IRG4BC30UPBF datasheet, PDF - EEWORLD Datasheet

IRG4BC30UPBF: DescriptionIGBT Transistors 600V ULTRAFAST 8-60KHZ DSCRETE IGBT; CategoryDiscrete semiconductor The transistor; File Size306KB，8 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/; Environmental Compliance

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IGBT Transistors 600V ULTRAFAST 8-60KHZ DSCRETE IGBT

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Infineon
package instruction	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code	compliant
ECCN code	EAR99
Other features	ULTRA FAST SWITCHING
Shell connection	COLLECTOR
Maximum collector current (IC)	23 A
Collector-emitter maximum voltage	600 V
Configuration	SINGLE
Maximum landing time (tf)	150 ns
Gate emitter threshold voltage maximum	6 V
Gate-emitter maximum voltage	20 V
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSFM-T3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	100 W
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	POWER CONTROL
Transistor component materials	SILICON
Nominal off time (toff)	320 ns
Nominal on time (ton)	33 ns

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