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ALM-11136-TR1G

Description
RF Amplifier TMA Bypass LNA Module
CategoryWireless rf/communication    Telecom circuit   
File Size356KB,12 Pages
ManufacturerBroadcom
Environmental Compliance
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ALM-11136-TR1G Overview

RF Amplifier TMA Bypass LNA Module

ALM-11136-TR1G Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerBroadcom
package instructionQCCN,
Reach Compliance Codecompliant
ECCN codeEAR99
JESD-30 codeR-PQCC-N36
length10 mm
Humidity sensitivity level2
Number of functions1
Number of terminals36
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
Package body materialPLASTIC/EPOXY
encapsulated codeQCCN
Package shapeRECTANGULAR
Package formCHIP CARRIER
Maximum seat height1.6 mm
Nominal supply voltage5 V
surface mountYES
Telecom integrated circuit typesTELECOM CIRCUIT
Temperature levelINDUSTRIAL
Terminal formNO LEAD
Terminal pitch0.845 mm
Terminal locationQUAD
width7 mm
ALM-11136
870 MHz – 915 MHz
Low Noise, High Linearity Amplifier Module
with Fail-Safe Bypass Feature
Data Sheet
Description
Avago Technologies’ ALM-11136 is an easy-to-use GaAs
MMIC Tower Mount Amplifier (TMA) LNA Module with low
IL bypass path. The module has low noise and high linearity
achieved through the use of Avago Technologies’ propri-
etary 0.25
mm
GaAs Enhancement-mode pHEMT process.
All matching components are fully integrated within the
module and the 50 ohm RF input and output pins are
already internally AC-coupled. This makes the ALM-11136
extremely easy to use as the only external parts are DC
supply bypass capacitors. For optimum performance
at other bands, ALM-11036 (776-870 MHz), ALM-11236
(1710-1850 MHz) and ALM-11336 (1850-1980) are recom-
mended. All ALM-11x36 share the same package and pin
out configuration.
Features
Very Low Noise Figure
Low Bypass IL
Good Return Loss
Fail-safe Bypass mode
High linearity performance
High isolation @LNA mode
Flat gain
GaAs E-pHEMT Technology
Single 5 V power supply
Compact MCOB package 7.0 x 10.0 x 1.5 mm
3
MSL2a
Pin Configuration and Package Marking
7.0 x 10.0 x 1.5 mm
3
36-lead MCOB
Specifications
915 MHz; 5 V, 92 mA (Typical)
15.4 dB Gain
≥ 18 dB RL
AVAGO
11136
WWYY
XXXX
0.76 dB Noise Figure
22 dBm IIP3
4.5 dBm Input Power at 1dB gain compression
Pin
Connection
RF_IN
RF_OUT
EXT_P2
EXT_P1
Vdd
GND
0.85 dB Bypass IL
≥ 18 dB Bypass RL
≥ 50 dB isolation @LNA mode
26
25
24
23
22
21
20
19
18
17
16
15
14
13
12
11
10
9
1
2
3
4
5
6
7
8
4
23
28
30
33
Others
27
28
29
30
31
32
33
34
35
36
Applications
Tower Mount Amplifier (TMA)
Cellular Infrastructure
Attention: Observe precautions for
handling electrostatic sensitive devices.
ESD Machine Model = 350 V
ESD Human Body Model = 1500 V
Refer to Avago Application Note A004R:
Electrostatic Discharge, Damage and Control.
Note:
Package marking provides orientation and identification
“11136” = Device Part Number
“WWYY” = Work week and Year of manufacture
“XXXX” = Last 4 digit of Lot number
07 Test finished product + SPI driver TFT
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