
T(RMS)
I
TSM
I
2
t
P
GM
P
G(AV)
V
GM
T
J
T
stg
-
4.0
30
3.7
10
0.5
5.0
-40 to +110
-40 to +150
8.0
A
A
A
2
s
W
W
V
°C
°C
in. lb.
Value
Unit
V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. V
DRM
and V
RRM
for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such
that the voltage ratings of the devices are exceeded.
2. Torque rating applies with use of a compression washer. Mounting torque in excess of 6 in. lb. does not appreciably lower case‐to‐sink thermal
resistance. Main terminal 2 and heatsink contact pad are common.
THERMAL CHARACTERISTICS
Characteristic
*Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds
*Indicates JEDEC Registered Data.
Symbol
R
qJC
R
qJA
T
L
Max
3.5
75
260
Unit
°C/W
°C/W
°C
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2N6071A/B Series
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic
OFF CHARACTERISTICS
*Peak Repetitive Blocking Current
(V
D
= V
DRM
= V
RRM;
Gate Open)
ON CHARACTERISTICS
*Peak On‐State Voltage (Note 3) (I
TM
=
"6.0
A Peak)
*Gate Trigger Voltage (Continuous DC), All Quadrants
(Main Terminal Voltage = 12 Vdc, R
L
= 100
W,
T
J
= -40°C)
Gate Non-Trigger Voltage, All Quadrants
(Main Terminal Voltage = 12 Vdc, R
L
= 100
W,
T
J
= 110°C)
*Holding Current
(Main Terminal Voltage = 12 Vdc, Gate Open, Initiating Current =
"1
Adc)
T
J
= -40°C
T
J
= 25°C
Turn‐On Time (I
TM
= 14 Adc, I
GT
= 100 mAdc)
V
TM
V
GT
-
V
GD
0.2
I
H
-
-
t
gt
-
-
-
1.5
30
15
-
ms
-
-
mA
1.4
2.5
V
-
-
2
V
V
T
J
= 25°C
T
J
= 110°C
I
DRM,
I
RRM
-
-
-
-
10
2
mA
mA
Symbol
Min
Typ
Max
Unit
QUADRANT
(Maximum Value)
Type
Gate Trigger Current (Continuous DC)
(Main Terminal Voltage = 12 Vdc, R
L
= 100
W)
2N6071A
2N6073A
2N6075A
2N6071B
2N6073B
2N6075B
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Commutation Voltage
@ V
DRM
, T
J
= 85°C, Gate Open, I
TM
= 5.7 A, Exponential Waveform,
Commutating di/dt = 2.0 A/ms
3. Pulse Test: Pulse Width
≤
2.0 ms, Duty Cycle
≤
2%.
*Indicates JEDEC Registered Data.
dv/dt(c)
-
5
-
V/ms
I
GT
@
T
J
+25°C
-40°C
+25°C
-40°C
I
mA
5
20
3
15
II
mA
5
20
3
15
III
mA
5
20
3
15
IV
mA
10
30
5
20
SAMPLE APPLICATION:
TTL‐SENSITIVE GATE 4 AMPERE TRIAC
TRIGGERS IN MODES II AND III
14
MC7400
4
7
V
EE
= 5.0 V
+
2N6071A
LOAD
115 VAC
60 Hz
0V
-V
EE
510
W
Trigger devices are recommended for gating on Triacs. They provide:
1. Consistent predictable turn‐on points.
2. Simplified circuitry.
3. Fast turn‐on time for cooler, more efficient and reliable operation.
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2N6071A/B Series
Voltage Current Characteristic of Triacs
(Bidirectional Device)
+ Current
Quadrant 1
MainTerminal 2 +
Symbol
V
DRM
I
DRM
V
RRM
I
RRM
V
TM
I
H
Parameter
Peak Repetitive Forward Off State Voltage
Peak Forward Blocking Current
Peak Repetitive Reverse Off State Voltage
Peak Reverse Blocking Current
Maximum On State Voltage
Holding Current
Quadrant 3
MainTerminal 2 -
I
H
V
TM
I
RRM
at V
RRM
on state
I
H
V
TM
off state
+ Voltage
I
DRM
at V
DRM
Quadrant Definitions for a Triac
MT2 POSITIVE
(Positive Half Cycle)
+
(+) MT2
(+) MT2
Quadrant II
(-) I
GT
GATE
MT1
REF
(+) I
GT
GATE
MT1
REF
Quadrant I
I
GT
-
(-) MT2
(-) MT2
+ I
GT
Quadrant III
(-) I
GT
GATE
MT1
REF
(+) I
GT
GATE
MT1
REF
Quadrant IV
-
MT2 NEGATIVE
(Negative Half Cycle)
All polarities are referenced to MT1.
With in-phase signals (using standard AC lines) quadrants I and III are used.
SENSITIVE GATE LOGIC REFERENCE
IC Logic Functions
TTL
HTL
CMOS (NAND)
CMOS (Buffer)
Operational Amplifier
Zero Voltage Switch
2N6071A Series
2N6071A Series
2N6071A Series
2N6071B Series
2N6071B Series
2N6071B Series
2N6071A Series
Firing Quadrant
I
II
2N6071A Series
2N6071A Series
III
2N6071A Series
2N6071A Series
IV
2N6071B Series
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4
2N6071A/B Series
110
110
α
= 30°
60°
TC , CASE TEMPERATURE (
°
C)
TC , CASE TEMPERATURE (
°
C)
90°
100
100
α
= 30°
60°
90
90°
120°
180°
dc
80
α
70
α
= CONDUCTION ANGLE
0
1.0
2.0
3.0
I
T(AV)
, AVERAGE ON‐STATE CURRENT (AMP)
4.0
a
90
120°
180°
80
a
70
a
dc
α
= CONDUCTION ANGLE
0
1.0
2.0
3.0
I
T(RMS)
, RMS ON‐STATE CURRENT (AMP)
4.0
Figure 1. Average Current Derating
8.0
a
P(AV) , AVERAGE POWER (WATTS)
6.0
a
α
= CONDUCTION ANGLE
60°
4.0
α
= 30°
90°
180°
120°
dc
P(AV) , AVERAGE POWER (WATTS)
6.0
a
8.0
Figure 2. RMS Current Derating
a
dc
α
= 180°
120°
α
= CONDUCTION ANGLE
4.0
2.0
2.0
90°
0
30°
60°
0
0
1.0
2.0
3.0
I
T(AV)
, AVERAGE ON‐STATE CURRENT (AMP)
4.0
0
2.0
3.0
I
T(RMS)
, RMS ON‐STATE CURRENT (AMP)
1.0
4.0
Figure 3. Power Dissipation
V GT , GATE TRIGGER VOLTAGE (NORMALIZED)
I GT , GATE TRIGGER CURRENT (NORMALIZED)
3.0
2.0
OFF‐STATE VOLTAGE = 12 Vdc
ALL MODES
3.0
2.0
Figure 4. Power Dissipation
OFF‐STATE VOLTAGE = 12 Vdc
ALL MODES
1.0
0.7
0.5
1.0
0.7
0.5
0.3
-60
-40
-20
0
20
40
60
80
100
T
J
, JUNCTION TEMPERATURE (°C)
120
140
0.3
-60
-40
-20
0
20
40
60
80
100
T
J
, JUNCTION TEMPERATURE (°C)
120
140
Figure 5. Typical Gate-Trigger Voltage
Figure 6. Typical Gate-Trigger Current
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