Philips Semiconductors
Product specification
Inverting Schmitt trigger
FEATURES
•
Symmetrical output impedance
•
High noise immunity
•
ESD protection:
– HBM EIA/JESD22-A114-B exceeds 2000 V
– MM EIA/JESD22-A115-A exceeds 200 V
– CDM EIA/JESD22-C101 exceeds 500 V.
•
Low power dissipation
•
Balanced propagation delays
•
Multiple package options
•
Specified from
−40 °C
to +85
°C
and
−40 °C
to +125
°C.
QUICK REFERENCE DATA
GND = 0 V; T
amb
= 25
°C;
t
r
= t
f
≤
3.0 ns.
74AHC3G14; 74AHCT3G14
APPLICATIONS
•
Wave and pulse shapers
•
Astable multivibrators
•
Monostable multivibrators.
DESCRIPTION
The 74AHC3G/AHCT3G14 is a high-speed Si-gate CMOS
device.
The 74AHC3G/AHCT3G14 provides three inverting
buffers with Schmitt-trigger action. These devices are
capable of transforming slowly changing input signals into
sharply defined, jitter-free output signals.
TYPICAL
SYMBOL
t
PHL
/t
PLH
C
I
C
PD
Notes
1. C
PD
is used to determine the dynamic power dissipation (P
D
in
µW).
P
D
= C
PD
×
V
CC2
×
f
i
×
N +
Σ(C
L
×
V
CC2
×
f
o
) where:
f
i
= input frequency in MHz;
f
o
= output frequency in MHz;
C
L
= output load capacitance in pF;
V
CC
= supply voltage in Volts;
N = number of inputs switching;
Σ(C
L
×
V
CC2
×
f
o
) = sum of the outputs.
2. The condition is V
I
= GND to V
CC
.
FUNCTION TABLE
See note 1.
INPUT
nA
L
H
Note
1. H = HIGH voltage level;
L = LOW voltage level.
2004 Oct 18
2
OUTPUT
nY
H
L
PARAMETER
propagation delay A to Y
input capacitance
power dissipation capacitance
C
L
= 15 pF; f = 1 MHz;
notes 1 and 2
CONDITIONS
AHC3G14
C
L
= 15 pF; V
CC
= 5 V
3.2
1.5
10
AHCT3G14
4.1
1.5
12
ns
pF
pF
UNIT
Philips Semiconductors
Product specification
Inverting Schmitt trigger
ORDERING INFORMATION
74AHC3G14; 74AHCT3G14
PACKAGE
TYPE NUMBER
74AHC3G14DP
74AHCT3G14DP
74AHC3G14DC
74AHCT3G14DC
74AHC3G14GM
74AHCT3G14GM
PINNING
PIN
1
2
3
4
5
6
7
8
1A
3Y
2A
GND
2Y
3A
1Y
V
CC
SYMBOL
data input
data output
data input
ground (0 V)
data output
data input
data output
supply voltage
DESCRIPTION
TEMPERATURE
RANGE
−40 °C
to +125
°C
−40 °C
to +125
°C
−40 °C
to +125
°C
−40 °C
to +125
°C
−40 °C
to +125
°C
−40 °C
to +125
°C
PINS
8
8
8
8
8
8
PACKAGE
TSSOP8
TSSOP8
VSSOP8
VSSOP8
XSON8
XSON8
MATERIAL
plastic
plastic
plastic
plastic
plastic
plastic
CODE
SOT505-2
SOT505-2
SOT765-1
SOT765-1
SOT833-1
SOT833-1
MARKING
A14
C14
A14
C14
A14
C14
3G14
1A
1
8
V
CC
1A
3Y
2A
GND
1
2
3
4
001aab833
8
7
V
CC
1Y
3A
2Y
3G14
6
5
3Y
2
7
1Y
2A
3
6
3A
GND
4
5
2Y
001aab834
Transparent top view
Fig.1 Pin configuration TSSOP8 and VSSOP8.
Fig.2 Pin configuration XSON8.
2004 Oct 18
3
Philips Semiconductors
Product specification
Inverting Schmitt trigger
RECOMMENDED OPERATING CONDITIONS
74AHC3G14; 74AHCT3G14
74AHC3G
SYMBOL
V
CC
V
I
V
O
T
amb
PARAMETER
supply voltage
input voltage
output voltage
operating ambient temperature
see DC and AC
characteristics per
device
CONDITIONS
MIN.
2.0
0
0
−40
74AHCT3G
UNIT
TYP. MAX.
5.0
−
−
+25
5.5
5.5
V
CC
V
V
V
TYP. MAX. MIN.
5.0
−
−
+25
5.5
5.5
V
CC
4.5
0
0
+125
−40
+125
°C
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134); voltages are referenced to GND (ground = 0 V).
SYMBOL
V
CC
V
I
I
IK
I
OK
I
O
I
CC
, I
GND
T
stg
P
D
Note
1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
PARAMETER
supply voltage
input voltage
input diode current
output diode current
output source or sink current
V
CC
or GND current
storage temperature
power dissipation
T
amb
=
−40 °C
to +125
°C
V
I
<
−0.5
V
V
O
<
−0.5
V or V
O
> V
CC
+ 0.5 V; note 1
−0.5
V < V
O
< V
CC
+ 0.5 V
CONDITIONS
MIN.
−0.5
−0.5
−
−
−
−
−65
−
MAX.
+7.0
+7.0
−20
±20
±25
±75
+150
250
UNIT
V
V
mA
mA
mA
mA
°C
mW
2004 Oct 18
5
Sensor
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