2N3868S datasheet, PDF - EEWORLD Datasheet

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2N3868S: DescriptionBipolar Transistors - BJT Power BJT; CategoryDiscrete semiconductor The transistor; File Size112KB，4 Pages; ManufacturerMicrosemi; Websitehttps://www.microsemi.com

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2N3868S Overview

Bipolar Transistors - BJT Power BJT

2N3868S Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	Microsemi
Parts packaging code	BCY
package instruction	TO-39, 3 PIN
Contacts	2
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum collector current (IC)	3 A
Collector-emitter maximum voltage	60 V
Configuration	SINGLE
Minimum DC current gain (hFE)	20
JEDEC-95 code	TO-205AD
JESD-30 code	O-MBCY-W3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Maximum operating temperature	200 °C
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	PNP
Maximum power dissipation(Abs)	10 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	TIN LEAD
Terminal form	WIRE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Maximum off time (toff)	600 ns
Maximum opening time (tons)	100 ns
Base Number Matches	1

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TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803

Website: http: //www.microsemi.com

Gort Road Business Park, Ennis, Co. Clare, Ireland

Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298

PNP SILICON LOW POWER TRANSISTOR

Qualified per MIL-PRF-19500/350

DEVICES

LEVELS

2N3867

2N3868

2N3867S

2N3868S

JAN

JANTX

JANTXV

JANS

ABSOLUTE MAXIMUM RATINGS

= +25°C unless otherwise noted)

Parameters / Test Conditions

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Total Power Dissipation

@ T

= +25°C

(1)

Operating & Storage Junction Temperature Range

THERMAL CHARACTERISTICS

Parameters / Test Conditions

Thermal Resistance, Junction-to-Ambient

Symbol

θJA

Max.

175

Unit

°C/mW

Symbol 2N3867

CBO

CEO

EBO

, T

stg

4.0

3.0

1.0

-65 to +200

2N3868

Unit

Vdc

mAdc

W/°C

°C

TO-5 *

2N3867, 2N3868

Note: *

Electrical characteristics for “S” suffix devices are identical to the “non S”

corresponding devices.

1/ Derate linearly 5.71mW/°C for T

> +25°C

2/ Derate linearly 57.1mW/°C for T

> +25°C

ELECTRICAL CHARACTERISTICS

= +25°C, unless otherwise noted)

Parameters / Test Conditions

OFF CHARACTERTICS

Collector-Emitter Breakdown Current

2N3867, S

= 10μAdc

2N3868, S

Collector-Base Cutoff Current

= 40Vdc

2N3867, S

= 60Vdc

2N3868, S

Emitter-Base Cutoff Current

= 4.0Vdc

Collector-Emitter Cutoff Current

= 40Vdc

2N3867, S

= 60Vdc

2N3868, S

2N3867, S

= 40Vdc, T

= +150°C

2N3868, S

= 60Vdc, T

= +150°C

T4-LDS-0170 Rev. 1 (101121)

Symbol

Min.

Max.

Unit

(BR)CEO

CBO

EBO

100

1.0

Vdc

µAdc

TO-39 * (TP-205AD)

2N3867S, 2N3868S

CEX

µAdc

Page 1 of 4

2N3868S Related Products

	2N3868S	BLU1206P-1202-CB10	2N3867S	Jan2N3868	Jantx2N3868S	Jantx2N3868	GUS-TS0A-01-2341-BG
Description	Bipolar Transistors - BJT Power BJT	Res,SMT,Thin Film,12K Ohms,150WV,.25% +/-Tol,10ppm TC,1206 Case	Small Signal Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-205AD, TO-39, 3 PIN	Small Signal Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-205AD, TO-39, 3 PIN	Bipolar Transistors - BJT Power BJT	Small Signal Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-5, TO-5, 3 PIN	Array/Network Resistor, Isolated, Tantalum Nitride/nickel Chrome, 0.1W, 2340ohm, 100V, 0.1% +/-Tol, -100,100ppm/Cel, 2617,
Reach Compliance Code	unknown	compliant	unknown	unknown	compliant	not_compliant	compliant
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Number of terminals	3	2	3	3	3	3	20
Maximum operating temperature	200 °C	155 °C	200 °C	200 °C	200 °C	200 °C	125 °C
Package form	CYLINDRICAL	SMT	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	SMT
Is it lead-free?	Contains lead	-	Contains lead	Contains lead	Contains lead	Contains lead	-
Is it Rohs certified?	incompatible	-	incompatible	incompatible	incompatible	incompatible	incompatible
Parts packaging code	BCY	-	BCY	BCY	BCY	-	-
package instruction	TO-39, 3 PIN	-	TO-39, 3 PIN	TO-39, 3 PIN	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3	-
Contacts	2	-	2	2	2	-	-
Maximum collector current (IC)	3 A	-	3 A	3 A	3 A	3 A	-
Collector-emitter maximum voltage	60 V	-	40 V	60 V	60 V	60 V	-
Configuration	SINGLE	-	SINGLE	SINGLE	SINGLE	SINGLE	-
Minimum DC current gain (hFE)	20	-	20	20	20	20	-
JEDEC-95 code	TO-205AD	-	TO-205AD	TO-205AD	TO-205AD	TO-5	-
JESD-30 code	O-MBCY-W3	-	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3	-
JESD-609 code	e0	-	e0	e0	e0	e0	e0
Number of components	1	-	1	1	1	1	-
Package body material	METAL	-	METAL	METAL	METAL	METAL	-
Package shape	ROUND	-	ROUND	ROUND	ROUND	ROUND	-
Polarity/channel type	PNP	-	PNP	PNP	PNP	PNP	-
Certification status	Not Qualified	-	Not Qualified	Qualified	Qualified	Qualified	-
surface mount	NO	-	NO	NO	NO	NO	-
Terminal surface	TIN LEAD	-	TIN LEAD	TIN LEAD	Tin/Lead (Sn/Pb)	TIN LEAD	Tin/Lead (Sn/Pb)
Terminal form	WIRE	-	WIRE	WIRE	WIRE	WIRE	-
Terminal location	BOTTOM	-	BOTTOM	BOTTOM	BOTTOM	BOTTOM	-
transistor applications	SWITCHING	-	SWITCHING	SWITCHING	SWITCHING	SWITCHING	-
Transistor component materials	SILICON	-	SILICON	SILICON	SILICON	SILICON	-
Maximum off time (toff)	600 ns	-	600 ns	600 ns	600 ns	600 ns	-
Maximum opening time (tons)	100 ns	-	100 ns	100 ns	100 ns	100 ns	-
Objectid	-	850361317	1439170639	1439170672	-	1439170708	801236422

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